TLP531(BL) [TOSHIBA]
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| 型号： | TLP531(BL) |
| 厂家： | 
TOSHIBA |
| 描述： | 暂无描述 光电 继电器 固态继电器 输出元件 控制器 |
| 文件： | 总9页 (文件大小：818K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP531,TLP532
TOSHIBA Photocoupler GaAs IRed & Photo−Transistor
TLP531,TLP532
Programmable Controllers
AC / DC−Input Module
Unit in mm
Solid State Relay
The TOSHIBA TLP531 and TLP532 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
TLP532 is no−base internal connection for high−EMI environments.
·
·
Collector−emitter voltage: 55 V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
·
·
Isolation voltage: 2500 V
(min.)
UL recognized: UL1577, file no. E67349
rms
Pin Configurations (top view)
TOSHIBA
Weight: 0.4g
11−7A8
1
2002-09-25
TLP531,TLP532
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
70
0.93
1
mA
F
Forward current derating (Ta ≥ 50°C)
Peak forward current (100 µs pulse, 100pps)
Reverse voltage
∆I / °C
F
mA / °C
I
A
FP
V
5
V
°C
R
Junction temperature
T
125
55
j
Collector-emitter voltage
V
V
CEO
CBO
ECO
EBO
Collector-base voltage (TLP531)
Emitter-collector voltage
V
V
V
80
V
7
V
Emitter-base voltage (TLP531)
Collector current
7
V
I
50
mA
mW
mW / °C
°C
C
Power dissipation
P
150
-1.5
125
-55~125
-55~100
260
250
-2.5
2500
C
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
∆P / °C
C
T
j
Storage temperature range
T
°C
stg
opr
Operating temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating (Ta ≥ 25°C)
Isolation voltage (AC, 1min., R.H.≤ 60%)
T
°C
T
°C
sol
P
mW
mW / °C
T
∆P / °C
T
BV
V
rms
S
Recommends Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Forward current
Collector current
V
―
―
5
16
1
24
25
10
85
V
CC
I
mA
mA
°C
F
I
―
C
Operating temperature
T
-25
―
opr
2
2002-09-25
TLP531,TLP532
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
I
= 10mA
F
1.0
―
1.15
―
1.3
10
―
V
F
Reverse current
Capacitance
I
V
= 5V
R
µA
pF
R
C
T
V = 0, f = 1MHz
―
30
Collector-emitter
V
V
V
V
I
I
I
I
= 0.5mA
= 0.1mA
= 0.1mA
= 0.1mA
55
7
―
―
―
―
―
―
―
―
V
V
V
V
(BR) CEO
(BR) ECO
(BR) CBO
(BR) EBO
C
E
C
E
breakdown voltage
Emitter-collector
breakdown voltage
Collector-base
80
7
breakdown voltage
(TLP531)
(TLP531)
Emitter-base
breakdown voltage
V
V
= 24V
―
―
―
10
2
100
50
nA
µA
pF
CE
CE
Collector dark current
I
CEO
= 24V, Ta = 85°C
Capacitance (collector to emitter)
C
V = 0, f = 1MHz
10
―
CE
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 5mA, V = 5V
Min.
Typ.
Max.
Unit
%
50
50
200
―
600
150
300
300
600
600
I
I
F
CE
Rank Y
Rank YG
Rank GR
Rank GB
Rank BL
50
―
Current transfer ratio
I / I
C F
100
100
200
―
―
―
Collector-emitter
V
= 2.4mA, I = 8mA
F
―
―
0.4
V
CE (sat)
C
saturation voltage
3
2002-09-25
TLP531,TLP532
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 0, f = 1MHz
Min.
Typ.
0.8
Max.
Unit
Capacitance
C
R
V
V
―
―
pF
S
S
S
(input to output)
Isolation resistance
Isolation voltage
= 500V, R.H.≤ 60%
5 ´ 1010
1014
―
―
Ω
S
BV
AC, 1 minute
2500
―
V
rms
S
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
µs
Rise time
t
―
―
―
―
―
―
―
―
―
―
2
3
―
―
―
―
―
―
―
―
―
―
r
V
= 10V
CC
Fall time
t
f
I
= 2mA
C
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Turn-on time
Storage time
Turn-off time
t
3
R = 100Ω
ON
L
t
t
t
3
OFF
t
2
ON
R = 1.9kΩ
(Fig.1)
(Fig.1)
L
BE
CC
R
= open
µs
µs
t
15
25
2
s
V
= 5V, I = 16mA
F
OFF
t
ON
R = 1.9Ω
L
BE
CC
R
= 220kΩ (TLP531)
t
12
20
s
V
= 5V, I = 16mA
F
OFF
Fig. 1
Switching time test circui
4
2002-09-25
TLP531,TLP532
5
2002-09-25
TLP531,TLP532
6
2002-09-25
TLP531,TLP532
7
2002-09-25
TLP531,TLP532
8
2002-09-25
TLP531,TLP532
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
9
2002-09-25
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