TC7WZ246FU [TOSHIBA]
CMOS Digital Integrated Circuit Silicon Monolithic Dual Bus Transceiver Buffer And Buffer (Open Drain Outputs); CMOS数字集成电路硅单片双总线收发缓冲区，缓冲区（漏极开路输出）
| 型号： | TC7WZ246FU |
| 厂家： | 
TOSHIBA |
| 描述： | CMOS Digital Integrated Circuit Silicon Monolithic Dual Bus Transceiver Buffer And Buffer (Open Drain Outputs) |
| 文件： | 总8页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC7WZ246FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WZ246FU,TC7WZ246FK
Dual Bus Transceiver
Buffer And Buffer (Open Drain Outputs)
Features
•
•
High output drive
: ±24 mA (min) at
V
= 3 V
CC
Super high speed operation : t = 5.0 ns(max)
TC7WZ246FU
pd
at V
= 5 V, 50 pF
CC
•
•
•
•
Operation voltage range : V
5.5-V tolerant inputs
= 1.65~5.5 V
CC (opr)
5.5-V power down protection outputs
Matches the performance of TC74LCX series when operated at
3.3-V V
CC
Note : Do not apply a signal to any bus pins when it is in the
output mode. Damage may result.
TC7WZ246FK
Marking
SM8
US8
Type name
Lot No.
Z 246
WZ
246
Weight
SSOP8-P-0.65 : 0.02 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Pin Assignment (top view)
Characteristics
Supply voltage range
Symbol
Rating
Unit
SC
1
Control Circuit
8
VCC
V
−0.5~6
−0.5~6
V
CC
A1
A2
2
3
7
6
SD
B1
DC input voltage
V
V
IN
DC output voltage
Input diode current
Output diode current
DC output current
V
−0.5~6
V
OUT
I
−20
mA
mA
mA
mA
IK
GND
4
5
B2
I
−20
OK
I
±50, +50(Note 1)
±50
OUT
Open Drain Buffer
Buffer
DC V /ground current
CC
I
CC
300 (SM8)
200 (US8)
Power dissipation
P
mW
D
Storage temperature
T
−65~150
°C
°C
stg
Lead temperature (10 s)
T
260
L
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1 : Open Drain Buffer Output diode current.
2007-11-01
1
TC7WZ246FU/FK
Truth Table
INPUT
FUNCTION
OUTPUT
SC
L
SD
L
A1BUS
OUTPUT
OUTPUT
INPUT
A2 BUS
B1 BUS
INPUT
B2 BUS
INPUT
OUTPUT
INPUT
A1=B1,A2=B2
A1=B1,B2=A2
B1=A1,A2=B2
B1=A1,B2=A2
L
H
L
INPUT
OUTPUT*
INPUT
H
H
OUTPUT
INPUT
OUTPUT*
OUTPUT*
H
INPUT
OUTPUT*
* : High Impedance
Operating Ranges
Characteristics
Symbol
Rating
Unit
V
1.65~5.5
1.5~5.5
0~5.5
Supply voltage
V
CC
(Note 2)
Input voltage
V
V
V
IN
0~5.5
(Note 3)
(Note 4)
Output voltage
V
OUT
0~ V
CC
−40~85
1.8 V ± 0.15 V ,
Operating temperature
T
opr
°C
0~20 ( V
CC =
2.5 V ± 0.2 V )
Input rise and fall time
dt/dv
ns/V
0~10 ( V
3.3 V ± 0.3 V )
CC =
CC =
0~5 ( V
5.5 V ± 0.5 V )
Note 2 : Data retention only
Note 3 : VCC = 0 V
Note 4 : High or low state
2007-11-01
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TC7WZ246FU/FK
Electrical Characteristics
DC Characteristics
Ta = 25°C
Ta = −40~85°C
Characteristics
Symbol
Test Condition
Unit
V
(V)
Min
Typ.
