06032U100FAT2A [TRIQUINT]
¼W High Linearity Amplifier; ¼W高线性度放大器
| 型号： | 06032U100FAT2A |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | ¼W High Linearity Amplifier |
| 文件： | 总19页 (文件大小：1189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TQP7M9101
¼W High Linearity Amplifier
Applications
.
.
.
.
Repeaters
Mobile Infrastructure
CDMA / WCDMA / LTE
General Purpose Wireless
3-pin SOT-89 Package
Product Features
Functional Block Diagram
.
.
.
.
.
.
.
.
.
.
400-4000 MHz
+25 dBm P1dB
+39.5 dBm Output IP3
17.5 dB Gain @ 2140 MHz
+5V Single Supply, 87 mA Current
No output matching required
Internal RF overdrive protection
Internal DC overvoltage protection
On chip ESD protection
SOT-89 Package
GND
4
1
2
3
RF IN
GND
RF OUT
General Description
Pin Configuration
The TQP7M9101 is a high-linearity driver amplifier in a
standard SOT-89 surface mount package. This
InGaP/GaAs HBT delivers high performance across a
broad range of frequencies with +40 dBm OIP3 and +25
dBm P1dB while only consuming 87 mA quiescent
current. All devices are 100% RF and DC tested.
Pin #
Symbol
1
RF Input
3
RF Output / Vcc
Ground
2, 4
The TQP7M9101 incorporates on-chip features that
differentiate it from other products in the market. The RF
output is internally matched in to 50 ohms. Only input
matching is required for optimal performance in specific
frequency bands making the component easy for design
engineers to implement in their systems. The amplifier
integrates an on-chip DC over-voltage and RF over-drive
protection. This protects the amplifier from electrical DC
voltage surges and high input RF input power levels that
may occur in a system. On-chip ESD protection allows
the amplifier to have a very robust Class 2 HBM ESD
rating.
Ordering Information
The TQP7M9101 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device an
excellent candidate for transceiver line cards in current
and next generation multi-carrier 3G / 4G base stations.
Part No.
TQP7M9101
Description
0.25 W High Linearity Amplifier
TQP7M9101-PCB900
TQP7M9101 869-960 MHz EVB
TQP7M9101-PCB2140 TQP7M9101 2.11-2.17 GHz EVB
Standard T/R size = 1000 pieces on a 7” reel.
Advanced Data Sheet: Rev D 09/19/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
- 1 of 1 -
© 2011 TriQuint Semiconductor, Inc.
TQP7M9101
¼W High Linearity Amplifier
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Vcc
Min Typ Max Units
Storage Temperature
Device Voltage,Vcc
Maximum Input Power
-65 to +150 °C
+8 V
+3
+5
+5.25
V
Tcase
-40
85
°C
°C
Tj (for>106 hours MTTF)
160
+23 dBm
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: +25°C, +5V Vsupply, in a tuned application circuit
Parameter
Operational Frequency Range
Conditions
Min
400
Typical
Max
4000
Units
MHz
MHz
dB
Test Frequency
2140
17.5
15
Gain
Input Return Loss
Output Return Loss
Output P1dB
dB
13.5
+25
+39.5
+14.5
3.9
dB
dBm
dBm
dBm
dB
Output IP3
See Note 1.
WCDMA Pout @ -55 dBc ACLR
Noise Figure
5
V
Vcc
87
mA
°C/W
Quiescent Current, Icq
Thermal Resistance (jnc to case) θjc
71
Notes
1. OIP3 measured with two tones at an output power of +8 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule.
Advanced Data Sheet: Rev D 09/19/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
- 2 of 2 -
© 2011 TriQuint Semiconductor, Inc.
TQP7M9101
¼W High Linearity Amplifier
Device Characterization Data
OutputSmith Chart
4 GHz
InputSmith Chart
Gain vs Frequency
1
40
4 GHz
0.8
30
0.6
0.4
0.2
0
Maximum Stable Gain (GMAX)
20
0.4 GHz
10
-0.2
-1 -0.75-0.5-0.25 0 0.250.5 0.75 1
Insertion Gain (S21)
-0.4
0.4 GHz
0
-0.6
-0.8
-1
‐10
0
1
2
3
4
Frequency (GHz)
Note: The gain for the unmatched device in a 50 ohm system is shown as the trace labeled “Insertion Gain (S21)”. In a circuit tuned
for a particular frequency band, it is expected that actual gain will be higher, up to the Maximum Stable Gain (GMAX).
