2SB649A [TRSYS]
TO-126C Plastic-Encapsulated Transistors; TO- 126C塑料封装晶体管
| 型号： | 2SB649A |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | TO-126C Plastic-Encapsulated Transistors |
| 文件： | 总1页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
TO-126C Plastic-Encapsulated Transistors
2SB649/2SB649A TRANSISTOR (PNP)
TO-126C
FEATURES
Power dissipation
PCM:
1
W (Tamb=25℃)
1. EMITTER
2. COLLECTOR
3. BASE
Collector current
ICM:
-1.5
A
V
1 2 3
Collector-base voltage
V(BR)CBO : -180
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Ic=-1mA, IE=0
MIN
TYP
MAX
UNIT
V(BR)CBO
V
Collector-base breakdown voltage
-180
Ic=-10mA, IB=0
2SB649
-120
-160
V(BR)CEO
V
Collector-emitter breakdown voltage
2SB649A
V(BR)EBO
ICBO
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
IE=-1mA, IC=0
-5
µA
µA
VCB=-160V, IE=0
-10
-10
IEBO
VEB=-4V, IC=0
V
CE=-5V, IC=-150mA
CE=-5V, IC=-500mA
2SB649
60
60
320
200
hFE(1)
2SB649A
DC current gain
hFE(2)
VCE(sat)
VBE
V
30
V
V
Collector-emitter saturation voltage
Base-emitter voltage
IC=-500mA, IB=-50mA
CE=-5V, IC=-150mA
VCE=-5V, IC=-150mA
-1
V
-1.5
MHz
pF
Transition frequency
fT
140
27
Cob
Collector output capacitance
VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
Rank
B
C
D
Range
60-120
100-200
160-320
Marking
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