Max
Min
Max
CC
V
V
CC
× 0.75
CC
× 0.75
1.65~1.95
2.3~5.5
⎯
⎯
⎯
⎯
⎯
⎯
High-Level
Input Voltage
V
⎯
IH
V
× 0.7
V
CC
× 0.7
CC
⎯
⎯
V
V
CC
× 0.25
V
CC
× 0.25
1.65~1.95
2.3~5.5
⎯
⎯
Low-Level
Input Voltage
V
⎯
IL
V
V
CC
× 0.3
CC
⎯
⎯
× 0.3
1.65
2.3
1.55
2.2
2.9
4.4
1.29
1.9
2.4
2.3
3.8
⎯
1.65
2.3
3.0
4.5
1.52
2.14
2.75
2.62
4.13
0
⎯
1.55
2.2
2.9
4.4
1.29
1.9
2.4
2.3
3.8
⎯
⎯
⎯
⎯
I
= -100 μA
OH
⎯
⎯
3.0
⎯
⎯
4.5
V
= V
IH
or IL
IN
⎯
⎯
High-level output voltage
V
I
I
I
I
I
= - 4 mA
= - 8 mA
= - 16 mA
= - 24 mA
= - 32 mA
1.65
2.3
OH
OH
OH
OH
OH
OH
V
⎯
⎯
⎯
⎯
3.0
⎯
⎯
3.0
4.5
⎯
⎯
V
1.65
2.3
0.1
0.1
0.1
0.1
0.24
0.3
0.4
0.55
0.55
±1
0.1
0.1
0.1
0.1
0.24
0.3
0.4
0.55
0.55
±10
⎯
0
⎯
I
= 100 μA
OL
3.0
⎯
0
⎯
4.5
⎯
0
⎯
V
= V
IH
IN
or IL
Low-level output voltage
V
⎯
⎯
I
I
I
I
I
= 4 mA
1.65
2.3
0.08
0.1
0.16
0.24
0.25
⎯
OL
OL
OL
OL
OL
OL
V
⎯
⎯
= 8 mA
⎯
⎯
= 16 mA
= 24 mA
= 32 mA
3.0
⎯
⎯
3.0
⎯
⎯
4.5
Input leakage current
I
V
= 5.5 V or GND
IN
0~5.5
⎯
⎯
μA
μA
IN
3-State Output
Off-State Current
VIN=VIH or VIL
VOUT=VCC or GND
1.65~
5.5
I
⎯
⎯
±5
⎯
±10
OZ
Power off leakage current
Quiescent supply current
I
V
V
or V
= 5.5 V
0.0
⎯
⎯
⎯
⎯
1
1
⎯
⎯
10
10
μA
μA
OFF
IN
IN
OUT
I
= 5.5 V or GND
1.65~5.5
CC
2007-11-01
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TC7WZ246FU/FK
AC Characteristics (input: t = t = 3 ns)
r
f
Ta = 25°C
Ta = −40~85°C
Symbol
Characteristics
Test Condition
Unit
V
(V)
Min
2.0
1.0
0.8
0.5
1.5
0.8
Typ.
⎯
Max
17.0
7.5
Min
2.0
1.0
1.2
0.8
1.5
0.8
Max
18.5
8.0
CC
1.8 ± 0.15
2.5 ± 0.2
3.3 ± 0.3
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
⎯
C
L
= 15 pF, R = 1 MΩ
L
Propagation delay time
( Buffer output)
⎯
5.2
6.0
t
t
pLH
pHL
ns
⎯
4.5
5.5
⎯
6.7
7.0
C
L
= 50 pF, R = 500 Ω
L
⎯
5.0
5.3
tos
tos
LH
HL
Output to output skew
(Note 5) 3.3 ± 0.3
1.0
1.0
ns
ns
⎯
⎯
⎯
1.8 ± 0.15
2.5 ± 0.2
1.8
1.2
0.8
0.5
⎯
⎯
⎯
⎯
⎯
7
9.5
5.8
5.0
4.2
⎯
1.8
1.2
0.8
0.5
⎯
10.5
6.4
5.3
4.5
⎯
3-state output Disable time
( Open drain output)
t
pLZ
pLZ
C
L
= 50 pF, R = 500 Ω
L
3.3 ± 0.3
5.0 ± 0.5
0
Input capacitance
C
⎯
⎯
⎯
pF
pF
pF
IN
Bus input capacitance
Output capacitance
C
I / 0
5.5
⎯
8
⎯
⎯
⎯
C
5.5
⎯
9
⎯
⎯
⎯
OUT
3.3
⎯
29
33
⎯
⎯
⎯
⎯
⎯
⎯
Power dissipation
capacitance
C
(Note 6)
(Note 7)
pF
PD
5.5
⎯
⎯
⎯
⎯
2.5 ± 0.2
3.3 ± 0.3
5.0 ± 0.5
7.5
7.0
6.5
⎯
9.0
8.2
7.4
⎯
Minimum set-up time
S
ts
ns
⎯
⎯
⎯
⎯
Note 5 :Parameter guaranteed by desigh.