S-Parameter Data
Vcc = +5 V, Icc = 87 mA, T = +25°C, unmatched 50 Ohm system, reference plane at device leads
Freq
(MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang) S12 (dB)
S12 (ang)
S22 (dB) S22 (ang)
400
-3.74
-2.43
-2.00
-1.81
-1.71
-1.68
-1.66
-1.65
-1.56
-1.60
-1.43
-1.41
-1.43
-1.45
-1.36
-1.40
-1.32
-1.19
-1.11
-154.94
-174.00
175.84
167.43
160.50
155.82
149.16
143.36
137.28
131.41
126.29
122.01
117.57
114.12
109.38
103.72
98.51
16.08
16.93
16.72
16.29
15.71
15.15
14.58
13.98
13.45
12.80
12.14
11.52
10.99
10.53
10.15
9.69
172.65
152.42
137.72
123.90
112.48
102.29
91.96
82.32
72.43
64.37
56.45
48.81
41.39
34.73
27.42
19.90
12.40
5.24
-30.84
-28.85
-28.64
-28.38
-28.45
-28.29
-28.34
-28.40
-28.25
-28.52
-28.43
-28.73
-28.68
-28.78
-28.85
-29.00
-29.04
-29.04
-29.02
32.65
13.25
3.42
-4.47
-6.02
-6.63
-7.05
-7.29
-7.67
-7.92
-8.05
-8.05
-7.96
-7.47
-7.49
-7.71
-7.92
-7.87
-7.85
-7.32
-6.75
-6.53
155.03
149.89
147.55
144.48
142.81
139.67
136.04
132.86
129.68
125.67
122.90
122.21
119.34
116.57
114.37
106.77
100.14
96.77
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
-4.74
-10.23
-15.72
-19.66
-25.64
-30.76
-35.06
-39.47
-42.87
-47.17
-49.96
-52.90
-59.40
-63.10
-68.03
-70.86
8.99
93.06
8.49
89.37
8.02
-0.57
95.94
Advanced Data Sheet: Rev D 09/19/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
- 3 of 3 -
© 2011 TriQuint Semiconductor, Inc.
TQP7M9101
¼W High Linearity Amplifier
Application Circuit 869-960 MHz
1071363AW REV - 1071363PC REV -
+VCC
GND
SOT89 EVAL. BRD., 1/2 WATT
Notes:
1. See PC Board Layout, page 8 for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistors (C2,R1,R4) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
Distance from U1 Pin 1 (left edge) to C5 (right edge): 410 mils (19.0 deg. at 900 MHz)
Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (5.3 deg. at 900 MHz)
Distance from U1 Pin 3 (right edge) to R2 (left edge): 270 mils (12.5 deg. at 900 MHz)
Bill of Material
Ref Des
n/a
J1, J2
U1
R1, C2, R4
L1
C1
R2, C3
C4
C5
Value
n/a
Description
Printed Circuit Board
RF SMA Connector
Amplifier, SOT-89 pkg.
Resistor, Chip, 0603, 5%, 1/16W
Inductor, 0805, 5%, Coilcraft CS Series
Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG
Cap., Chip, 5%, 50V, NPO/COG
Cap., Chip, 10%, 10V, X5R
Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG
Solder Turret
Manuf.
TriQuint
Johnson Comp.
TriQuint
various
Coilcraft
AVX
various
Part Number
1071363
142-0701-851
TQP7M9101
n/a
n/a
0 Ω
33 nH
5.6 pF
100 pF
1.0 uF
3.9 pF
n/a
0805CS-330XJLB
06032U5R6BAT2A
various
AVX
various
06032U3R9BAT2A
J3, J4
Advanced Data Sheet: Rev D 09/19/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
- 4 of 4 -
© 2011 TriQuint Semiconductor, Inc.
