BAV20W [TSC]

410 mW High Voltage SMD Switching Diode; 410 mW的高电压SMD开关二极管
BAV20W
型号: BAV20W
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

410 mW High Voltage SMD Switching Diode
410 mW的高电压SMD开关二极管

二极管 开关 光电二极管
文件: 总1页 (文件大小:91K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAV19W/BAV20W/BAV21W  
410 mW High Voltage SMD Switching Diode  
Small Signal Diode  
SOD-123F  
B
C
A
Features  
—These diodes are also available in DO-35,LL34 Package  
—Surface device type mounting  
—Moisture sensitivity level 1  
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
E
F
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Unit (mm)  
Unit (inch)  
Dimensions  
Min  
1.5  
Max  
Min  
Max  
Mechanical Data  
—Case : Flat lead SOD-323 small outline plastic package  
A
B
C
D
E
F
1.7 0.059 0.067  
3.7 0.130 0.146  
0.7 0.020 0.028  
2.7 0.098 0.106  
3.3  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
0.5  
—High temperature soldering guaranteed: 260°C/10s  
—Polarity : Indicated by cathode band  
—Weight : 4.85±0.5 mg  
2.5  
0.8  
1.0  
0.031 0.039  
0.05  
0.2 0.002 0.008  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
PD  
Value  
Units  
mW  
V
Power Dissipation  
410  
250  
625  
200  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Mean Forward Current  
VRRM  
IFRM  
mA  
mA  
IO  
Non-Repetitive Peak Forward Surge Current  
IFSM  
1.0  
A
Pulse Width=  
1 μsec  
Thermal Resistance (Junction to Ambient) (Note 1)  
Junction and Storage Temperature Range  
RθJA  
375  
°C/W  
°C  
TJ, TSTG  
-65 to + 150  
Electrical Characteristics  
Type Number  
Symbol  
Min  
Max  
Units  
120  
200  
250  
-
-
-
BAV19W  
Reverse Breakdown Voltage  
Forward Voltage  
V(BR)  
V
BAV20W  
BAV21W  
IF=  
(Note 2)  
-
1.00  
1.25  
100mA  
200mA  
VF  
IR  
V
-
IF=  
BAV19W  
BAV20W  
BAV21W  
Reverse Leakage Current  
-
100  
nA  
(Note 3)  
CJ  
5.0  
50  
pF  
ns  
Junction Capacitance  
VR=0, f=1.0MHz  
(Note4)  
Trr  
Reverse Recovery Time  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Notes:2. Test Condition : IR=100μA  
Notes:3. Test Condition : BAV19W @ VR=100V, BAV20W @ VR=150V, BAV21W @ VR=200V  
Notes:4. Test Condition : IF=IR=30mA, RL=100, IRR=3mA  
Version : C09  

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