tosLH = |tpLHm - tpLHn|, tosHL = |tpHLm - tpHLn|
Note 6 : C is defined as the value of the internal equivalent capacitance which is calculated from the operating
PD
current consumption without load.
Average operating current can be obtained by the equation:
I
= C ･V ･f + I /2
PD CC IN CC
CC (opr.)
Note 7 : Sts is the time which must be waited for an input signal when a bus signal direction is switched.
2007-11-01
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TC7WZ246FU/FK
AC Characteristics (input: t = t = 3 ns , Bn = Pull Up ( RPull Up = 500 Ω , VPull Up = 5 V) )
r
f
Ta = 25°C
Ta = −40~85°C
Symbol
Characteristics
Test Condition
Unit
V
(V)
Min
1.0
Typ.
Max
9.0
Min
1.0
Max
CC
Input = An
Propagation delay time
( An-Bn )
= VIH or VIL
Output = Bn
t
t
pZL
pLZ
3.3 ± 0.3
⎯
11.0
ns
CL= 50 pF
Input = Bn
= 5 V or VIL
Propagation delay time
( Bn-An )
t
t
pLH
pHL
3.3 ± 0.3
3.3 ± 0.3
1.0
⎯
6.5
1.0
1.0
7.0
1.0
ns
ns
Output = An
CL= 50 pF
tos
tos
LH
HL
Output to output skew
(Note 8)
⎯
⎯
⎯
Note 8 :Parameter guaranteed by desigh.
tosLH = |tpLHm - tpLHn|､tosHL = |tpHLm - tpHLn|
AC Characteristics (input: t = t = 3 ns , Bn = Pull Up (RPull Up = 10k Ω , VPull Up = 5 V) )
r
f
Ta = 25°C
Ta = −40~85°C
Symbol
Characteristics
Test Condition
Unit
ns
V
(V)
Min
1.0
Typ.
Max
6.7
Min
1.0
Max
7.3
CC
Input = An
t
t
⎯
⎯
pZL
Propagation delay time
( An-Bn )
= VIH or VIL
Output = Bn
3.3 ± 0.3
⎯
70.0
6.3
⎯
90.0
7.0
pLZ
CL= 50 pF
Input = Bn
Propagation delay time
( Bn-An )
= 5 V or VIL
t
t
pLH
pHL
3.3 ± 0.3
3.3 ± 0.3
1.0
⎯
1.0
ns
ns
Output = An
CL= 50 pF
tos
tos
LH
HL
Output to output skew
(Note 9)
1.0
1.0
⎯
⎯
⎯
Note 9 :Parameter guaranteed by desigh.
tosLH = |tpLHm - tpLHn|､tosHL = |tpHLm - tpHLn|
2007-11-01
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TC7WZ246FU/FK
Package Dimensions
Weight: 0.02 g (typ.)
2007-11-01
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TC7WZ246FU/FK
Package Dimensions
Weight: 0.01 g (typ.)
2007-11-01
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TC7WZ246FU/FK
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
2007-11-01
8
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