TLP801AF [TOSHIBA]

INFRARED LED + PHOTOTRANSISTOR; 红外LED +光电晶体管
TLP801AF
型号: TLP801AF
厂家: TOSHIBA    TOSHIBA
描述:

INFRARED LED + PHOTOTRANSISTOR
红外LED +光电晶体管

晶体 光电 晶体管 光电晶体管
文件: 总9页 (文件大小:249K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLP801A(F)  
TOSHIBA PhotoInterrupter Infrared LED+Phototransistor  
TLP801A(F)  
Lead Free Product  
Optical Switches  
Position And Rotation Detection  
Timing Detection In Copiers, Printers,  
Fax Machines, Etc.  
The TLP801A(F) photointerrupter can be used for  
high-speed position detection.  
Gap: 3mm  
Resolution: Slit width = 1mm  
Fast response speed: t , t = 6µs(typ.)  
r
f
High current transfer ratio: I / I = 10%(min)  
C
F
Designed for direct mounting on printed circuit  
boards  
Package material: Polycarbonate  
TOSHIBA  
1113D2  
Weight: 0.78g(typ.)  
Maximum Ratings  
(Ta = 25°C)  
Characteristic  
Forward current  
Symbol  
Rating  
Unit  
mA  
I
50  
F
Forward current derating  
(Ta > 25°C)  
I / °C  
F
0.33  
mA / °C  
Reverse voltage  
V
5
30  
5
V
V
R
Collector-emitter voltage  
Emitter-collector voltage  
Collector power dissipation  
V
CEO  
ECO  
V
V
P
75  
mW  
C
Collector power dissipation  
derating(Ta > 25°C)  
P / °C  
1  
mW / °C  
C
I
50  
mA  
°C  
Collector current  
C
Operating temperature range  
Storage temperature range  
T
25~85  
40~100  
opr  
T
stg  
°C  
1
2004-02-12  
TLP801A(F)  
Markings  
Product number  
Monthly lot number  
Month of manufacture  
(January to December denoted by letters A to L respectively)  
Year of manufacture  
Letter color: Silver  
last digit of year of manufacture)  
Optical And Electrical Characteristics(Ta = 25°C)  
Characteristic  
Forward voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 10mA  
F
1.00  
1.15  
1.30  
10  
V
F
Reverse current  
I
R
V
= 5V  
µA  
nm  
R
Peak emission wavelength  
λ
I
= 20mA  
940  
P
F
Dark current  
I (I  
D
)
V
CE  
= 24V, I = 0  
0.1  
µA  
CEO  
F
Peak sensitivity wavelength  
Current transfer ratio  
λ
10  
820  
165  
0.4  
nm  
%
P
I
I
V
I
= 5V, I = 20mA  
F
C / F  
CE  
Collectoremitter saturation  
voltage  
V
= 20mA, I = 1mA  
0.15  
V
CE(sat)  
F
C
Rise time  
Fall time  
t
6
6
r
V
= 5V, I = 2mA,  
C
CC  
L
µs  
R = 100Ω  
t
f
2
2004-02-12  
TLP801A(F)  
Precautions  
The following points must be borne in mind.  
1. Soldering temperature: 260°C max  
Soldering time: 5s max  
(Soldering must be performed 1.5mm under the package body.)  
2. Clean only the soldered part of the leads. Do not immerse the entire package in the cleaning solvent.  
3. Mount the device on a level surface.  
4. Screws should be tightened to a clamping torque of 0.59 Nm.  
5. The package is made of polycarbonate. Polycarbonate is usually stable with acid, alcohol and aliphatic  
hydrocarbons, however, with petrochemicals (such as benzene, toluene and acetone), alkalis, aromatic  
hydrocarbons, or chloric hydrocarbons, polycarbonate may crack, swell or melt.  
Please take this into account when choosing a packaging material by referring to the table below.  
<Chemicals Which Should Not Be Used With Polycarbonate>  
Phenomenon  
Chemicals  
Staining and slight  
deterioration  
A
B
Nitric acid (diluted), hydrogen peroxide, chlorine  
Acetic acid (70% or more)  
Gasoline  
Methyl ethyl ketone, ethyl acetate, butyl acetate  
Ethyl methacrylate, ethyl ether, MEK  
Acetone, mamino alcohol, carbon tetrachloride  
Carbon disulfide, trichloroethylene, cresol  
Thinners,oil of turpentine  
Cracking, crazed or  
swelling  
Triethanolamine, TCP, TBP  
Concentrated sulfuric acid  
Benzene  
Melting  
Styrene, acrylonitrile, vinyl acetate  
Ethylenediamine, diethylenediamine  
