TLP227G-2(N) [TOSHIBA]
Solid State Relay, DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 2500 V ISOLATION-MAX, PLASTIC, 11-10C4, DIP-8;型号: | TLP227G-2(N) |
厂家: | TOSHIBA |
描述: | Solid State Relay, DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 2500 V ISOLATION-MAX, PLASTIC, 11-10C4, DIP-8 光电 继电器 固态继电器 输出元件 |
文件: | 总6页 (文件大小:218K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLP227G,TLP227G−2
TOSHIBA Photocoupler Photo Relay
TLP227G,TLP227G−2
Cordless Telephone
Unit in mm
PBX
Modem
The TOSHIBA TLP227G series consist of a gallium arsenide infrared
emitting diode optically coupled to a photo−MOS FET in a plastic
DIP package.
The TLP227G series are a bi−directional switch which can replace
mechanical relays in many applications.
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TLP227G: 4 pin DIP(DIP4),1 channel type(1 form A)
TLP227G−2: 8 pin DIP(DIP8),2 channel type(2 form A)
Peak off−state voltage: 350V(min.)
Trigger LED current: 3mA(max.)
On−state current: 120mA(max.)
On−state resistance: 35Ω(max.)
TOSHIBA
11−5B2
Isolation voltage: 2500Vrms (min.)
Isolation thickness: 0.4mm(min.)
Weight: 0.26g
1 Form A
4
3
BSI approved: BS EN60065: 2002, certificate no.8275
BS EN60950-1: 2002, certificate no.8276
Option(D4) type
•
TUV approved: DIN EN 60747-5-2,
certificate no. 40011913
1
2
Pin Configuration (top view)
TLP227G-2
TLP227G
1
2
3
4
8
7
6
5
1
2
4
3
1, 3: Anode
2, 4: Cathode
5: Drain 1
6: Drain 2
7: Drain 3
8: Drain 4
1: Anode
2: Cathode
3: Drain 1
4: Drain 2
TOSHIBA
11−10C4
Weight: 0.54g
2 Form A
8
1
5
4
1
2007-10-01
TLP227G,TLP227G−2
Internal Circuit
(TLP227G)
1
4
3
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
50
−0.5
1
mA
F
Forward current derating(Ta ≥ 25°C)
Peak forward current(100μs pulse, 100pps)
Reverse voltage
ΔI / °C
F
mA / °C
I
A
V
FP
V
5
R
Junction temperature
T
125
°C
V
j
Off-state output terminal voltage
TLP227G
V
350
OFF
120
On-state current
I
mA
One channel
120
ON
TLP227G−2
TLP227G
Both channel (Note 1)
100
−1.2
−1.2
−1.0
125
On-state current
derating(Ta ≥ 25°C)
ΔI
ON
/ °C
mA / °C
One channel
TLP227G−2
Both channel
(Note 1)
(Note 2)
Junction temperature
Storage temperature range
Operating temperature range
T
°C
°C
°C
°C
j
T
−55~125
−40~85
260
stg
T
opr
Lead soldering temperature (10 s)
T
sol
Isolation voltage (AC,1 min., R.H.≤ 60%)
BV
2500
V
S
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1): Two channels operating simultaneously.
(Note 2): Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Forward current
On-state current
V
―
5
―
7.5
―
280
25
V
DD
I
mA
mA
°C
F
I
―
100
65
ON
Operating temperature
T
opr
−20
―
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP227G,TLP227G−2
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
I =10mA
1.0
―
―
―
1.15
―
1.3
10
―
1
V
F
F
Reverse current
Capacitance
I
V =5V
R
μA
pF
μA
R
C
V=0,f=1MHz
350V
30
T
Off−state current
I
V
—
OFF
OFF=
Capacitance
C
V=0,f=1MHz
―
40
―
pF
OFF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Symbol
Test Condition
=120mA
Min.
Typ.
Max.
Unit
mA
I
I
I
I
―
―
2
3
FT
ON
ON
ON
=120mA,I =5mA
F
22
35
On−state resistance
R
Ω
=20~120mA,
ON
―
26
40
I =5mA
F
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
Isolation resistance
C
R
V =0,=1MHz
S
―
5×1010
2500
―
0.8
1014
―
―
―
―
―
―
pF
S
S
V =500V,R.H.≤ 60%
S
Ω
AC,1 minute
V
rms
Isolation voltage
BV
S
AC,1 second(in oil)
DC,1 minute(in oil)
5000
5000
―
V
dc
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
ms
Turn−on time
Turn−off time
t
R =200Ω
―
―
0.3
0.1
1
1
ON
L
V
=20V,I =5mA
DD
t
F
OFF
Switching Time Test Circuit
TLP227G
V
V
I
DD
F
R
L
1
2
4
3
I
F
OUT
90%
V
OUT
10%
t
t
OFF
ON
3
2007-10-01
TLP227G,TLP227G−2
I
– Ta
I
– Ta
ON
F
100
80
140
120
100
80
60
60
40
40
20
0
20
0
80
100
0
20
100
120
-20
40
60
0
20
40
60
-20
80
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
– D
I –V
F F
FP
R
5000
3000
100
Pulse width ≤ 100μs
Ta = 25°C
Ta = 25°C
50
30
1000
10
500
300
5
3
100
1
50
30
0.5
0.3
10
3
0.1
0.6
0
1
3
2
-
-
-
0.8
1.2
1.8
1.4
1.6
10
1.0
3
3
10
R
10
10
3
Duty cycle ratio
D
Forward voltage
V
(V)
F
ΔV / ΔTa – I
I – V
FP FP
F
F
1000
-2.8
-2.4
-2.0
-1.6
-1.2
500
300
100
50
30
10
Pulse width ≤ 10μs
Repetitive
5
3
-0.8
-0.4
frequency = 100Hz
Ta = 25°C
1
0.6
10
30 50
3.0
0.1
3
5
1.8
2.2
2.6
0.3 0.5
1
1.0
1.4
Forward current
I
F
(mA)
Pulse forward voltage
V
(V)
FP
4
2007-10-01
TLP227G,TLP227G−2
I
– Ta
I
– V
ON
FT
ON
3.0
2.5
2.0
1.5
1.0
200
100
Ta = 25°C
= 5mA
I
= Rated
ON
I
F
0
-100
-200
0.5
0
-4
0
2
4
-2
-20
20
0
40
60
80
100
Ambient temperature Ta (°C)
On-state voltage
V
ON
(V)
R
ON
– Ta
I
– Ta
OFF
60
1000
V
= 350V
I
I
= Rated
OFF
ON
500
300
= 5mA
F
50
40
30
20
10
0
100
50
30
10
5
3
1
-20
80
100
-20
20
40
60
0
40
60
80
100
0
20
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
5
2007-10-01
TLP227G,TLP227G−2
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-10-01
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TOSHIBA
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