MBR10L100CT [TSC]
10.0AMPS Low VF Schottky Barrier Rectifiers; 10.0AMPS低VF肖特基整流器
| 型号： | MBR10L100CT |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 10.0AMPS Low VF Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MBR10L100CT
10.0AMPS Low VF Schottky Barrier Rectifiers
TO-220AB
RoHS
Pb
COMPLIANCE
Features
UL Recognized File # E-326243
Low power loss, high efficiency
High current capability, low forward voltage drop
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
High surge current capability
Qualified as per AEC-Q101
Guard-ring for overvoltage protection
For use in low voltage - high frequency inventor,
free wheeling, and polarity protection application
High temperature soldering guaranteed:
260℃/10 seconds/.375", (9.5mm) lead lengths
at 5 lbs.,(2.3kg) tension
Dimensions in inches and (millimeters)
Marking Diagram
Mechanical Data
Case: TO-220AB
MBR10LXXCT = Specific Device Code
Terminals: Pure tin plated leads, solderable
per MIL-STD-202, Method 208 guaranteed
G
= Green Compound
= Year
Polarity: As marked
Y
Weight: 1.88 grams
WW
= Work Week
Mounting torque: 5 in- lbs, max
Mounting position:Any
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR10L100CT
Symbol
Unit
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
100
70
V
V
V
A
Maximum DC Blocking Voltage
100
10
Maximum Average Forward Rectified Current
IF(AV)
Peak Repetitive Forward Current (Rated VR, Square
Wave, 20KHz)
IFRM
10
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load
IFSM
IRRM
120
1
A
A
Peak Repetitive Reverse Surge Current (Note 1)
TYP
0.73
0.59
0.82
0.66
TYP
0.30
0.50
MAX
0.76
0.65
0.85
0.71
MAX
20
Maximum Instantaneous Forward Voltage (Note 2)
IF=5A, TA=25℃
IF=5A, TA=125℃
VF
V
IF=10A, TA=25℃
IF=10A, TA=125℃
Maximum DV Reverse Current @ Rated VR
T =25 ℃
A
IR
uA
mA
V/us
pF
OC/W
OC
T =125 ℃
A
15
Voltage Rate of Change,(Rated VR)
10000
185
dV/dt
Cj
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance (Note 4)
Operating Temperature Range
RθjC
TJ
2.8
- 55 to + 150
- 55 to + 150
OC
Storage Temperature Range
TSTG
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Note 3: Measure at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Note 4: Heatsink Size (4" x 6" x 0.25") Al-Plate
Version:C11
RATINGS AND CHARACTERISTIC CURVES (MBR10L100CT)
FIG.1 FORWARD CURRENT DERATING CURVE
FIG. 2 MAXIMUM FORWARD SURGE
12
10
8
CURRENT
175
150
125
100
75
8.3mS Single Half Sine Wave
JEDEC Method
6
4
RESISTIVE OR
INDUCTIVELOA
2
50
25
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
0
1
10
100
CASE TEMPERATURE (oC)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 TYPICAL FORWARD CHARACTERISRICS
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
10000
100
1000
100
10
10
TA=125℃
TA=125℃
1
1
0.1
0.01
TA=25℃
TA=25℃
0.1
10
20
30
40
50
60
70
80
90
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
100
10
1000
100
10
1
0.1
0.1
1
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
T-PULSE DURATION(s)
Version:C11
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