2SC2060 [TRSYS]
Plastic-Encapsulated Transistors; 塑料封装晶体管型号: | 2SC2060 |
厂家: | TRANSYS Electronics Limited |
描述: | Plastic-Encapsulated Transistors |
文件: | 总1页 (文件大小:56K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
TO-92MOD Plastic-Encapsulated Transistors
TO-92MOD
2SC2060 TRANSISTOR (NPN)
1. EMITTER
FEATURE
2. COLLECTOR
3. BASE
Power dissipation
PCM
:
0.75
W (Tamb=25℃)
Collector current
ICM
Collector-base voltage
V(BR)CBO
:
1
A
V
123
:
40
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= 100µA , IE=0
MIN
40
32
5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 1mA , IB=0
V
IE= 100µA, IC=0
V
VCB=40V , IE=0
VEB=4V , IC=0
0.5
0.1
400
0.4
µA
µA
Emitter cut-off current
IEBO
DC current gain
hFE(1)
VCE=3V, IC= 100mA
IC= 500m A, IB= 50mA
80
Collector-emitter saturation voltage
VCE(sat)
V
相关型号:
2SC2060-BP
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2SC2060/P
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2SC2060/PQ
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2SC2060/PR
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2SC2060/Q
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2SC2060/QR
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2SC2060T103
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
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2SC2060T103/PR
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
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2SC2060T103/Q
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
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2SC2060T103/R
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
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