T2G4003532-FL [TRIQUINT]
30W, 32V DC 3.5 GHz, GaN RF Power Transistor;
| 型号： | T2G4003532-FL |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 30W, 32V DC 3.5 GHz, GaN RF Power Transistor |
| 文件： | 总13页 (文件大小：990K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
Functional Block Diagram
• Frequency: DC to 3.5 GHz
• Output Power (P3dB): 28 W at 3.5 GHz
• Linear Gain: >16 dB at 3.5 GHz
• Operating Voltage: 32 V
• Low thermal resistance package
General Description
Pin Configuration
The TriQuint T2G4003532-FL is a 30 W (P3dB) discrete
GaN on SiC HEMT which operates from DC to 3.5 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 process, which features advanced field plate
techniques to optimize power and efficiency at high drain
bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Pin No.
1
Label
VD / RF OUT
VG / RF IN
Source
2
Flange
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Ordering Information
Part ECCN
Description
Packaged part
Flangeless
T2G4003532-FL EAR99
T2G4003532-
EAR99
2.7-3.5 GHz
Evaluation Board
FS/FL-EVB1
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 1 of 13 -
© 2013 TriQuint
www.triquint.com
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Value
Parameter
Drain Voltage (VD)
Value
32 V (Typ.)
Breakdown Voltage (BVDG
Gate Voltage Range (VG)
Drain Current (ID)
)
100 V
-7 to 0 V
4.5 A
Drain Quiescent Current (IDQ
Peak Drain Current ( ID)
Gate Voltage (VG)
)
150 mA (Typ.)
1900 mA (Typ.)
-2.9 V (Typ.)
225 °C (Max)
28 W (Max)
46 W (Max)
Gate Current (IG)
-7.5 to 12 mA
40 W
Power Dissipation (PD)
Channel Temperature (TCH)
Power Dissipation, CW (PD)
RF Input Power, CW,
T = 25°C (PIN)
38.75 dBm
275 °C
Power Dissipation, Pulse (PD)
Channel Temperature (TCH)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Mounting Temperature
(30 Seconds)
320 °C
Storage Temperature
-40 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
RF Characterization – Load Pull Performance at 1.0 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 150 mA
Symbol Parameter
Linear Gain
Min
Typical
21.6
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
27.0
W
DE3dB
PAE3dB
G3dB
51.0
%
50.0
%
Gain at 3 dB Compression
18.6
dB
Notes:
1. VDS = 32 V, IDQ = 150 mA; Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 3.5 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 150 mA
Symbol Parameter
Linear Gain
Min
Typical
17.7
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
31.0
W
DE3dB
PAE3dB
G3dB
59.7
%
57.6
%
Gain at 3 dB Compression
14.7
dB
Notes:
1. VDS = 32 V, IDQ = 150 mA; Pulse: 100µs, 20%
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 2 of 13 -
© 2013 TriQuint
www.triquint.com
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
RF Characterization – Performance at 3.5 GHz (1, 2)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 150 mA
Symbol Parameter
Linear Gain
Min
Typical
16.5
Max
Units
dB
GLIN
16.0
25.0
45.5
13.0
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
28.0
W
DE3dB
G3dB
48.8
%
13.5
dB
Notes:
1. Performance at 3.5 GHz in the 2.7 to 3.5 GHz Evaluation Board
2. VDS = 32 V, IDQ = 150 mA; Pulse: 100µs, 20%
RF Characterization – Narrow Band Performance at 3.50 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 150 mA
Symbol Parameter
VSWR Impedance Mismatch Ruggedness
Typical
10:1
Notes:
1. VDS = 32 V, IDQ = 150 mA, CW at P1dB
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 3 of 13 -
© 2013 TriQuint
www.triquint.com
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Thermal and Reliability Information
Parameter
Test Conditions
Value
4.9
Units
ºC/W
°C
Thermal Resistance (θJC)
Channel Temperature (TCH)
Notes:
DC at 85 °C Case
225
Thermal resistance measured to bottom of package, CW.
Median Lifetime
Maximum Channel Temperature
TBASE = 85°C, PD = 30 W
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 4 of 13 -
© 2013 TriQuint
www.triquint.com
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not
the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The
impedances listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 150 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 5 of 13 -
© 2013 TriQuint
www.triquint.com
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Typical Performance
Performance is based on compromised impedance point and measured at DUT reference plane.
