BAS21S [TSC]

225mW SMD Switching Diode; 为225mW SMD开关二极管
BAS21S
型号: BAS21S
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

225mW SMD Switching Diode
为225mW SMD开关二极管

二极管 开关 光电二极管
文件: 总2页 (文件大小:75K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS21 / A / C / S  
225mW SMD Switching Diode  
Small Signal Diode  
SOT-23  
F
A
Features  
—Fast switching speed  
B
E
—Surface device type mounting  
—Moisture sensitivity level 1  
C
G
D
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Unit (mm)  
Unit (inch)  
Min Max  
Dimensions  
Min  
2.80  
1.20  
0.30  
1.80  
2.25  
0.90  
Max  
Mechanical Data  
—Case :SOT-23 small outline plastic package  
A
B
C
D
E
F
3.00 0.110 0.118  
1.40 0.047 0.055  
0.50 0.012 0.020  
2.00 0.071 0.079  
2.55 0.089 0.100  
1.20 0.035 0.043  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Weight : 0.008gram (approximately)  
G
0.550 REF  
0.022 REF  
BAS21  
BAS21S  
BAS21C  
BAS21A  
Ordering Information  
Part No.  
Packing  
Package  
SOT-23  
BAS21/A/C/S RF  
3Kpcs/ 7" Reel  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
PD  
Value  
Units  
mW  
V
Power Dissipation  
225  
250  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Mean Forward Current  
VRRM  
IFRM  
625  
mA  
mA  
A
IO  
200  
Non-Repetitive Peak Forward Surge Current (Note 1)  
Thermal Resistance (Junction to Ambient) (Note 2)  
Junction and Storage Temperature Range  
IFSM  
1
RθJA  
TJ, TSTG  
500  
°C/W  
°C  
-55 to + 150  
Electrical Characteristics  
Type Number  
Symbol  
Min  
Max  
-
Units  
V
Reverse Breakdown Voltage  
IR=  
V(BR)  
250  
100μA  
100mA  
200mA  
200V  
IF=  
-
-
-
-
-
1.00  
1.25  
100  
5
V
Forward Voltage  
VF  
IF=  
V
VR=  
VR=1V,  
IR  
μA  
pF  
ns  
Reverse Leakage Current  
Junction Capacitance  
f=1.0MHz  
CJ  
Trr  
Reverse Recovery Time IF=IR=10mA, RL=100, IRR=1mA  
50.0  
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Pulse Width=1 μsec  
Notes:2. Valid provided that electrodes are kept at ambient temperature  
Version : B09  
BAS21 / A / C / S  
225mW SMD Switching Diode  
Small Signal Diode  
Rating and Sharacteristic Curves  
FIG 2 Reverse Current vs Reverse Voltage  
FIG 1 Typical Forward Characteristics  
1000  
100  
10  
100  
Ta=25°C  
Ta=25°C  
10  
1
1
0.1  
0.01  
0.1  
0.01  
100  
120  
140  
160  
180  
0
0.3  
0.6  
0.9  
1.2  
1.5  
1.8  
2.1  
Instantaneous Forward Voltage (V)  
Ambient Temperature (°C)  
FIG 3 Admissible Power Dissipation Curve  
250  
200  
150  
100  
50  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
Ambient Temperature (°C)  
Version : C09  

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