ES1D [TSC]
1.0 AMP. Super Fast Surface Mount Rectifiers; 1.0 AMP 。超快表面贴装整流器
| 型号： | ES1D |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0 AMP. Super Fast Surface Mount Rectifiers |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES1A THRU ES1J
1.0 AMP. Super Fast Surface Mount Rectifiers
Voltage Range
50 to 600 Volts
Current
1.0 Ampere
SMA/DO-214AC
Features
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Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief,
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
260OC/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
.062(1.58)
.050(1.27)
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
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.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
Mechanical Data
.008(.20)
.004(.10)
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Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 12mm tape per E1A STD RS-481
.056(1.41)
.035(0.90)
.210(5.33)
.195(4.95)
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Weight: 0.064 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol ES ES ES ES ES ES ES ES
Type Number
Units
1A 1B 1C 1D 1F 1G 1H 1J
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50 100 150 200 300 400 500 600
V
V
V
VRRM
VRMS
VDC
35 70 105 140 210 280 350 420
50 100 150 200 300 400 500 600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
1.0
30
A
A
I(AV)
IFSM
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ TA =25℃
0.95
10
1.3
1.7
V
VF
IR
5.0
100
35
uA
uA
nS
pF
℃/W
at Rated DC Blocking Voltage @ TA=100℃
Maximum Reverse Recovery Time ( Note 1 )
Trr
Cj
RθJA
RθJL
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
8
85
35
Operating Temperature Range
Storage Temperature Range
TJ
-55 to +150
℃
℃
TSTG
-55 to + 150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2”(5 x 5mm) Copper Pad Area.
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RATINGS AND CHARACTERISTIC CURVES (ES1A THRU ES1J)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
1.2
1.0
0.8
0.6
0.4
30
25
20
8.3ms Single Half Sine Wave
(JEDEC Method) at TL=120oC
RESISTIVE OR
INDUCTIVE LOAD
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
15
10
5.0
0.2
0
100
10
NUMBER OF CYCLES AT 60Hz
80
90
100
110
120
130
140
150
1
LEAD TEMPERATURE. (oC)
FIG.3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
50
10
Tj=250C
PULSE WIDTH-300
1% DUTY CYCLE
S
100
Tj=1250C
10
Tj=850C
1
1
0.1
Tj=250C
0.1
0.01
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
14
12
10
8.0
Tj=250C
f=1.0MHz
Vsig=50mVp-p
6.0
4.0
2.0
0
1
100
0
10
REVERSE VOLTAGE. (V)
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