2SD1899 [TRSYS]
TO-252 Plastic-Encapsulated Transistors; TO- 252塑料封装晶体管
| 型号： | 2SD1899 |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | TO-252 Plastic-Encapsulated Transistors |
| 文件： | 总1页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
TO-252 Plastic-Encapsulated Transistors
2SD1899-Z TRANSISTOR (NPN)
TO-252
FEATURES
Power dissipation
1. BASE
PCM:
2
W (Tamb=25℃)
2. COLLECTOR
3. EMITTER
Collector current
ICM:
3
A
V
1
2 3
Collector-base voltage
V(BR)CBO
:
60
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specifie)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
MIN
60
60
7
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=100µA,IC=0
µA
µA
VCB=60V, IE=0
10
10
IEBO
Emitter cut-off current
VEB=7V, IC=0
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
VCE=2V, IC=200mA
60
100
50
DC current gain
VCE=2V, IC=600mA
400
VCE=2V, IC=2A
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=1.5A, IB=150mA
IC=1.5A, IB=150mA
VCE=5V, IC=1.5A
0.25
1.2
MHz
pF
120
30
Cob
Collector output capacitance
Turn on Time
V
CB=10V, IE=0, f=1MHz
ton
0.5
2.0
0.5
VCC=30V, IC=1A, IB1=-IB2=-0.05A
µs
Switching Time
tstg
Storage Time
Fall Time
tf
CLASSIFICATION OF hFE(1)
Rank
M
L
K
Range
100-200
160-320
200-400
相关型号：
2SD1899-Z-AZ
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MP-3, 3 PIN
NEC
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