TQP7M9101
¼W High Linearity Amplifier
Typical Performance 869-960 MHz
Frequency
MHz
dB
dB
869
20.2
12
920
20.4
17
960
20.1
14
Gain
Input Return Loss
Output Return Loss
dB
18
23
17
Output P1dB
dBm
dBm
dBm
dB
+24.3
+39.2
+12.7
4.0
+24.4
+38.6
+13.4
4.0
+24.4
+38.2
+13.5
3.9
Output IP3 (+8 dBm/tone, ∆f = 1 MHz)
WCDMA Channel Power (at -55 dBc ACLR) [1]
Noise Figure
Supply Voltage, Vcc
Quiescent Collector Current, Icq
Notes:
V
mA
+5
87
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots 869-960 MHz
Gain vs. Frequency
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
23
22
21
20
19
18
0
0
-5
−40
+25
+85
°
°
°
C
C
C
-5
−40
+25
+85
°
°
°
C
C
C
−40
+25
+85
°
°
°
C
C
C
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
860
880
900
920
940
960
860
880
900
Axis Title
920
940
960
860
860
-3
880
900
Axis Title
920
940
960
960
7
Freq (MHz)
ACLR Vs. Output Power
OIP3 Vs. Pout/Tone
P1dB vs. Frequency
-35
-40
-45
-50
-55
-60
-65
44
42
40
38
36
34
27
26
25
24
23
22
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
Freq.=920 MHz
1 MHz Tone Spacing
Freq.=920 MHz
−40
+25
+85
°
°
°
C
C
C
+85
+25
−40
°
°
°
C
C
C
+85
+25
−40
°
°
°
C
C
C
11
12
13
14
15
16
17
6
8
10
12
14
16
880
900
920
940
Pout (dBm)
Pout/Tone (dBm)
Frequency (MHz)
ACLR Vs. Output Power
OIP3 Vs. Pout/Tone
Output Power vs. Input Power
-35
-40
-45
-50
-55
-60
-65
44
42
40
38
36
34
26
24
22
20
18
16
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
1 MHz Tone Spacing
°
Temp.=+25
C
Freq.= 920 MHz
°
Temp.=+25 C
960 MHz
920 MHz
869 MHz
960 MHz
920 MHz
869 MHz
−40
+25
+85
°
°
°
C
C
C
11
12
13
14
15
16
17
6
8
10
12
14
16
-1
1
3
5
Pout (dBm)
Pout/Tone (dBm)
Pin (dBm)
Advanced Data Sheet: Rev D 09/19/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
- 5 of 5 -
© 2011 TriQuint Semiconductor, Inc.
TQP7M9101
¼W High Linearity Amplifier
Application Circuit 2110-2170 MHz
1071363AW REV - 1071363PC REV -
+VCC
GND
SOT89 EVAL. BRD., 1/2 WATT
Notes:
1. See PC Board Layout, page 8 for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistors (C1,R2,R4) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
Distance from U1 Pin 1 (left edge) to R8 (right edge): 40 mils (4.4 deg. at 2140 MHz)
Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (12.7 deg. at 2140 MHz)
Distance from U1 Pin 3 (right edge) to C2 (left edge): 450 mils (49.8 deg. at 2140 MHz)
Bill of Material
Ref Des
n/a
Value
n/a
Description
Printed Circuit Board
Manuf.
TriQuint
Part Number
1071363
J1, J2
U1
C1, R2, R4
L1
R1
R8
C2
C3
C4
J3, J4
n/a
n/a
0 Ω
18 nH
1.8 pF
1.0 pF
10 pF
22 pF
1.0 uF
n/a
RF SMA Connector
Amplifier, SOT-89 pkg.
