1N5396 [TRSYS]
PLASTIC SILICON RECTIFIER; 塑料硅整流型号: | 1N5396 |
厂家: | TRANSYS Electronics Limited |
描述: | PLASTIC SILICON RECTIFIER |
文件: | 总2页 (文件大小:125K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N5391 THRU 1N5399
PLASTIC SILICON RECTIFIER
VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes
FEATURES
l
l
l
l
Low cost
DO-15
High current capability
High reliability
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
1.5 ampere operation at TL=70 with no thermal runaway
Exceeds environmental standards of MIL-S-19500/228
Low leakage
l
l
l
MECHANICAL DATA
Case: Molded plastic , DO-15
Terminals: Plated axial leads, solderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Mounting Position: Any
Weight: 0.015 ounce, 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399
UNITS
50
35
50
100
70
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
800
560
800
1000
700
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375"(9.5mm) Lead Length at
TA=60
V
V
V
A
100
1000
1.5
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
50
A
Maximum Forward Voltage at 1.5A
Maximum Reverse Current Rated TA=25
DC Blocking Voltage TA=100
1.4
5.0
500
V
A
A
Typical Junction capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
TJ,TSTG
25
26.0
-55 TO +150
PF
/W
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Thermal Resistance Junction to Ambient and from junction to lead at 0.375"(9.5mm) lead length P.C.Board
mounted.
RATING AND CHARACTERISTIC CURVES
1N5391 THRU 1N5399
Fig. 1-TYPICAL FORWARD CHARACTERISTICS
Fig. 2-PEAK FORWARD SURGE CURRENT
Fig. 3-FORWARD CURRENT DERATING CURVE
Fig. 4-TYPICAL JUNCTION CAPACITANCE
相关型号:
1N5396/4E
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY
1N5396/4G
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY
1N5396/4H
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY
1N5396/56
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY
1N5396/58
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY
1N5396/65
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY
1N5396/66
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY
1N5396/70
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY
1N5396/72
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明