TLP190B_07 [TOSHIBA]
Photocoupler GaAГAs Ired & Photo−Diode Array; 光电耦合器GaAГAs IRED与光电二极管阵列
| 型号： | TLP190B_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Photocoupler GaAГAs Ired & Photo−Diode Array |
| 文件： | 总5页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP190B
TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array
TLP190B
Telecommunication
Unit in mm
Programmable Controllers
MOS Gate Driver
MOS FET Gate Driver
The TOSHIBA mini flat coupler TLP190B is a small outline coupler,
suitable for surface mount assembly.
The TLP190B consists of a GaAℓAs light emitting diode, optically
coupled to a series connected photo diode array which is suitable for
MOS FET gate drive.
•
•
•
•
Open voltage: 7.0V (min.)
Short current: 12.0μA (min.)
Isolation voltage: 2500Vrms (min.)
UL recognized: UL1577, file no. E67349
TOSHIBA
11−4C1
Weight: 0.09 g
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
50
Unit
mA
Pin Configuration (top view)
Forward current
I
F
6
1
Forward current
derating (Ta ≥ 25°C)
ΔI / °C
F
−0.5
mA / °C
LED
Pulse forward current
(100μs pulse 100pps)
I
1
A
FP
3
4
Reverse voltage
V
3
125
V
R
Junction temperature
Forward current
T
°C
μA
V
j
1. Anode
I
50
FD
3. Cathode
4. Cathode
6. Anode
Detector
Reverse voltage
V
10
RD
Junction temperature
T
125
°C
°C
°C
°C
j
Storage temperature range
T
−55~125
−40~85
260
stg
opr
Operating temperature range
Lead soldering temperature (10 s)
T
T
sol
BV
Isolation voltage
(AC, 1 min., R.H. ≤ 60%)
2500
Vrms
S
(Note)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together.
1
2007-10-01
TLP190B
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Forward current
Operating temperature
I
―
20
25
85
mA
°C
F
T
opr
−25
―
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 10 mA
F
Min.
Typ.
Max.
Unit
Forward voltage
Reverse current
Capacitance
V
I
1.2
—
—
―
―
1.4
—
30
7
1.7
10
60
—
V
μA
pF
V
F
I
V = 3 V
R
R
LED
C
V = 0, f = 1 MHz
= 10 μA
T
Forward voltage
Reverse current
V
I
C
FD
RD
I
V
= 10 V
1
—
nA
R
Detector
Capacitance
(anode to cathode)
C
TD
V = 0, f = 1 MHz
—
―
—
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
MIn.
Typ.
Max.
Unit
Open voltage
Short current
V
I
I
= 10 mA
= 10 mA
7
8
—
—
V
OC
F
F
I
12
20
μA
SC
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
Isolation resistance
C
R
V
V
= 0, f = 1 MHz
—
5×1010
2500
—
0.8
1014
—
—
—
—
—
—
pF
S
S
S
S
= 500 V, R.H. ≤ 60%
Ω
AC, 1 minute
Vrms
Vdc
Isolation voltage
BV
S
AC, 1 second in oil
DC, 1 minute in oil
5000
5000
—
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Turn−on time
Turn−off time
t
—
—
0.2
1
—
—
ms
ms
ON
I
= 20 mA, R
SH
L
= 510 kΩ
F
C = 1000pF
(Fig. 1)
t
OFF
Fig. 1 Switching time test circuit
I
V
F
OUT
I
F
C
L
R
SH
V
5V
OUT
1V
0V
t
t
ON
OFF
R
SH :
External shunt resistance
2
2007-10-01
TLP190B
I
F
– Ta
ΔV /ΔTa – I
F
F
100
−4.0
−3.6
−3.2
−2.8
80
60
40
−2.4
−2.0
−1.6
−1.2
−0.8
20
0
1
20
60
0.1
0.3
0.5
3
30
10
0
40
80
100
−20
Ambient temperature Ta (°C)
Forward current
I
(mA)
F
I
– V
I
– D
R
F
F
FP
100
5000
3000
Pulse width ≤ 100μs
Ta = 25 °C
Ta = 25 °C
50
30
1000
500
300
10
100
5
3
50
30
10
1
1.0
3
2
1
−
0
−
−
1.6
1.8
1.4
2.0
2.2
1.2
3
10
3
10
3
10
3
10
Forward voltage
V
F
(V)
Duty cycle ratio
D
R
3
2007-10-01
TLP190B
t
t
– C
I
O
– V
O
ON, OFF L
100
Ta = 25 °C
R
=2.4MΩ
SH
t
t
OFF
ON
40
20
30
10
1MΩ
510kΩ
300kΩ
Ta = 25 °C
I
= 20 mA
F
3
1
I
=0mA
F
I
=20mA
F
V
0
OUT
5mA
R
SH
C
L
10mA
0.3
0.1
−20
I
F
15mA
20mA
300kΩ
510kΩ
1MΩ
V
4
OUT
0V
5V
−40
−60
1V
0.03
0.01
25mA
2.4MΩ
t
t
OFF
ON
2
3
0
6
10
2
8
4
10
300
10
3000 10
Load capacitance
C
L
( F)
P
Output voltage
V
O
(V)
V
– I
F
I
– I
F
OC
SC
10
100
R
SH
OPEN
50
30
8
6
4
1MΩ
10
510kΩ
3
1
300kΩ
0.5
0.3
2
0
Ta = 25 °C
Ta = 25 °C
R
=2.4MΩ
SH
0.1
1
1
100
3
5
10
30
50
100
3
5
10
30
50
Forward current
I
(mA)
Forward current
I
(mA)
F
F
V
– Ta
I
– Ta
SC
OC
12
10
8
24
20
16
6
4
12
8
2
0
4
0
I
= 10mA
I = 10mA
F
F
20
40
120
20
40
120
−20
60
80
100
−20
60
80
100
0
0
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
4
2007-10-01
TLP190B
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-10-01
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