TLRE20TP [TOSHIBA]

Panel Circuit Indicator; 面板指示灯电路
TLRE20TP
型号: TLRE20TP
厂家: TOSHIBA    TOSHIBA
描述:

Panel Circuit Indicator
面板指示灯电路

可见光LED 光电
文件: 总8页 (文件大小:271K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TL(RE,RME,SE,OE,YE)20TP(F)  
TOSHIBA LED Lamp  
TLRE20TP(F),TLRME20TP(F),TLSE20TP(F),  
TLOE20TP(F),TLYE20TP(F)  
Unit: mm  
Panel Circuit Indicator  
Lead(Pb)-free products (lead: Sn-Ag-Cu)  
5mm package  
InGaAP technology  
All plastic mold type  
Transparent lens  
High intensity light emission  
Excellent low current light output  
Applications:  
outdoor message signboards, safety equipment, automotive use, etc  
Lineup  
Product Name  
Color  
Material  
TLRE20TP(F)  
TLRME20TP(F)  
TLSE20TP(F)  
TLOE20TP(F)  
TLYE20TP(F)  
Red  
Red  
JEDEC  
JEITA  
InGaAlP  
Red  
Orange  
Yellow  
TOSHIBA  
4-6J1  
Weight: 0.31 g(Typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Operating  
Temperature  
(°C)  
Storage  
Temperature  
(°C)  
Forward Current  
Reverse Voltage  
(V)  
Power Dissipation  
(mW)  
Product Name  
I
(mA)  
V
P
D
F
R
T
T
stg  
opr  
TLRE20TP(F)  
TLRME20TP(F)  
TLSE20TP(F)  
TLOE20TP(F)  
TLYE20TP(F)  
50  
50  
50  
50  
50  
4
120  
120  
120  
120  
120  
4
4
4
4
40~100  
40~120  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-10-01  
TL(RE,RME,SE,OE,YE)20TP(F)  
Electrical and Optical Characteristics (Ta = 25°C)  
Luminous Intensity  
Forward Voltage  
Reverse Current  
Typ. Emission Wavelength  
I
V
I
R
V
F
Product Name  
λ
λ
Δλ  
20  
23  
20  
20  
17  
I
Min  
Typ.  
7000  
8000  
9000  
10000  
9500  
I
Typ.  
1.9  
1.9  
1.9  
2.0  
2.0  
Max  
2.4  
2.4  
2.4  
2.4  
2.4  
I
Max  
50  
V
R
d
P
F
F
F
TLRE20TP(F)  
TLRME20TP(F)  
TLSE20TP(F)  
TLOE20TP(F)  
TLYE20TP(F)  
Unit  
630  
626  
613  
605  
587  
(644)  
(636)  
(623)  
(612)  
(590)  
nm  
20  
20  
20  
20  
20  
mA  
2720  
2720  
2720  
4760  
2720  
20  
20  
20  
20  
20  
mA  
20  
20  
20  
20  
20  
mA  
4
50  
4
4
4
4
V
50  
50  
50  
mcd  
V
μA  
Precautions  
Please be careful of the following:  
Soldering temperature: 260°C max, soldering time: 3 s max  
(soldering portion of lead: up to 1.6 mm from the body of the device)  
If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress  
to the resin. Soldering should be performed after lead forming.  
This visible LED lamp also emits some IR light.  
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.  
2
2007-10-01  
TL(RE,RME,SE,OE,YE)20TP(F)  
TLRE20TP(F)  
I
– V  
I – I  
V F  
F
F
100  
30000  
10000  
Ta = 25°C  
Ta = 25°C  
50  
30  
10  
1000  
5
3
1
1.6  
100  
1.7  
1.8  
1.9  
2.0  
2.1  
2.2  
2.3  
1
3
5
10  
30  
50  
100  
Forward voltage  
V
F
(V)  
Forward current  
I
F
(mA)  
I
Tc  
Relative luminous intensity – Wavelength  
V
3
1.0  
0.8  
0.6  
0.4  
0.2  
0
I
= 20 mA  
F
Ta = 25°C  
1
0.5  
0.3  
0.1  
20  
0
20  
40  
60  
80  
580  
600  
620  
640  
660  
680  
700  
Case temperature Tc (°C)  
Wavelength λ (nm)  
Radiation pattern  
I – Ta  
F
80  
60  
40  
20  
0
Ta = 25°C  
0°  
10°  
10°  
20°  
20°  
30°  
30°  
40°  
40°  
50°  
50°  
60°  
70°  
60°  
70°  
80°  
90°  
80°  
90°  
0.2 0.4 0.6 0.8 1.0  
0
20  
40  
60  
80  
100  
120  
0
Ambient temperature Ta (°C)  
3
2007-10-01  
TL(RE,RME,SE,OE,YE)20TP(F)  
TLRME20TP(F)  
I
– V  
I – I  
V F  
F
F
100  
50000  
10000  
Ta = 25°C  
Ta = 25°C  