T2G4003532-FL Gain DrEff. and PAE vs. Pout
T2G4003532-FL Gain DrEff. and PAE vs. Pout
1000 MHz, 100 usec 20%, Vds = 32V, Idq = 150 mA
2000 MHz, 100 usec 20%, Vds = 32V, Idq = 150 mA
26
24
22
20
18
16
14
12
10
80
70
60
50
40
30
20
10
0
26
24
22
20
18
16
14
12
10
80
70
60
50
40
30
20
10
0
Ω
ZS
ZL
=
=
4.23 - j2.49
8.61 + j3.85
Ω
Ω
= 1.96 + j3.03
ZS
Ω
ZL = 15.32 - j4.87
Gain
DrEff.
PAE
Gain
DrEff.
PAE
32
34
36
38
40
42
44
46
32
34
36
38
40
42
44
46
Pout [dBm]
Pout [dBm]
T2G4003532-FL Gain DrEff. and PAE vs. Pout
T2G4003532-FL Gain DrEff. and PAE vs. Pout
3000 MHz, 100 usec 20%, Vds = 32V, Idq = 150 mA
3500 MHz, 100 usec 20%, Vds = 32V, Idq = 150 mA
26
24
22
20
18
16
14
12
10
80
70
60
50
40
30
20
10
0
26
24
22
20
18
16
14
12
10
80
70
60
50
40
30
20
10
0
Ω
Ω
Ω
ZS
ZL
=
=
6.05 + j1.70
7.64 + j2.88
ZS = 15.13 - j9.33
ZL 7.13 + j2.82
=
Ω
Gain
DrEff.
PAE
Gain
DrEff.
PAE
32
34
36
38
40
42
44
46
32
34
36
38
40
42
44
46
Pout [dBm]
Pout [dBm]
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 6 of 13 -
© 2013 TriQuint
www.triquint.com
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Performance Over Temperature (1, 2)
Performance measured in TriQuint’s 2.7 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 150 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 7 of 13 -
© 2013 TriQuint
www.triquint.com
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Performance (1, 2)
Performance at 3 dB Compression
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 150 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
Application Circuit
Bias-up Procedure
Bias-down Procedure
Set gate voltage (VG) to -5.0V
Set drain voltage (VD) to 32 V
Slowly increase VG until quiescent ID is 150 mA.
Apply RF signal
Turn off RF signal
Turn off VD and wait 1 second to allow drain capacitor
dissipation
Turn off VG
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 8 of 13 -
© 2013 TriQuint
www.triquint.com
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Layout
Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Des.
C1, C2, C3, C14
Value
10 pF
Qty Manufacturer
Part Number
600S100FT250XT
C1206C104K1RACTU
18121C105KAT2A
293D226X9035E2TE3
477KXM035M
4
2
2
1
1
1
2
1
1
1
ATC
C6, C12
C7, C13
C8
0.1 uF
Kemet
1.0 uF
AVX
22 uF
Vishay Sprague
Illinois Capacitor
Dielectric Labs
Coilcraft
C15
470 uF
C16
2400 pF
8.0 nH
C08BL242X_5SN_X0T
A03TJLB
L1, L2
R1
12.1 Ohms
1000 Ohms
97.6 Ohms
Vishay Dale
Vishay Dale
Vishay Dale
CRCW120612R1FKEA
CRCW12061K00FKEA
CRCW060397R6FKEA
R2
R3
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 9 of 13 -
© 2013 TriQuint
www.triquint.com
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Pin Layout
Note:
The T2G4003532-FL will be marked with the “3532FS2” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.
Pin Description
Pin
Symbol
Description
Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an
example.
1
VD / RF OUT
Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an
example.
2
3
VG / RF IN
Flange
Source connected to ground; see EVB Layout on page 9 as an example.
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 10 of 13 -
© 2013 TriQuint
www.triquint.com
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Mechanical Information
All dimensions are in millimeters.
Note:
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 11 of 13 -
© 2013 TriQuint
www.triquint.com
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°C
Caution! ESD-Sensitive Device
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: Class 1B
Value:
Test:
Standard:
Passes ≥ 500 V to < 1000 V max.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
This product also has the following attributes:
•
•
•
•
•
•
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
MSL Rating
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce EAR99
Recommended Soldering Temperature Profile
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 12 of 13 -
© 2013 TriQuint
www.triquint.com
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
- 13 of 13 -
© 2013 TriQuint
www.triquint.com
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