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TIM5964-45SL_06 [TOSHIBA]

MICROWAVE POWER GaAs FET; 微波功率GaAs FET

TIM5964-45SL_06


元器件型号：	TIM5964-45SL_06
生产厂家：	TOSHIBA SEMICONDUCTOR
描述和应用：	MICROWAVE POWER GaAs FET 微波功率GaAs FET 微波
PDF文件：	总4页 (文件大小：473K)
下载文档：	下载PDF数据表文档文件
型号参数：TIM5964-45SL_06参数

TIM5964-4A

MICROWAVE POWER GAAS FET

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34 TOSHIBA

TIM5964-4A

MICROWAVE POWER GAAS FET

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17 TOSHIBA

TIM5964-4SL-422

TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power

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0 TOSHIBA

TIM5964-4UL

MICROWAVE POWER GaAs FET

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39 TOSHIBA

TIM5964-4UL_09

HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz

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8 TOSHIBA

TIM5964-60SL

MICROWAVE POWER GaAs FET

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97 TOSHIBA

TIM5964-60SL_08

IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level

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23 TOSHIBA

TIM5964-60SL-251

TRANSISTOR C BAND, Si, N-CHANNEL, RF POWER, JFET, 2-16G1B, 2 PIN, FET RF Power

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0 TOSHIBA

TIM5964-60SL-422

TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power

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0 TOSHIBA

TIM5964-6UL

MICROWAVE POWER GaAs FET

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14 TOSHIBA

TIM5964-8

MICROWAVE POWER GAAS FET

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28 TOSHIBA

TIM5964-8

MICROWAVE POWER GAAS FET

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18 TOSHIBA

TIM5964-80SL

MICROWAVE POWER GaAs FET

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32 TOSHIBA

TIM5964-80SL_08

IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level

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14 TOSHIBA

TIM5964-8A

TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power

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0 TOSHIBA

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