Johnson Comp. 142-0701-851
TriQuint
various
Coilcraft
AVX
AVX
AVX
TQP7M9101
Resistor, Chip, 0603, 5%, 1/16W
Inductor, 0805, 5%, Coilcraft CS Series
Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG
Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG
Cap., Chip, 0603, +/-1%. 200V NPO/COG
Cap., Chip, 5%, 50V, NPO/COG
Cap., Chip, 10%, 10V, X5R
Solder Turret
0805CS-180XJLB
06032U1R8BAT2A
06032U1R0BAT2A
06032U100FAT2A
various
various
various
Advanced Data Sheet: Rev D 09/19/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
- 6 of 6 -
© 2011 TriQuint Semiconductor, Inc.
TQP7M9101
¼W High Linearity Amplifier
Typical Performance 2110-2170 MHz
Frequency
MHz
dB
dB
2110
17.6
15
2140
17.5
15
2170
17.4
15
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (+8 dBm/tone, ∆f = 1 MHz)
WCDMA Channel Power (at -55 dBc ACLR) 1
Noise Figure
dB
14
13.5
+24.8
+39.5
+14.5
3.9
13
dBm
dBm
dBm
dB
+24.8
+39.5
+14.5
4.0
+24.6
+39.5
+14.5
4.1
Supply Voltage, Vcc
Quiescent Collector Current, Icq
V
mA
+5
87
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots 2110-2170 MHz
Gain vs. Frequency
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
20
19
18
17
16
15
0
0
-5
−40
+25
+85
°
°
°
C
C
C
-5
−40
+25
+85
°
°
°
C
C
C
−40
+25
+85
°
°
°
C
C
C
-10
-15
-20
-10
-15
-20
2110
2120
2130
2140
2150
2160
2170
2110
2120
2130
2140
2150
2160
2170
2110
2120
2130
2140
2150
2160
2170
Freq (MHz)
Freq (MHz)
Freq (MHz)
ACLR Vs. Output Power
OIP3 Vs. Pout/Tone
P1dB vs. Frequency
-35
-40
-45
-50
-55
-60
-65
44
42
40
38
36
34
27
26
25
24
23
22
Freq.= 2140 MHz
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
Freq.=2140 MHz
1 MHz Tone Spacing
−40
+25
+85
°
°
°
C
C
C
+85°
+25°
−40°
C
C
C
+85°
+25°
−40°
C
C
C
11
12
13
14
15
16
17
6
8
10
12
14
16
2110
2120
2130
2140
2150
2160
2170
Pout (dBm)
Pout/Tone (dBm)
Frequency (MHz)
ACLR Vs. Output Power
OIP3 Vs. Pout/Tone
Output Power vs. Input Power over Temp
-35
-40
-45
-50
-55
-60
-65
42
41
40
39
38
37
30
27
24
21
18
15
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
1 MHz Tone Spacing
°
Temp.=+25 C
°
Temp.=+25 C
−40
+25
+85
°
°
°
C
C
C
2170 MHz
2140 MHz
2110 MHz
2170 MHz
2140 MHz
2110 MHz
11
12
13
14
15
16
17
6
8
10
12
14
16
0
3
6
9
12
15
Pout (dBm)
Pout/Tone (dBm)
Pin (dBm)
Advanced Data Sheet: Rev D 09/19/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
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© 2011 TriQuint Semiconductor, Inc.
TQP7M9101
¼W High Linearity Amplifier
Pin Configuration and Description
GND
4
1
2
3
RF IN
GND
RF OUT
Pin
1
Symbol
RF IN
Description
RF Input. Requires conjugate match for optimal performance.
2, 4
3
GND
RF/DC Ground Connection
RFout / Vcc
RF Output, matched to 50 ohms. External DC Block and supply voltage is required.
Applications Information
PC Board Layout
PCB Material (stackup):
1071363AW REV - 1071363PC REV -
+VCC
1 oz. Cu top layer
0.014 inch Nelco N-4000-13, εr=3.7
1 oz. Cu MIDDLE layer 1
Core Nelco N-4000-13
GND
1 oz. Cu middle layer 2
0.014 inch Nelco N-4000-13
1 oz. Cu bottom layer
Finished board thickness is 0.062±.006
50 ohm line dimensions: width = .031”, spacing = .035”.
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary
from supplier to supplier, careful process development is
recommended.