50  
30  
10  
1000  
5
3
1
1.6  
100  
1.7  
1.8  
1.9  
2.0  
2.1  
2.2  
2.3  
1
3
5
10  
30  
50  
100  
Forward voltage  
V
F
(V)  
Forward current  
I
F
(mA)  
I
Tc  
Relative luminous intensity – Wavelength  
V
10  
1.0  
I
= 20 mA  
F
Ta = 25°C  
5
3
0.8  
0.6  
0.4  
0.2  
0
1
0.5  
0.3  
0.1  
20  
0
20  
40  
60  
80  
580  
600  
620  
640  
660  
680  
700  
Case temperature Tc (°C)  
Wavelength λ (nm)  
Radiation pattern  
I
Ta  
F
80  
60  
40  
20  
0
Ta = 25°C  
0°  
10°  
10°  
20°  
20°  
30°  
30°  
40°  
40°  
50°  
50°  
60°  
70°  
60°  
70°  
80°  
90°  
80°  
90°  
0.2 0.4 0.6 0.8 1.0  
0
20  
40  
60  
80  
100  
120  
0
Ambient temperature Ta (°C)  
4
2007-10-01  
TL(RE,RME,SE,OE,YE)20TP(F)  
TLSE20TP(F)  
I
– V  
I
V
– I  
F
F
F
100  
50000  
10000  
Ta = 25°C  
Ta = 25°C  
50  
30  
10  
1000  
5
3
1
1.6  
100  
1.7  
1.8  
1.9  
2.0  
2.1  
2.2  
2.3  
1
3
5
10  
30  
50  
100  
Forward voltage  
V
F
(V)  
Forward current  
I
F
(mA)  
I
Tc  
Relative luminous intensity – Wavelength  
V
3
1.0  
0.8  
0.6  
0.4  
0.2  
0
I
= 20 mA  
F
Ta = 25°C  
1
0.5  
0.3  
0.1  
20  
0
20  
40  
60  
80  
580  
600  
620  
640  
660  
680  
700  
Case temperature Tc (°C)  
Wavelength λ (nm)  
Radiation pattern  
I – Ta  
F
80  
Ta = 25°C  
60  
40  
20  
0
0°  
10°  
10°  
20°  
20°  
30°  
30°  
40°  
40°  
50°  
50°  
60°  
70°  
60°  
70°  
80°  
90°  
80°  
90°  
0.2 0.4 0.6 0.8 1.0  
0
20  
40  
60  
80  
100  
120  
0
Ambient temperature Ta (°C)  
5
2007-10-01  
TL(RE,RME,SE,OE,YE)20TP(F)  
TLOE20TP(F)  
I
– V  
I
V
– I  
F
F
F
100  
50000  
10000  
Ta = 25°C  
Ta = 25°C  
50  
30  
10  
1000  
5
3
1
1.6  
100  
1.7  
1.8  
1.9  
2.0  
2.1  
2.2  
2.3  
1
3
5
10  
30  
50  
100  
Forward voltage  
V
F
(V)  
Forward current  
I
F
(mA)  
I
Tc  
Relative luminous intensity – Wavelength  
V
3
1.0  
0.8  
0.6  
0.4  
0.2  
0
I
= 20 mA  
F
Ta = 25°C  
1
0.5  
0.3  
0.1  
20  
0
20  
40  
60  
80  
540  
560  
580  
600  
620  
640  
660  
Case temperature Tc (°C)  
Wavelength λ (nm)  
Radiation pattern  
I
Ta  
F
80  
Ta = 25°C  
60  
40  
20  
0
0°  
10°  
10°  
20°  
20°  
30°  
30°  
40°  
40°  
50°  
50°  
60°  
70°  
60°  
70°  
80°  
90°  
80°  
90°  
0.2 0.4 0.6 0.8 1.0  
0
20  
40  
60  
80  
100  
120  
0
Ambient temperature Ta (°C)  
6
2007-10-01  
TL(RE,RME,SE,OE,YE)20TP(F)  
TLYE20TP(F)  
I
– V  
I
V
– I  
F
F
F
100  
50000  
10000  
Ta = 25°C  
Ta = 25°C  
50  
30  
10  
1000  
5
3
1
1.6  
100  
1.7  
1.8  
1.9  
2.0  
2.1  
2.2  
2.3  
1
3
5
10  
30  
50  
100  
Forward voltage  
V
F
(V)  
Forward current  
I
F
(mA)  
I
Tc  
Relative luminous intensity – Wavelength  
V
3
1.0  
0.8  
0.6  
0.4  
0.2  
0
I
= 20 mA  
F
Ta = 25°C  
1
0.5  
0.3  
0.1  
20  
0
20  
40  
60  
80  
540  
560  
580  
600  
620  
640  
660  
Case temperature Tc (°C)  
Wavelength λ (nm)  
Radiation pattern  
I – Ta  
F
80  
Ta = 25°C  
60  
40  
20  
0
0°  
10°  
10°  
20°  
20°  
30°  
30°  
40°  
40°  
50°  
50°  
60°  
70°  
60°  
70°  
80°  
90°  
80°  
90°  
0.2 0.4 0.6 0.8 1.0  
0
20  
40  
60  
80  
100  
120  
0
Ambient temperature Ta (°C)  
7
2007-10-01  
TL(RE,RME,SE,OE,YE)20TP(F)  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,  
cut, crush or dissolve chemically.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
8
2007-10-01  

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