TC75S55F_07 [TOSHIBA]
Single Operational Amplifier; 单路运算放大器
| 型号： | TC75S55F_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Single Operational Amplifier |
| 文件： | 总11页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC75S55F/FU/FE
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TC75S55F,TC75S55FU,TC75S55FE
Single Operational Amplifier
The TC75S55F/TC75S55FU/TC75S55FE is a CMOS single-
operation amplifier which incorporates a phase compensation
circuit. It is designed for use with a low-voltage, low-current
TC75S55F
power supply; this differentiates this device from conventional
general-purpose bipolar op-amps.
Features
•
•
•
Low-voltage operation
: V
= ±0.9~3.5 V or 1.8~7 V
DD
Low-current power supply : I
(V
= 3 V) = 10 μA (typ.)
DD
DD
Built-in phase-compensated op-amp, obviating the need for
any external device
TC75S55FU
•
Ultra-compact package
TC75S55FE
Absolute Maximum Ratings (Ta = 25°C)
Weight
Characteristics
Supply voltage
Symbol
Rating
Unit
SSOP5-P-0.95 : 0.014 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
V
, V
DD SS
7
V
V
V
SON5-P-0.50
: 0.003 g (typ.)
Differential input voltage
Input voltage
DV
±7
IN
V
V
~V
DD SS
IN
TC75S55F/FU
TC75S55FE
200
100
Power
dissipation
P
mW
D
Operating temperature
Storage temperature
T
−40~85
°C
°C
opr
T
−55~125
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
TC75S55F/FU/FE
Marking (top view)
Pin Connection (top view)
V
OUT
4
DD
5
5
4
S F
1
2
3
IN (+)
IN (−)
V
1
2
3
SS
Electrical Characteristics
DC Characteristics (V = 3.0 V, V = GND, Ta = 25°C)
DD
SS
Test
Circuit
Characteristics
Input offset voltage
Symbol
Test Condition
= 10 kΩ
Min
Typ.
Max
Unit
V
1
⎯
⎯
2
R
⎯
⎯
2
1
10
⎯
mV
pA
pA
V
IO
S
Input offset current
I
⎯
⎯
⎯
⎯
IO
Input bias current
I
⎯
1
⎯
I
Common mode input voltage
Voltage gain (open loop)
CMV
0.0
60
2.9
⎯
⎯
70
⎯
⎯
2.1
⎯
IN
G
V
⎯
3
dB
>
V
R
R
1 MΩ
1 MΩ
⎯
OH
L
Maximum output voltage
V
>
V
4
0.1
OL
L
Common mode input signal
Rejection Ratio
CMRR
SVRR
2
V
V
= 0.0~2.1 V
60
70
⎯
dB
IN
Supply voltage rejection ratio
Supply current
1
5
6
7
= 1.8~7.0 V
60
⎯
70
10
⎯
20
⎯
⎯
dB
μA
μA
μA
DD
I
⎯
⎯
⎯
DD
Source current
I
10
20
source
Sink current
I
100
450
sink
DC Characteristics (V = 1.8 V, V = GND, Ta = 25°C)
DD
SS
Test
Circuit
Characteristics
Input offset voltage
Symbol
Test Condition
= 100 kΩ
Min
Typ.
Max
Unit
V
1
⎯
⎯
2
R
⎯
⎯
2
1
10
⎯
mV
pA
pA
V
IO
S
Input offset current
I
⎯
⎯
⎯
⎯
IO
Input bias current
I
⎯
1
⎯
I
Common mode input voltage
Voltage gain (open loop)
CMV
0.0
60
1.7
⎯
⎯
70
⎯
⎯
8
0.9
⎯
IN
G
V
⎯
3
dB
>
V
R
R
1 MΩ
1 MΩ
⎯
OH
L
Maximum output voltage
V
>
V
4
0.1
16
⎯
OL
DD
L
Supply current
Source current
Sink current
I
5
⎯
⎯
⎯
⎯
μA
μA
μA
I
6
8
16
400
source
I
7
100
⎯
sink
2
2007-11-01
TC75S55F/FU/FE
AC Characteristics (V = 3.0 V, V = GND, Ta = 25°C)
DD
SS
Test
Circuit
Characteristics
Symbol
SR
Test Condition
Min
Typ.
Max
Unit
Slew rate
Unity gain cross frequency
⎯
⎯
⎯
⎯
⎯
⎯
0.08
160
⎯
⎯
V/μs
f
T
kHz
AC Characteristics (V = 1.8 V, V = GND, Ta = 25°C)
DD
SS
Test
Circuit
Characteristics
Symbol
SR
Test Condition
Min
Typ.
Max
Unit
Slew rate
⎯
⎯
⎯
⎯
⎯
⎯
0.06
140
⎯
⎯
V/μs
Unity gain cross frequency
f
T
kHz
Test Circuit
1. SVRR, V
IO
•
SVRR
For each of the two V
V
DD
values, measure the V
value, as
DD
OUT
indicated below, and calculate the value of SVRR using the
equation shown.