SOT89 EVAL. BRD., 1/2 WATT
Advanced Data Sheet: Rev D 09/19/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
- 8 of 8 -
© 2011 TriQuint Semiconductor, Inc.
TQP7M9101
¼W High Linearity Amplifier
Mechanical Information
Package Information and Dimensions
This package is lead-free/RoHS-
compliant. The plating material on the
leads is NiPdAu. It is compatible with
7M9101
both lead-free (maximum 260 °C reflow
temperature) and lead (maximum 245 °C
reflow temperature) soldering processes.
The component will be marked with a
“7M9101”
designator
with
an
alphanumeric lot code on the top surface
of package.
Mounting Configuration
All dimensions are in millimeters (inches). Angles are in degrees.
Notes:
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
3. RF trace width depends upon the PC board material and construction.
4. Use 1 oz. Copper minimum.
Advanced Data Sheet: Rev D 09/19/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
- 9 of 9 -
© 2011 TriQuint Semiconductor, Inc.
TQP7M9101
¼W High Linearity Amplifier
Product Compliance Information
ESD Information
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: Class 2
Value:
Test:
>2000V to <4000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Standard:
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
ESD Rating: Class IV
Value:
Test:
>2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
Standard:
MSL Rating
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com
Email: info-sales@tqs.com
Tel:
Fax:
+1.503.615.9000
+1.503.615.8902
For technical questions and application information:
Email: sjcapplications.engineering@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Advanced Data Sheet: Rev D 09/19/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
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© 2011 TriQuint Semiconductor, Inc.
TQP7M9102
½W High Linearity Amplifier
Applications
.
.
.
.
Repeaters
Mobile Infrastructure
CDMA / WCDMA / LTE
General Purpose Wireless
3-pin SOT-89 Package
Product Features
Functional Block Diagram
.
.
.
.
.
.
.
.
.
400-4000 MHz
+27.5 dBm P1dB
+44 dBm Output IP3
17.8 dB Gain @ 2140 MHz
+5V Single Supply, 135 mA Current
Internal RF overdrive protection
Internal DC overvoltage protection
On chip ESD protection
SOT-89 Package
GND
4
1
2
3
RF IN
GND
RF OUT
General Description
Pin Configuration
The TQP7M9102 is a high linearity driver amplifier in a
low-cost, RoHS compliant, surface mount package. This
InGaP/GaAs HBT delivers high performance across a
broad range of frequencies with +44 dBm OIP3 and +27.5
dBm P1dB while only consuming 135 mA quiescent
current. All devices are 100% RF and DC tested.
Pin #
Symbol
1
RF Input
3
RF Output / Vcc
Ground
2, 4
The TQP7M9102 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier integrates an on-chip DC over-voltage and RF
over-drive protection. This protects the amplifier from
electrical DC voltage surges and high input RF input
power levels that may occur in a system. On-chip ESD
protection allows the amplifier to have a very robust Class
2 HBM ESD rating.
The TQP7M9102 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device an
excellent candidate for transceiver line cards in current
and next generation multi-carrier 3G / 4G base stations.
Ordering Information
Part No.
TQP7M9102
Description
0.5 W High Linearity Amplifier
TQP7M9102-PCB900
TQP7M9102 869-960MHz EVB
TQP7M9102-PCB2140 TQP7M9102 2.11-2.17GHz EVB
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev D 10/04/11
Disclaimer: Subject to change without notice
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© 2011 TriQuint Semiconductor, Inc.
TQP7M9102
½W High Linearity Amplifier
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Vdd
Min Typ Max Units
Storage Temperature
Device Voltage, Vdd
Maximum Input Power, CW
-65 to +150 oC
+8 V
+4.75
+5
+5.25
V
Tcase
-40
85
oC
oC
Tj (for>106 hours MTTF)
160
+27 dBm
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: +25ºC, +5V Vsupply, 50 Ω system, tuned application circuit
Parameter
Operational Frequency Range
Conditions
Min
400
Typical
Max
4000
Units
MHz
MHz
dB
Test Frequency
2140
17.4
12
Gain
15
Input Return Loss
Output Return Loss
Output P1dB
dB
10
dB
+26.4
+41
+27.5
+43.8
+18.5
3.9
dBm
dBm
dBm
dB
Output IP3
See Note 1.
