2SB1308 [TRSYS]
Plastic-Encapsulated Transistors; 塑料封装晶体管
| 型号： | 2SB1308 |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | Plastic-Encapsulated Transistors |
| 文件： | 总1页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I
M
I
T
E
D
SOT-89 Plastic-Encapsulated Transistors
2SB1308
TRANSISTOR (PNP)
SOT-89
FEATURES
1. BASE
Power dissipation
PCM:
Collector current
ICM:
0.5
-3
W (Tamb=25℃)
2. COLLECTO
1
2
A
V
3. EMITTER
3
Collector-base voltage
V(BR)CBO
:
-30
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=-50µA , IE=0
MIN
-30
-20
-6
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -1mA , IB=0
IE=-50µA, IC=0
VCB=-20 V , IE=0
VEB=-5 V , IC=0
V
V
-0.5
-0.5
µA
µA
IEBO
Emitter cut-off current
hFE
*
DC current gain
V
CE=-2V, IC= -0.5A
82
50
390
VCEsat
*
IC=-1.5A, IB= -0.15A
-0.45
V
Collector-emitter saturation voltage
VCE= -6V, IC=-50mA
f =30MHz
MHz
Transition frequency
f T
* Measured using pulse current.
CLASSIFICATION OF hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
Marking
BFP,BFQ,BFR
相关型号：
2SB1308-Q-TP
Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
MCC
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