1SMB5929 [TSC]
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES; 玻璃钝化结硅稳压二极管
| 型号： | 1SMB5929 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | GLASS PASSIVATED JUNCTION SILICON ZENER DIODES |
| 文件： | 总4页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
1SMB5926~1SMB5939
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
Unit: inch (mm)
SMB/DO-214AA
1.5 Watts
VOLTAGE
FEATURES
POWER
11 to 39 Volts
• Low profile package
• Built-in strain relief
• Low inductance
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
.185(4.70)
.160(4.06)
Pb free: 99% Sn above can meet Rohs environment substance
directive request
.012(.305)
.006(.152)
MECHANICALDATA
Case: JEDEC DO-214AA, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-202G, Method 208
.050(1.27)
.030(0.76)
.008(.203)
.002(.051)
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.003 ounce, 0.093 gram
.220(5.59)
.200(5.08)
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Param eter
Sym bol
Value
Units
W atts
O C
D C PowerD issipation on TA
=75 O C ,M easure atZero Lead Length
1.5
P
D
D erate above 75O C (NO TE 1)
O perating Junction and StorageTem perature Range
-55 to +150
TJ ,TSTG
NOTES:
1.Mounted on 5.0mm2 (.013mm thick) land areas.
STAD-NOV.05.2004
PAGE . 1
Maximum
Leakage
Current
IR @VR
Maximum Zener
Impedance
VZ @ IZT
Part Number
Marking Code
Package
ZZT @ IZT
ZZK @ IZK
mA
Nom. V Min. V Max. V
O
mA
O
uA
V
1.5 Watt ZENER DIODES
926B
1SMB5926
1SMB5927
1SMB5928
1SMB5929
1SMB5930
1SMB5931
1SMB5932
1SMB5933
1SMB5934
1SMB5935
1SMB5936
1SMB5937
1SMB5938
1SMB5939
11.0
12.0
13.0
15.0
16.0
18.0
20.0
22.0
24.0
27.0
30.0
33.0
36.0
39.0
10.5 11.6
11.4 12.6
12.4 13.7
14.3 15.8
5.5
6.5
7.0
9.0
34.1
31.2
28.8
25.0
550 0.25
550 0.25
550 0.25
600 0.25
600 0.25
650 0.25
650 0.25
650 0.25
700 0.25
700 0.25
750 0.25
800 0.25
850 0.25
900 0.25
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
8.4
9.1
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
927B
928B
929B
930B
931B
932B
933B
934B
935B
936B
937B
938B
939B
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
15.2 16.8 10.0 23.4
17.1 18.9 12.0 20.8
19.0
21.0 14.0 18.7
20.9 23.1 17.5 17.0
22.8 25.2 19.0 15.6
25.7 28.4 23.0 13.9
28.5 31.5 26.0 12.5
31.4 34.7 33.0 11.4
34.2 37.8 38.0 10.4
37.1 41.0 45.0
9.6
STAD-NOV.05.2004
PAGE . 2
10
8
2.5
2
V
@I
ZT
Z
6
4
2
0
1.5
1
0.5
0
-2
-4
2
4
6
8
10
12
0
20
40 60
80 100 120 140 150 180
LEAD TEMPERATURE, O
C
V , ZENER VOLTAGE (VOLTS)
Z
Fig.1 Steady State Power Derating
Fig.2 Temperature coeeficient v.s. zener voltage,Vz(V)
1K
200
T
= 25OC
(rms) =0.1 I (dc)
Z
500
J
I
Z
V
@I
ZT
Z
200
100
50
100
70
50
30
20
10
5
22V
12V
20
2
1
6.8V
10
20
50
10
30
0.5
1
2
5
10 20 50 100 200 500
Vz, ZENER VOLTAGE (VOLTS)
Iz, ZENER TEST CURRENT (mA)
Fig.4 Zener impedance v.s. zener current
Fig.3 Temperature coeeficient v.s. zener voltage,Vz(V)
1K
RECTANGULAR
NONREPETITIVE
WAVEFORM
200
I
(dc)=1mA
500
Z
T
=25OC PRIOR
100
J
TO INTIAL PULSE
300
200
70
50
30
20
100
50
10mA
10
7
5
30
20
I
(rms)=0.1I (dc)
Z
20mA
3
2
Z
5
7
10
20 30
40 50 60 70
100
10
0.1 0.20.3 0.5
1
2 3
5
10 2030 50 100
Vz, ZENER VOLTAGE (VOLTS)
PW, PULSE WIDTH (ms)
Fig.6 Maximum Surge Power
Fig.5 Zener impedance v.s. zener voltage
STAD-NOV.05.2004
PAGE . 3
100
100
50
50
30
20
30
20
10
10
5
5
3
2
3
2
1
1
0.5
0.5
0.3
0.2
0.3
0.2
0.1
0 1
.
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
Vz, ZENER VOLTAGE (VOLTS)
Fig.7 Vz = 6.8 thru 10 Volts
Vz, ZENER VOLTAGE (VOLTS)
Fig.8 Vz = 12 thru 82 Volts
NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT
Nominal zener voltage is measured with the device function in thermal equilibrium with ambient
temperature at 25OC
NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION
Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied.
The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz
STAD-NOV.05.2004
PAGE . 4
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