See Note 2.
WCDMA Pout @ -50 dBc ACLR
Noise Figure
5
V
Vcc
115
137
155
50
mA
oC/W
Quiescent Current, Icq
Thermal Resistance (jnc to case) θjc
Notes
1. OIP3 measured with two tones at an output power of +9 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule.
2. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Data Sheet: Rev D 10/04/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
- 2 of 9 -
© 2011 TriQuint Semiconductor, Inc.
TQP7M9102
½W High Linearity Amplifier
Application Circuit 869-960 MHz (TQP7M9102-PCB900)
1071363AW REV - 1071363PC REV -
J3
+VCC
J4
GND
C4
C3
U1
C1
R1
R2
C2
SOT89 EVAL. BRD., 1/2 WATT
Notes:
1. See PC Board Layout, page 7 for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistor (R4) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
Distance from U1 Pin 1 (left edge) to C5 (right edge): 255 mils (12.1 deg. at 920 MHz)
Distance from U1 Pin 1 (left edge) to C1 (right edge): 460 mils (21.9 deg. at 920 MHz)
Distance from U1 Pin 3 (right edge) to R2 (left edge): 290 mils (13.8 deg. at 920 MHz)
Distance from U1 Pin 3 (right edge) to C6 (left edge): 370 mils (17.6 deg. at 920 MHz)
Bill of Material
Ref Des
n/a
U1
R4
R1
R2
L1
C1, C5
C6
C2, C3
C4
Value
n/a
Description
Manuf.
TriQuint
TriQuint
various
various
Toko
Coilcraft
AVX
AVX
Part Number
1071363
TQP7M9102
Printed Circuit Board
n/a
0 Ω
TQP7M9102 Amplifier, SOT-89 pkg.
Resistor, Chip, 0603, 5%, 1/16W
Resistor, Chip, 0603, 5%, 1/16W
Inductor, 0603, +/-0.3 nH
Inductor, 0805, 5%, Coilcraft CS Series
Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG
Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG
Cap., Chip, 5%, 50V, NPO/COG
Cap., Chip, 10%, 10V, X5R
1.5 Ω
2.2 nH
33 nH
5.6 pF
2.7 pF
100 pF
1.0 uF
LL1608-FSL2N2S
0805CS-330XJLB
06032U5R6BAT2A
06032U2R7BAT2A
various
various
Data Sheet: Rev D 10/04/11
© 2011 TriQuint Semiconductor, Inc.
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
- 3 of 9 -
TQP7M9102
½W High Linearity Amplifier
Typical Performance 869-960 MHz
Frequency
MHz
dB
dB
869
21.8
-10
920
21.9
-16
960
21.7
-17
Gain
Input Return Loss
Output Return Loss
dB
-12
-10
-9
Output P1dB
dBm
dBm
dBm
dB
+27.3
+42.7
+18.0
5.9
+27.4
+43.4
+18.2
5.9
+27.4
+43.9
+18.1
5.9
Output IP3 (+19 dBm/tone, ∆f = 1 MHz)
WCDMA Channel Power (at -50 dBc ACLR) [1]
Noise Figure
Supply Voltage, Vcc
Quiescent Collector Current, Icq
V
mA
+5
137
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots 869-960 MHz
Gain vs. Frequency
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
24
23
22
21
20
19
0
-5
0
-5
−40
+25
+85
°
°
°
C
C
C
−40°
+25°
+85°
C
C
C
−40°
+25°
+85°
C
C
C
-10
-15
-20
-25
-10
-15
-20
-25
860
880
900
920
940
960
860
880
900
920
940
960
860
860
-3
880
900
920
940
960
960
7
Freq (MHz)
Freq (MHz)
Freq (MHz)
ACLR Vs. Output Power
OIP3 Vs. Pout/Tone
P1dB vs. Frequency
-35
-40
-45
-50
-55
-60
-65
46
44
42
40
38
36
30
29
28
27
26
25
Freq.=920 MHz
1 MHz Tone Spacing
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
Freq.=920 MHz
−40
°
°
°
C
C
C
+25
+85
+85
+25
−40
°
°
°
C
C
C
+85°
+25°
−40°
C
C
C
12
13
14
15
16
17
18
19
20
11
13
15
17
19
21
880
900
920
940
Pout (dBm)
Pout/Tone (dBm)
Frequency (MHz)
ACLR Vs. Output Power
OIP3 Vs. Pout/Tone
Output Power vs. Input Power
-35
-40
-45
-50
-55
-60
-65
46
44
42
40
38
36
29
27
25
23
21
19
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
1 MHz Tone Spacing
°
Temp.=+25 C
Freq.= 920 MHz
°
Temp.=+25 C
960 MHz
920 MHz
869 MHz
−40
°
°
°
C
C
C
960 MHz
920 MHz
869 MHz
+25
+85
12
13
14
15
16
Pout (dBm)
17
18
19
20
11
13
15
17
19
21
-1
1
3
5
Pout/Tone (dBm)
Pin (dBm)
Data Sheet: Rev D 10/04/11
© 2011 TriQuint Semiconductor, Inc.
