MJE3055 [TRSYS]
Plastic-Encapsulated Transistors; 塑料封装晶体管型号: | MJE3055 |
厂家: | TRANSYS Electronics Limited |
描述: | Plastic-Encapsulated Transistors |
文件: | 总1页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
TO-220 Plastic-Encapsulated Transistors
MJE3055 TRANSISTOR (NPN)
TO-220
1. BASE
FEATURES
Power dissipation
2. COLLECTOR
3. EMITTER
PCM:
2
W (Tamb=25℃)
Collector current
ICM:
1 2 3
10
70
A
V
Collector-base voltage
V(BR)CBO
:
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=1mA, IE=0
MIN
70
60
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
Ic=200mA, IB=0
IE=1mA, IC=0
V
mA
mA
mA
VCB=70V, IE=0
VCE=30V, IE=0
VEB=5V, IC=0
1
0.7
5
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE(1)
VCE=4V, IC=4A
20
5
100
DC current gain
hFE(2)
VCE=4V, IC=10A
V
V
IC=4A, IB=400mA
IC=10A, IB=3.3A
1.1
8
VCE(sat)
Collector-emitter saturation voltage
VBE
V
Base-emitter voltage
Transition frequency
V
CE=4V, IC=4A
1.8
MHz
fT
VCE=10V, IC=500mA
2
相关型号:
MJE3055-BP
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
MCC
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