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TIM7785-35SL [TOSHIBA]

MICROWAVE POWER GaAs FET; 微波功率GaAs FET
TIM7785-35SL
元器件型号： TIM7785-35SL
生产厂家： TOSHIBA SEMICONDUCTOR    TOSHIBA SEMICONDUCTOR
描述和应用：

MICROWAVE POWER GaAs FET
微波功率GaAs FET

微波
PDF文件： 总5页 (文件大小：180K)
下载文档：  下载PDF数据表文档文件
型号参数：TIM7785-35SL参数
 查看货源

TIM7785-35SL_06

 MICROWAVE POWER GaAs FET

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19 TOSHIBA

TIM7785-45SL

 MICROWAVE POWER GaAs FET

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39 TOSHIBA

TIM7785-4SL

 TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power

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0 TOSHIBA

TIM7785-4UL

 MICROWAVE POWER GaAs FET

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44 TOSHIBA

TIM7785-4UL_09

 HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz

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15 TOSHIBA

TIM7785-60SL

 MICROWAVE POWER GaAs FET

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69 TOSHIBA

TIM7785-60SL_08

 IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level

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27 TOSHIBA

TIM7785-60UL

 TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA05A, 2 PIN, FET RF Power

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1 TOSHIBA

TIM7785-6UL

 MICROWAVE POWER GaAs FET

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27 TOSHIBA

TIM7785-6UL_09

 HIGH POWER P1dB=38.5dBm at 7.7GHz to 8.5GHz

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16 TOSHIBA

TIM7785-8L

 TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power

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1 TOSHIBA

TIM7785-8SL

 MICROWAVE POWER GaAs FET

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20 TOSHIBA

TIM7785-8UL

 MICROWAVE POWER GaAs FET

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34 TOSHIBA

TIM7785-8UL_06

 HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz

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9 TOSHIBA

TIM7984-14L

 TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power

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0 TOSHIBA
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