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
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TQP7M9102
½W High Linearity Amplifier
Application Circuit 2110-2170 MHz (TQP7M9102-PCB2140)
1071363AW REV - 1071363PC REV -
+VCC
GD
SOT89 EVAL. BRD., 1/2 WATT
Notes:
1. See PC Board Layout, page 7 for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistors (C1, R2) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
Distance from U1 Pin 1 (left edge) to R8 (right edge): 40 mils (4.4 deg. at 2140 MHz)
Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (12.7 deg. at 2140 MHz)
Distance from U1 Pin 3 (right edge) to C6 (left edge): 180 mils (19.9 deg. at 2140 MHz)
Distance from U1 Pin 3 (right edge) to C2 (left edge): 450 mils (49.8 deg. at 2140 MHz)
Bill of Material
Ref Des
n/a
U1
C1, R2, R4
L1
R1, R8
C2
C3
C4
C6
Value
n/a
Description
Printed Circuit Board
Manuf.
TriQuint
TriQuint
various
Coilcraft
AVX
Part Number
1071363
TQP7M9102
n/a
0 Ω
TQP7M9102 Amplifier, SOT-89 pkg.
Resistor, Chip, 0603, 5%, 1/16W
Inductor, 0805, Coilcraft CS Series
Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG
Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG
Cap., Chip, 5%, 50V, NPO/COG
Cap., Chip, 10%, 10V, X5R
18 nH
1.5 pF
3.3 pF
22 pF
1.0 uF
0.8 pF
0805CS-180XJLB
06032U1R5BAT2A
06032U3R3BAT2A
AVX
various
various
AVX
Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG
06032U0R8BAT2A
Data Sheet: Rev D 10/04/11
© 2011 TriQuint Semiconductor, Inc.
