TLP3064S [TOSHIBA]
GaAlAs IRED & PHOTO-TRIAC; 的GaAlAs IRED ＆ PHOTO- TRIAC
| 型号： | TLP3064S |
| 厂家： | 
TOSHIBA |
| 描述： | GaAlAs IRED & PHOTO-TRIAC |
| 文件： | 总6页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP3064(S)
TOSHIBA PHOTOCOUPLER GaAlAs IRED & PHOTO-TRIAC
TLP3064(S)
OFFICE MACHINE
HOUSEHOLD USE EQUIPMENT
TRIAC DRIVER
Unit: in mm
SOLID STATE RELAY
The TOSHIBA TLP3064(S) consists of a zero voltage crossing turn-on
photo-triac optically coupled to a GaAlAs infrared emitting diode in a six
lead plastic DIP package.
•
•
•
•
•
•
Peak Off-State Voltage
Trigger LED Current
On-State Current
Isolation Voltage
: 600V(Min)
: 3mA(Max)
: 100mA(Max)
: 5000Vrms(Min)
UL Recognized
: UL1577,File No.E67349
: SS EN60065
SEMKO Approved
SS EN60950, File No.9841113
: BS EN60065, File No.8385
BS EN60950, File No.8386
•
•
BSI Approved
JEDEC
TOSHIBA
11-7A9
Option (D4) type
Weight: 0.39 g
VDE approved: DIN EN60747-5-2
Approved No. 40009302
Pin Configuration
(top view)
Maximum operating insulation voltage: 890VPK
Highest permissible over voltage: 8000VPK
1
2
3
6
(Note):When a EN60747-5-2 approved type is needed,
please designate the "Option (D4)"
Construction Mechanical Rating
ZC
4
7.62 mm pich
Standard Type
10.16 mm pich
TLPxxxxF Type
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (Min)
7.0 mm (Min)
0.5 mm (Min)
8.0 mm (Min)
8.0 mm (Min)
0.5 mm (Min)
1: Anode
2: Cathode
3: N.C.
4:Terminal 1
6:Terminal 2
ZC:Zero-cross Circuit
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2007-10-01
TLP3064(S)
Absolute Maximum Ratings (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Forward Current
I
30
−0.3
1
mA
F
Forward Current Derating (Ta≥25°C)
Peak Forward Current (100μs pulse, 100pps)
Reverse Voltage
∆I /°C
F
mA /°C
I
A
V
FP
V
5
R
Junction Temperature
Tj
125
600
°C
V
Off-State Output Terminal Voltage
VDRM
Ta=25°C
Ta=70°C
100
50
On-State RMS Current
IT(RMS)
mA
On-State Current Derating (Ta≥25°C)
∆IT/°C
ITP
-1.1
2
mA /°C
Peak On-State Current (100μs pulse, 120pps)
Peak Nonrepetitive Surge Current (Pw=10ms,DC=10%)
A
A
ITSM
1.2
°C
°C
°C
°C
Junction Temperature
T
115
−55~150
−40~100
260
j
Storage Temperature Range
T
stg
opr
Operating Temperature Range
Lead Soldering Temperature (10s)
Isolation Voltage (AC,1min. , R.H.≤60%)
T
T
sol
(Note 2)
BV
5000
Vrms
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 2) Device considered a two terminal device:Pins1, 2 and 3 shorted together and pin 4 and pin 6 shorted
together.
Recommended Operating Conditions
CHARACTERISTIC
Supply Voltage
SYMBOL
MIN.
TYP.
MAX.
UNIT
—
4.5
—
—
6
VAC
IF
240
7.5
1
Vac
mA
A
Forward Current
—
—
Peak On-State Current
Operating Temperature
ITP
Topr
−10
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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TLP3064(S)
Individual Electrical Characteristics (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
= 10 mA
F
MIN.
TYP.
MAX.
UNIT
Forward Voltage
Reverse Current
Capacitance
V
I
1.2
—
—
—
—
—
1.4
—
30
10
—
1.7
10
V
μA
pF
nA
V
F
I
R
V = 3 V
R
CT
V = 0, f=1MHz
VDRM=600V
ITM=100mA
—
Peak Off-State Current
Peak On-State Voltage
Holding Current
I
1000
3.0
—
DRM
VTM
IH
—
0.6
mA
Critical Rate of Rise of
Off-State Voltage
dv/dt
Vin=240Vrms , Ta=85°C
Vin=60Vrms, IT=15mA
(Fig.1)
(Fig.1)
500
0.2
V/μs
V/μs
200
—
—
—
Critical Rate of Rise of
Commutating Voltage
dv/dt(c)
Coupled Electrical Characteristics (Ta=25°C)
CHARACTERISTIC
Trigger LED Current
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
—
—
—
—
IFT
VIH
IIH
VT=6V ,Resistive Load
IF=Rated IFT
—
—
3
50
600
—
mA
V
Inhibit Voltage
—
Leakage in Inhibited State
Capacitance (Input to Output)
Isolation Resistance
IF=Rated IFT , VT=Rated VDRM
VS=0 , f=1MHz
μA
pF
Ω
CS
RS
0.8
1×1012
5000
—
1014
—
—
VS=500V ,R.H.≤60%
AC , 1minute
—
Vrms
Vdc
—
Isolation Voltage
BVS
AC , 1second,in oil
DC , 1minute,in oil
10000
10000
—
—
Fig. 1
dv / dt test circuit
+
＋5V,V
CC
R
in
V
in
6
4
1
2
3
V
CC
120Ω
0V
dv / dt（c） dv / dt
～
R
L
−
4kΩ
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TLP3064(S)
4
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TLP3064(S)
5
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TLP3064(S)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-10-01
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