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1N4148WS-RRG

更新时间：2024-09-18 12:51:53

品牌：TSC

描述：200mW High Speed SMD Switching Diode

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1N4148WS-RRG 概述

200mW High Speed SMD Switching Diode 200mW的高速贴片开关二极管

1N4148WS-RRG 数据手册

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1N4148WS/1N4448WS/1N914BWS

200mW High Speed SMD Switching Diode

Small Signal Diode

SOD-323

Features

Fast switching device(T^rr<4.0nS)

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Mechanical Data

Case : Flat lead SOD-323F small outline plastic package

Dimensions

Min

Max

Min

Max

1.15 1.35 0.045 0.053

2.30 2.70 0.091 0.106

0.25 0.40 0.010 0.016

1.60 1.80 0.063 0.071

0.80 1.00 0.031 0.039

0.05 0.20 0.002 0.008

Terminal: Matte tin plated, solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Polarity : Indicated by cathode band

Weight : 4.85±0.5 mg

Marking Code : S1, S2, S3

Ordering Information

Pin Configuration

Marking

Package

Part No.

Packing

SOD-323F 1N4148WS RR

SOD-323F 1N4448WS RR

SOD-323F 1N914BWS RR

SOD-323F 1N4148WS RRG

SOD-323F 1N4448WS RRG

SOD-323F 1N914BWS RRG

3K / 7" Reel

Suggested PAD Layout

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

Value

200

Units

Power Dissipation

V^RRM

V_R

Repetitive Peak Reverse Voltage

Reverse Voltage

100

Non-Repetitive Peak Forward Current

Mean Forward Current

I^FRM

300

°C/W

°C

150

Thermal Resistance (Junction to Ambient)

Junction and Storage Temperature Range

RθJA

T^J, T^STG

500

-65 to + 150

Notes: 1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts

may vary despending on application.

Version : F12

1N4148WS/1N4448WS/1N914BWS

200mW High Speed SMD Switching Diode

Small Signal Diode

Electrical Characteristics

Type Number

Symbol

Min

100

Max

Units

100uA

5uA

IR=

Reverse Breakdown Voltage

V^(BR)

Forward Voltage

5.0mA

10.0mA

100.0mA

20V

0.62

0.72

1.0

1N4448WS, 1N914BWS

1N4148WS

I^F=

V^F

1N4448WS, 1N914BWS

I^F=

μA

V^R=

Reverse Leakage Current

I^R

75V

5.0

4.0

V^R=0, f=1.0MHz

I_F=10mA, I_R=60mA, R_L=100Ω, I_RR=1mA

C^J

Junction Capacitance

Reverse Recovery Time

Trr

Tape & Reel specification

TSC label

Item

Symbol

Dimension(mm)

2.40 Max.

1.5 ± 0.1

Carrier depth

Sprocket hole

Top Cover Tape

178 ± 1

Reel outside diameter

Reel inner diameter

Feed hole width

50 Min.

Carieer Tape

13.0 ± 0.5

1.75 ±0.10

3.50 ±0.05

4.00 ±0.10

2.00 ±0.10

0.6 Max.

Sprocke hole position

Punch hole position

Sprocke hole pitch

Embossment center

Overall tape thickness

Tape width

Any Additional Label (If Required)

8.30 Max.

14.4 Max

Reel width

User Direction of Feed

Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be

within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10° within the determined cavity.

Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders.

Version : F12

1N4148WS/1N4448WS/1N914BWS

200mW High Speed SMD Switching Diode

Small Signal Diode

Rating and Characteristic Curves

FIG 1 Forward Voltage vs Forward Current

FIG 2 Reverse Current vs Reverse Voltage

1.40

100

1.20

1.00

Ta=25°C

25°C

0.80

0.1

0.60

125°

0.40

0.20

0.00

0.01

0.1

100

1000

100

120

Forward Current (mA)

Reverse Voltage (V)

FIG 3 Admissible Power Dissipation Curve

FIG 4 Typical Junction Capacitance

1.2

1.1

1.0

0.9

0.8

0.7

250

200

150

100

V_R=0V

Tj=25°C

f=1MHz

100

125

150

175

Reverse Voltage (V)

Ambient Temperature (°C)

Version : F12

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