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
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TQP7M9102
½W High Linearity Amplifier
Typical Performance 2110-2170 MHz
Frequency
MHz
dB
dB
2110
17.9
-12
2140
17.8
-12
2170
17.7
-11
Gain
Input Return Loss
Output Return Loss
dB
-12
-11
-10
Output P1dB
dBm
dBm
dBm
dB
+27.8
+43.6
+18.5
3.8
+27.6
+43.5
+18.4
3.9
+27.4
+43.6
+18.3
4.0
Output IP3 (+9 dBm/tone, ∆f = 1 MHz)
WCDMA Channel Power (at -50 dBc ACLR) [1]
Noise Figure
Supply Voltage, Vcc
Quiescent Collector Current, Icq
V
mA
5
137
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots 2110-2170 MHz
Gain vs. Frequency
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
20
19
18
17
16
15
0
0
-5
−40°
+25°
+85°
C
C
C
−40
+25
+85
°
°
°
C
C
C
-5
−40
+25
+85
°
°
°
C
C
C
-10
-15
-20
-10
-15
-20
2110
2120
2130
2140
2150
2160
2170
2110
2120
2130
2140
2150
2160
2170
2110
2120
2130
2140
2150
2160
2170
2170
12
Freq (MHz)
Freq (MHz)
Freq (MHz)
ACLR Vs. Output Power
OIP3 Vs. Pout/Tone
P1dB vs. Frequency
-35
-40
-45
-50
-55
-60
-65
46
44
42
40
38
30
29
28
27
26
25
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
Freq.= 2140 MHz
Freq.=2140 MHz
1 MHz Tone Spacing
−40°
+25°
+85°
C
C
C
+85
+25
−40
°
°
°
C
C
C
+85
+25
−40
°
°
°
C
C
C
14
15
16
17
18
19
20
7
9
11
13
15
17
2110
2120
2130
2140
2150
2160
Pout (dBm)
Pout/Tone (dBm)
Frequency (MHz)
ACLR Vs. Output Power
OIP3 Vs. Pout/Tone
Output Power vs. Input Power
-35
-40
-45
-50
-55
-60
-65
46
44
42
40
38
29
27
25
23
21
19
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
1 MHz Tone Spacing
°
Temp.=+25 C
Freq.=2140 MHz
°
Temp.=+25 C
−40
+25
+85
°
°
°
C
C
C
2170 MHz
2140 MHz
2110 MHz
2170 MHz
2140 MHz
2110 MHz
14
15
16
17
18
19
20
7
9
11
13
15
17
2
4
6
8
10
Pout (dBm)
Pout/Tone (dBm)
Pin (dBm)
Data Sheet: Rev D 10/04/11
© 2011 TriQuint Semiconductor, Inc.
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
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TQP7M9102
½W High Linearity Amplifier
Pin Configuration and Description
GND
4
1
2
3
RF IN
GND
RF OUT
Pin
Symbol
Description
RF Input. Requires external match for optimal performance. External DC Block
required.
1
RF IN
2, 4
3
GND
RF/DC Ground Connection
RF Output. Requires external match for optimal performance. External DC Block
and supply voltage is required.
RFout / Vcc
Applications Information
PC Board Layout
PCB Material (stackup):
1071363AW REV - 1071363PC REV -
+VCC
1 oz. Cu top layer
0.014 inch Nelco N-4000-13, εr=3.7
1 oz. Cu MIDDLE layer 1
Core Nelco N-4000-13
GND
1 oz. Cu middle layer 2
0.014 inch Nelco N-4000-13
1 oz. Cu bottom layer
Finished board thickness is 0.062±.006
50 ohm line dimensions: width = .031”, spacing = .035”.
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary
from supplier to supplier, careful process development is
recommended.
SOT89 EVAL. BRD., 1/2 WATT
Data Sheet: Rev D 10/04/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
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© 2011 TriQuint Semiconductor, Inc.
TQP7M9102
½W High Linearity Amplifier
Mechanical Information
Package Information and Dimensions
This package is lead-free/RoHS-
compliant. The plating material on the
leads is NiPdAu. It is compatible with
7M9102
both lead-free (maximum 260 °C reflow
temperature) and lead (maximum 245 °C
reflow temperature) soldering processes.
The component will be marked with a
“7M9102”
designator
with
an
alphanumeric lot code on the top surface
of package.
Mounting Configuration
All dimensions are in millimeters (inches). Angles are in degrees.
Notes:
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
3. RF trace width depends upon the PC board material and construction.
4. Use 1 oz. Copper minimum.
Data Sheet: Rev D 10/04/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
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© 2011 TriQuint Semiconductor, Inc.
TQP7M9102
½W High Linearity Amplifier
Product Compliance Information
ESD Information
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: Class 2
Value:
Test:
≥ 2000 V and < 4000 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Standard:
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
ESD Rating: Class IV
Value:
Test:
>2000 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
Standard:
MSL Rating
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com
Email: info-sales@tqs.com
Tel:
Fax:
+1.503.615.9000
+1.503.615.8902
For technical questions and application information:
Email: sjcapplications.engineering@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information
contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is
entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and
verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any
use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other
intellectual property rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Data Sheet: Rev D 10/04/11
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
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© 2011 TriQuint Semiconductor, Inc.
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