BC846ARF [TSC]
250mW, NPN Small Signal Transistor; 为250mW ， NPN小信号晶体管
| 型号： | BC846ARF |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 250mW, NPN Small Signal Transistor |
| 文件： | 总3页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846A/B, BC847A/B/C, BC848A/B/C
250mW, NPN Small Signal Transistor
Small Signal Transistor
SOT-23
3 Collector
A
F
2 Emitter
1 Base
B
E
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
C
D
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Unit (inch)
Dimensions
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
Min
Max
Mechanical Data
Case : SOT- 23 small outline plastic package
A
B
C
D
E
F
3.00 0.110 0.118
1.40 0.047 0.055
0.50 0.012 0.020
2.00 0.071 0.079
2.55 0.089 0.100
1.20 0.035 0.043
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Ordering Information
Suggested PAD Layout
Part No.
BC846A RF
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Packing
Marking
1A
0.95
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
0.037
BC846B RF
BC847A RF
BC847B RF
BC847C RF
BC848A RF
BC848B RF
BC848C RF
BC846A RFG
BC846B RFG
BC847A RFG
BC847B RFG
BC847C RFG
BC848A RFG
BC848B RFG
BC848C RFG
1B
1E
1F
2.0
0.079
1G
1J
0.9
0.035
1K
0.8
1L
0.031
1A
1B
1E
1F
1G
1J
1K
1L
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Units
Power Dissipation
PD
250
80
50
30
65
45
30
6
mW
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
VCEO
VEBO
6
5
Collector Current
IC
0.1
A
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : E11
BC846A/B, BC847A/B/C, BC848A/B/C
250mW, NPN Small Signal Transistor
Small Signal Transistor
Electrical Characteristics
Type Number
Symbol
Min
Max
Units
80
50
30
65
45
30
6
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
V(BR)CBO
IC= 10μA
IE= 0
-
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
V(BR)CEO
IC= 10mA IB= 0
-
-
V
V
V(BR)EBO
IE= 1μA
IC= 0
6
5
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
V
V
CB= 30V IE= 0
-
15
nA
EB= 5V
IC=0
-
0.1
μA
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
110
200
420
220
450
800
hFE
DC current gain
VCE= 5V
IC= 2mA
VCE(sat)
VBE(sat)
fT
IC= 100mA IB= 5mA
IC= 100mA IB= 5mA
-
-
0.5
1.1
-
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
V
V
V
CE= 5V
IC= 10mA
100
f= 100MHz
MHz
Tape & Reel specification
Item
Symbol Dimension(mm)
A
B
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
Carrier width
TSC label
Carrier length
C
Carrier depth
Top Cover Tape
d
Sprocket hole
D
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
D1
D2
E
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
Carieer Tape
F
Any Additional Label (If Required)
P0
P1
T
W
W1
P0
d
Reel width
P1
T
E
A
F
W
C
B
W1
Direction of Feed
D
D2
D1
Version : E11
BC846A/B, BC847A/B/C, BC848A/B/C
250mW, NPN Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
Figure 2. DC Current Gain
Figure1. Static Characteristic
MGT723
100
400
handbook, halfpage
IB = 400µA
h
FE
IB = 350µA
80
(1)
IB = 300µA
300
IB = 250µA
60
IB = 200µA
(2)
(3)
200
100
0
IB = 150µA
40
IB = 100µA
20
IB = 50µA
0
0
4
8
12
16
20
−1
10
2
3
10
1
10
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
I
(mA)
C
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
100
10
1
MGT724
1200
handbook, halfpage
V
BE
VCE = 2V
(mV)
1000
(1)
800
(2)
600
(3)
400
200
0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−1
10
2
3
10
1
10
10
VBE[V], BASE-EMITTER VOLTAGE
I
(mA)
C
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3)
Tamb = 150 °C.
Figure 6. Current Gain Bandwidth Product
1000
Figure 5. Collector Output Capacitance
100
f=1MHz
VCE=5V
10
100
1
10
0.1
1
0.1
1
10
100
1000
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Version : E11
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