ES1FL [TSC]

1.0 AMP. Surface Mount Super Fast Rectifiers; 1.0 AMP 。表面贴装超快速整流器
ES1FL
型号: ES1FL
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

1.0 AMP. Surface Mount Super Fast Rectifiers
1.0 AMP 。表面贴装超快速整流器

文件: 总2页 (文件大小:215K)
中文:  中文翻译
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ES1AL - ES1JL  
1.0 AMP. Surface Mount Super Fast Rectifiers  
Sub SMA  
Features  
For surface mounted application  
Low profile package  
Low power loss, high efficiency,  
Ideal for automated placement  
Glass passivated chip junction  
High temperature soldering:  
O
260 C/10 seconds at terminals  
Mechanical Data  
Cases: Sub SMA plastic case  
Terminal : Pure tin plated, lead free.  
Polarity: Color band cathode end  
Packing: 12mm tape per EIA STD RS-481  
Weight: approx. 15mg  
Dimensions in inches and (millimeters)  
Marking: As below table  
Maximum Ratings and Electrical Characteristics  
O
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol ES ES ES ES ES  
ES  
ES  
ES Units  
Type Number  
1AL 1BL 1CL 1DL 1FL 1GL 1HL 1JL  
50 100 150 200 300 400 500 600  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
VRRM  
VRMS  
VDC  
35  
70 105 140 210 280 350 420  
Maximum DC Blocking Voltage  
Marking Code  
50 100 150 200 300 400 500 600  
EALYM EBLYM ECLYM EDLYM EFLYM EGLYM EHLYM EJLYM  
1.0  
Maximum Average Forward Rectified Current  
See Fig. 1  
A
A
I(AV)  
IFSM  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
30  
Maximum Instantaneous Forward Voltage  
@ 1.0A  
0.95  
1.3  
1.7  
V
VF  
IR  
o
Maximum DC Reverse Current @ TA =25 C  
o
5.0  
100  
35  
uA  
uA  
nS  
at Rated DC Blocking Voltage @ TA=100 C  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Maximum Thermal Resistance (Note 3)  
Trr  
Cj  
10  
8
pF  
o
85  
35  
C/W  
R
θJA  
R
θJL  
o
Operating Temperature Range  
Storage Temperature Range  
TJ  
-55 to +150  
-55 to +150  
C
o
TSTG  
C
Notes:  
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Area.  
Version: A06  
RATINGS AND CHARACTERISTIC CURVES (ES1AL THRU ES1JL)  
FIG.1- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
FIG.2- TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
50  
1.2  
1.0  
0.8  
0.6  
0.4  
Tj=250C  
PULSE WIDTH-300  
1% DUTY CYCLE  
S
10  
RESISTIVE OR  
INDUCTIVE LOAD  
0.2X0.2"(5.0X5.0mm)  
COPPER PAD AREAS  
1
0.2  
0
80  
90  
100  
110  
120  
130  
140  
150  
0.1  
LEAD TEMPERATURE. (oC)  
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
30  
25  
20  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
8.3ms Single Half Sine Wave  
(JEDEC Method) at TL=120oC  
FORWARD VOLTAGE. (V)  
15  
10  
FIG.5- TYPICAL REVERSE CHARACTERISTICS  
1000  
5.0  
100  
10  
1
100  
NUMBER OF CYCLES AT 60Hz  
Tj=1250C  
FIG.4- TYPICAL JUNCTION CAPACITANCE  
14  
12  
10  
8.0  
10  
Tj=850C  
Tj=250C  
f=1.0MHz  
Vsig=50mVp-p  
1
Tj=250C  
6.0  
4.0  
0.1  
2.0  
0
0.01  
1
100  
0
10  
0
20  
40  
60  
80  
100  
120  
140  
REVERSE VOLTAGE. (V)  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
50W  
NONINDUCTIVE  
10W  
NONINDUCTIVE  
trr  
+0.5A  
(-)  
DUT  
(+)  
PULSE  
GENERATOR  
(NOTE 2)  
0
50Vdc  
(approx)  
(-)  
-0.25A  
1W  
OSCILLOSCOPE  
(NOTE 1)  
(+)  
NON  
INDUCTIVE  
-1.0A  
NOTES: 1. Rise Time=7ns max. Input Impedance=  
1 megohm 22pf  
1cm  
SET TIME BASE FOR  
5/ 10ns/ cm  
2. Rise Time=10ns max. Sourse Impedance=  
50 ohms  
Version: A06  

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