R
F
When V
When V
= 1.8 V, V
= 7.0 V, V
= V 1 and V
DD
= V 2 and V
DD
= V
= V
1
2
DD
DD
DD
DD
OUT
OUT
OUT
OUT
R
R
S
V
⎛
⎞
⎟
OUT
1−
1−
2
R
V
V
V
⎜
⎜
⎝
OUT
OUT
S
SVRR = 20 log
×
⎟
2
R + R
V
F S
S
DD
DD
⎠
•
V
IO
V
/2
DD
Measure the value of V
the following equation.
and calculate the value of V using
IO
OUT
⎛
⎞
R
S
V
DD
2
= ⎜
⎜
−
⎟ ×
⎟
V
V
OUT
IO
R
+ R
⎝
⎠
F
S
2. CMRR, CMV
IN
•
CMRR
Measure the V
V
DD
value, as indicated below, and calculate the
OUT
value of the CMRR using the equation shown.
R
F
When V = 0.0 V, V = V 1 and V
IN IN IN
= V
= V
1
2
OUT
OUT
OUT
When V = 2.1 V, V = V 2 and V
IN
IN
IN
OUT
R
R
S
⎛
⎞
⎟
1−
2
R
V
V
V
⎜
OUT
V
OUT
S
V
OUT
CMRR = 20 log
×
⎜
⎝
⎟
⎠
1−
2
R
+ R
F S
IN
IN
S
V
IN
•
CMV
IN
Input range within which the CMRR specification guarantees
value (as varied by the V value).
V
/2
DD
V
OUT
IN
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2007-11-01
TC75S55F/FU/FE
3. V
OH
V
V
V
DD
DD
DD
•
V
OH
V
DD
2
=
=
− 0.05 V
+ 0.05 V
V
IN1
IN2
V
DD
2
V
V
OH
V
V
IN2
IN1
4. V
OL
•
V
OL
V
DD
2
=
=
+ 0.05 V
− 0.05 V
V
V
IN1
IN2
V
DD
2
V
OL
V
V
IN2
IN1
5. I
DD
M
I
DD
V
/2
DD
6. I
7. I
sink
source
V
DD
V
DD
M
M
4
2007-11-01
TC75S55F/FU/FE
I
– V
DD
G
V
– f
DD
20
16
12
8
120
80
40
0
V
V
= 3 V
= GND
DD
SS
V
V
= GND
= V /2
DD
SS
IN
Ta = 25°C
Ta = 25°C
4
0
0
1
2
3
4
5
6
7
10
100
1 k
10 k
100 k
(Hz)
1 M
10 M
Supply voltage
V
(V)
Frequency f
DD
V
– I
sink
OL
I
– V
DD
sink
1000
800
2.0
1.6
V
V
= 1.8 V
= GND
DD
SS
V
= GND
SS
Ta = 25°C
Ta = 25°C
1.2
0.8
600
400
200
0
0.4
0
0
200
400
600
800
0
1
2
3
4
5
6
7
Supply voltage
V
DD
(V)
Sink current
I
(μA)
sink
V
– I
sink
OL
V
– I
sink
OL
3
2
1
0
5
4
V
V
= 5.0 V
= GND
DD
SS
V
V
= 3.0 V
= GND
DD
SS
Ta = 25°C
Ta = 25°C
3
2
1
0
0
0
200
400
600
800
200
400
600
800
Sink current
I
(μA)
Sink current
I
(μA)
sink
sink
5
2007-11-01
TC75S55F/FU/FE
I
– V
V – I
OH source
source
DD
50
40
30
2.0
1.6
V
V
= 1.8 V
= GND
DD
SS
V
= GND
SS
Ta = 25°C
Ta = 25°C
1.2
0.8
20
10
0
0.4
0
28
0
1
2
3
4
5
6
7
0
4
8
12
16
20
24
Supply voltage
V
DD
(V)
Source current
I
(μA)
source
V
– I
source
V – I
OH source
OH
3
2
1
0
5
4
3
2
V
V
= 3.0 V
= GND
DD
SS
Ta = 25°C
1
0
V
V
= 5.0 V
= GND
DD
SS
Ta = 25°C
28
28
0
4
8
12
16
20
24
0
4
8
12
16
20
24
Source current
I
(μA)
Source current
I
(μA)
source
source
V
– R
V
– R
OH L
OH
L
2.0
1.6
3
2
1
V
V
= 1.8 V
= GND
DD
SS
V
V
= 3.0 V
= GND
DD
SS
Ta = 25°C
Ta = 25°C
1.2
0.8
0.4
0
0
10 k
100 k
1 M
L
100 k
1 M
10 k
10 M
10 M
Load resistance
R
(Ω)
Load resistance
R
(Ω)
L
6
2007-11-01
TC75S55F/FU/FE
V
– R
P – Ta
D
OH
L
5
4
3
2
1
300
200
100
0
This data was obtained from an unmounted
standalone IC. If the IC is mounted on a
PCB, its power dissipation will be greater.
Note that, depending on the PCB’s thermal
characteristics, the curves may differ
substantially from those shown.
V
V
= 5.0 V
= GND
DD
SS
Ta = 25°C
0
10 k
100 k
1 M
−40
0
40
80
120
10 M
Load resistance
R
L
(Ω)
Ambient temperature Ta (°C)
7
2007-11-01
TC75S55F/FU/FE
Package Dimensions
Weight: 0.014 g (typ.)
8
2007-11-01
TC75S55F/FU/FE
Package Dimensions
Weight: 0.006 g (typ.)
9
2007-11-01
TC75S55F/FU/FE
Package Dimensions
Weight: 0.003 g (typ.)
10
2007-11-01
TC75S55F/FU/FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
11
2007-11-01
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