首页 |元器件品牌

MBRF10150CT [TSC]

Isolation 10.0 AMPS. Schottky Barrier Rectifiers; 隔离10.0安培。肖特基势垒整流器
MBRF10150CT
型号： MBRF10150CT
厂家： TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述：

Isolation 10.0 AMPS. Schottky Barrier Rectifiers
隔离10.0安培。肖特基势垒整流器

二极管 瞄准线 功效 局域网
文件： 总2页 (文件大小：116K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
MBRF1030CT THRU MBRF10200CT  
Isolation 10.0 AMPS. Schottky Barrier Rectifiers  
Voltage Range  
30 to 200 Volts  
Current  
10.0 Amperes  
ITO-220AB  
Features  
ꢀ
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
ꢀ
ꢀ
High temperature soldering guaranteed:  
260oC/10 seconds,0.25”(6.35mm )from case  
Mechanical Data  
ꢀ
Cases: ITO-220AB molded plastic  
Terminals: Leads solderable per M IL-STD-750, Method  
2026  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Polarity: As marked  
Mounting position: Any  
Mounting torque: 5 in. - lbs. max  
W eight: 0.08 ounce, 2.24 grams  
PIN 1  
PIN 3  
PIN 2  
Dim ensions in inches and (m illim eters)  
Maxim um Ratings and Electrical Characteristics  
Rating at 25℃ ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF  
1030 1035 1040 1045 1050 1060 10100 10150 10200  
Sym bol  
Units  
Type Num ber  
CT  
30  
21  
30  
CT  
35  
24  
35  
CT  
40  
28  
40  
CT  
45  
31  
45  
CT  
50  
35  
50  
CT  
60  
42  
60  
CT  
100 150 200  
70 105 140  
CT  
CT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
at TC=133oC  
100 150 200  
10  
A
A
I(AV)  
IFRM  
IFSM  
IRRM  
Peak Repetitive Forward Current (Rated VR  
,
Square W ave, 20KHz) at Tc=133oC  
10.0  
Peak Forward Surge Current, 8.3 m s Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
Peak Repetitive Reverse Surge Current  
(Note 1)  
150  
0.5  
A
A
Maximum Instantaneous Forward Voltage at  
(Note 2)  
I = 5A, Tc=25O  
C
0.70  
0.57  
0.80  
0.65  
0.85 0.88 0.99  
0.75 0.78 0.87  
0.95  
F
I
I
I
= 5A, Tc=125O  
C
F
F
F
V
=10A, Tc=25O  
=10A, Tc=125O  
C
VF  
C
0.85  
Maximum Instantaneous Reverse Current  
at Rated DC Blocking Voltage @ Tc=25℃  
@ Tc=125℃  
mA  
mA  
IR  
0.1  
15  
0.15  
150  
Voltage Rate of Change, (Rated VR  
)
10,000  
V/uS  
dV/dt  
RMS Isolation Voltage (t=1.0 second, R.H.  
≦ 30% , TA=25℃ )  
(Note 4)  
(Note 5)  
(Note 6)  
4500  
3500  
1500  
V
VISO  
Typical Thermal Resistance Per Leg (Note3)  
Operating Junction Temperature Range  
Storage Temperature Range  
Rθ JC  
TJ  
3.5  
℃ /W  
℃
-65 to +150  
-65 to +150  
TSTG  
℃
Notes: 1. 2.0us Pulse W idth, f=1.0 KHz  
2. Pulse Test: 300us Pulse W idth, 1% Duty Cycle  
3. Thermal Resistance from Junction to Case Per Leg.  
4. Clip Mounting (on case), where lead does not overlap heatsink with 0.110” offset.  
5. Clip mounting (on case), where leads do overlap heatsink.  
6. Screw mounting with 4-40 screw, where washer diameter is ? 4.9 mm (0.19”)  
- 132 -  
RATINGS AND CHARACTERISTIC CURVES (MBRF1030CT THRU MBRF10200CT)  
FIG.2- MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
FIG.1- FORWARD CURRENT DERATING CURVE  
180  
150  
120  
90  
6
5
RESISTIVE OR  
INDUCTIVE LOAD  
Tj=Tj max.  
8.3ms Single Half Sine-Wave  
JEDEC Method  
4
3
60  
2
1
0
30  
0
0.1  
1
10  
100  
0
50  
100  
150  
CASE TEMPERATURE. (oC)  
NUMBER OF CYCLES AT 60Hz  
FIG.4- TYPICAL REVERSE CHARACTERISTICS  
FIG.3- TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
50  
40  
10  
MBRF1050CT-MBRF1060CT  
10  
Tj=1250C  
MBRF1030CT-MBRF1045CT  
MBRF10100CT  
1
1
Tj=750C  
0.1  
MBRF10150CT  
0.1  
0.01  
MBRF10200CT  
Tj=250C  
Tj=250C  
100  
Pulse Width=300  
1% Duty Cycle  
s
0.001  
0.01  
0
20  
40  
60  
80  
120  
140  
1.2  
0.7 0.8 0.9 1.0 1.1  
0
0.1 0.2 0.3 0.4 0.5  
0.6  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
FORWARD VOLTAGE. (V)  
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS  
PER LEG  
100  
FIG.5- TYPICAL JUNCTION CAPACITANCE  
5,000  
Tj=250C  
f=1.0MHz  
Vsig=50mVp-p  
10  
1,000  
500  
1
0.1  
100  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
REVERSE VOLTAGE. (V)  
T, PULSE DURATION. (sec)  
- 133 -  

相关型号：

MBRF10150CT-G

 Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, Silicon, TO-220AB, GREEN, PLASTIC, ITO-220AB, 3 PIN
SENSITRON

MBRF10150CT-LJ

 Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 150V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
DIODES

MBRF10150CT-Y

 Dual Common Cathode Schottky Rectifier
TSC

MBRF10150CTL

 Rectifier Diode, Schottky, 1 Phase, 2 Element, 150V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
LITTELFUSE

MBRF10150CTR

 10 Ampere Insulated Dual Common Anode Schottky Half Bridge Rectifiers
THINKISEMI

MBRF10150CT_08

 SCHOTTKY BARRIER TYPE DIODE
KEC

MBRF10150D

 10.0AMPS Isolated Schottky Barrier Rectifier
TSC

MBRF1020

 10 Amp Schottky Barrier Rectifier 20 to 100 Volts
MCC

MBRF1020

 SCHOTTKY BARRIER RECTIFIER
DIOTECH

MBRF10200

 10.0 AMPS. Isolated Schottky Barrier Rectifiers
TSC

MBRF10200

 Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 10 A
DACHANG

MBRF10200CT

 Isolation 10.0 AMPS. Schottky Barrier Rectifiers
TSC
©2020 ICPDF网 联系我们和版权申明