(Chloroform, methyl chloride, tetrachloromethane,dioxane,  
1, 2dichloroethane)  
C
D
(
): Used as solvent  
Ammonia water  
Other alkalis  
Decomposition  
6. Conversion efficiency falls over time due to current which flows in the infrared LED.  
When designing a circuit, take into account this change in conversion efficiency over time.  
The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1 : 1.  
IC / IF (t) PO (t)  
=
IC /IF (0) PO (0)  
3
2004-02-12  
TLP801A(F)  
Package Dimensions  
Weight: 0.78g(typ.)  
Pin Connection  
1
4
3
2
1. Anode  
2. Cathode  
3. Collector  
4. Emitter  
4
2004-02-12  
TLP801A(F)  
I
Ta  
P – Ta  
C
F
80  
60  
40  
80  
60  
40  
20  
0
20  
0
20  
Ambient temperature Ta (°C)  
0
40  
60  
80  
100  
0
20  
80  
100  
40  
60  
Ambient temperature Ta (°C)  
I
– V  
(typ.)  
I
– I  
F
(typ.)  
F
F
C
20  
10  
100  
Ta = 25°C  
50  
30  
V
CE  
= 5V  
5
3
0.4  
10  
1
Ta = 75°C  
50  
5
3
25  
0
0.5  
0.3  
25  
1
0.8  
0.1  
100  
1
3
10  
Forward current  
30  
1.1  
Forward voltage  
0.9  
1.0  
1.2  
1.3  
1.4  
I
(mA)  
V
(V)  
F
F
I
/ I – I  
(typ.)  
I
– V  
CE  
(typ.)  
C
F
F
C
16  
100  
Ta = 25°C  
Ta = 25°C  
36  
14  
12  
10  
8
50  
30  
32  
V
CE  
= 5V  
28  
0.4  
24  
P
C
max  
20  
10  
16  
6
12  
5
3
4
8
1
3
Forward current  
I
F
= 4mA  
10  
30  
100  
2
0
I
F
(mA)  
0
2
4
6
8
10  
12  
14  
(V)  
16  
Collector-emitter voltage  
V
CE  
5
2004-02-12  
TLP801A(F)  
I
– V  
(typ.)  
Relative I Ta  
C
(tyg.)  
C
CE  
24  
20  
16  
12  
8
1.6  
1.4  
1.2  
1.0  
0.8  
Ta=25°C  
I
F
= 20mA  
P
C
max  
50  
45  
40  
V
CE  
= 0.4V  
5
35  
30  
25  
20  
0.6  
0.4  
0.2  
0
15  
10  
4
0
I
= 5mA  
F
0
1
2
3
4
5
0
20  
40  
60  
80  
100  
- 20  
- 40  
Collector-emitter voltage  
V
(V)  
Ambient temperature Ta (°C)  
CE  
I
(I  
CEO  
) – Ta  
(typ.)  
V – Ta  
CE(sat)  
(typ.)  
D
10  
0.32  
0.28  
0.24  
0.20  
0.16  
0.12  
I
= 20mA  
F
I
C
= 1mA  
1
V
CE  
= 24V  
10  
5
10 - 1  
0.08  
0.04  
0
10 - 2  
40  
20  
0
20  
40  
60  
80  
100  
10 - 3  
Ambient temperature Ta (°C)  
10 - 4  
0
20  
100  
40  
60  
80  
Ambient temperature Ta (°C)  
6
2004-02-12  
TLP801A(F)  
Switching characteristics  
non saturated operation) (typ.)  
Switching characteristics  
saturated operation)  
typ.)  
1000  
500  
Ta = 25°C  
V
CC  
= 5V  
Repetitive  
I
F
500  
300  
Frequency = 1kHz  
Duty = 1 / 2  
V
OUT  
4.6V  
R
L
300  
100  
t
f
V
= 5V  
CC  
I
F
V
OUT  
= 3V  
R
L
100  
t
s
I
t ,  
F
r
V
OUT  
3V  
0V  
t
f
90%  
10%  
50  
30  
50  
30  
I
F
90%  
10%  
t
d
r
t
V
s
OUT  
0V  
t
t
f
t
t
d
s
t
f
t
r
t
r
10  
10  
t
d
5
3
5
3
t
d
t
s
1
1
1
0.1  
3
10  
30  
(k)  
100  
1
3
10  
0.3  
Load resistance  
R
(k)  
Load resistance  
R
L
L
Detection position  
Characteristics (1) typ.)  
Detection position  
Characteristics (2) typ.)  
1.0  
1.0  
I
= 20mA  
= 5V  
I
= 20mA  
= 5V  
F
Shutter  
F
0
d
+
V
V
CE  
CE  
0.8  
0.6  
0.4  
0.8  
0.6  
0.4  
Shut  
-ter  
Ta = 25°C  
Ta = 25°C  
d
0.2  
0
0.2  
0
4
5
6
7
8
9
10  
11  
3  
1
3
4
2  
1  
0
2
Distance  
d
(mm)  
Distance  
d
(mm)  
7
2004-02-12  
TLP801A(F)  
Relative Positioning Of Shutter And Device  
For normal operation position the shutter and the device as shown in the figure below. By considering the device’s  
detection direction characteristic and switching time, determine the shutter slit width and pitch.  
A
Shutter  
A′  
Unit in mm  
Center of sensor  
Cross section between A and A’  
8
2004-02-12  
TLP801A(F)  
RESTRICTIONS ON PRODUCT USE  
030619EAC  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,  
cut, crush or dissolve chemically.  
9
2004-02-12  

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