MCR100-8 [TRSYS]
Silicon Controlled Rectifier; 可控硅整流器
| 型号： | MCR100-8 |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | Silicon Controlled Rectifier |
| 文件： | 总1页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCR100 SERIES
Silicon Controlled Rectifier
VRRM = 100-600V, IF(RMS) = 0.8A
G
K
A
Symbol
O
(Tj = 25 C unless stated otherwise)
MAXIMUM RATINGS
Symbol
MCR100-3 MCR100-4
100 200
MCR100-6
MCR100-8
Unit
Parameter
VRRM
IT(RMS)
ITSM
Repetitive Peak Off-State Voltage
400
600
Volt
Amp
Amp
O
0.8 at tc = 85 C
On-State RMS Current
Peak Non-Repetitive Surge Current
10
0.415
5
2
2
2
A /S
I T for Fusing 8.3ms
I T
VGRM
IGM
Volt
Peak Reverse Gate Voltage
Peak Gate Current
0.1
0.1
Amp
Watt
Watt
PG(AV)
Forward Average Gate Power
Forward Peak Gate Power
1.0
PGM
T(STG)
Tj
O
-40 to +150
Maximum Storage Temperature Range
Maximum Junction Temperature Range
C
O
-40 to +110
C
ELECTRICAL CHARACTERISICS at
Parameter
Tj = 25 C Maximum. Unless stated Otherwise
Value
Typ
Condition
Symbol
ITM = 1.0 Amps
VTM
Unit
Volt
Max
Min
Peak Forward On-State Voltage
Repetitive Peak Reverse Current
Gate Trigger Voltage
1.7
100
0.80
200
O
VR = VRRM. tJ=110 C
IRRM
VGT
IGT
IL
Volt
0.62
40
µA
Gate Trigger Current
Latch Current
0.60
0.50
mA
mA
10.0
5.0
75
Holding Current
IH
O
C/W
RTH
Thermal Resistance (Junction to Case)
(J-c)
V/µS
A/µS
dV/dt
dA/dt
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Current
20
35
50
Mechanical Outline
0.165(4.19) max
0.125(3.18) min
0.205(5.20) max
0.175 (4.45) min
0.210(5.33) max
0.170 (4.32) min
1
2
3
1
2
3
Cathode Gate Anode
Case:TO - 92
0.500(12.70) min
0.021(50.533) max
0.016 (0.407) min
0.055(1.39) max
0.045 (1.15) min
0.055(1.39) max
0.045 (1.15) min
0.135(3.43) min
All Dimensions in Inches (Millimeters)
Third Angle Projection
0.105(2.66) max
0.080(2.04) min
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