概述
规格参数
数据手册SSM3K303T 概述
High Speed Switching Applications 高速开关应用 小信号场效应晶体管
SSM3K303T 规格参数
| 生命周期： | End Of Life | 包装说明： | SMALL OUTLINE, R-PDSO-G3 |
| 针数： | 3 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | 风险等级： | 5.3 |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 30 V |
| 最大漏极电流 (Abs) (ID)： | 2.9 A | 最大漏极电流 (ID)： | 0.0029 A |
| 最大漏源导通电阻： | 0.083 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-PDSO-G3 | JESD-609代码： | e0 |
| 元件数量： | 1 | 端子数量： | 3 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 极性/信道类型： | N-CHANNEL |
| 最大功率耗散 (Abs)： | 0.7 W | 认证状态： | Not Qualified |
| 子类别： | FET General Purpose Power | 表面贴装： | YES |
| 端子面层： | TIN LEAD | 端子形式： | GULL WING |
| 端子位置： | DUAL | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
SSM3K303T 数据手册
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PDF下载SSM3K303T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K303T
High Speed Switching Applications
Unit: mm
•
•
4 V drive
Low ON-resistance:
R
R
= 120 mΩ (max) (@V
= 4V)
GS
on
=
83 mΩ (max) (@V
= 10V)
on
GS
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain–source voltage
Symbol
Rating
30
Unit
V
V
DS
Gate–source voltage
V
± 20
2.9
V
GSS
DC
I
D
Drain current
A
Pulse
I
5.8
DP
D (Note 1)
Drain power dissipation
Channel temperature
P
700
mW
°C
T
150
ch
Storage temperature range
T
−55~150
°C
stg
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
―
TOSHIBA
2-3S1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
Weight: 10 mg (typ.)
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 1 mA, V = 0
Min
Typ.
Max
Unit
Drain–source breakdown voltage
Drain cutoff current
V
I
30
⎯
⎯
1.1
2.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
V
μA
μA
V
(BR) DSS
D
GS
= 30 V, V
I
V
V
V
V
= 0
DSS
DS
GS
DS
DS
GS
= ± 20 V, V
Gate leakage current
I
= 0
⎯
±1
2.6
⎯
83
120
⎯
⎯
⎯
⎯
⎯
⎯
⎯
GSS
DS
Gate threshold voltage
Forward transfer admittance
V
= 5 V, I = 1 mA
⎯
th
D
⏐Y ⏐
= 5 V, I = 1.5 A
(Note2)
(Note2)
(Note2)
4.9
64
S
fs
D
I
I
= 1.5 A, V
= 10 V
= 4 V
D
D
GS
GS
Drain–source ON-resistance
R
mΩ
DS (ON)
= 1.0 A, V
88
Input capacitance
C
V
V
V
= 10 V, V
= 10 V, V
= 10 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
180
100
38
pF
pF
pF
iss
DS
DS
DS
GS
GS
GS
Output capacitance
Reverse transfer capacitance
Total Gate Charge
C
oss
C
rss
Qg
3.3
1.4
1.9
13
V
V
= 15 V, I = 2.9 A
DS
DS
GS
nC
Gate−Source Charge
Gate−Drain Charge
Qgs
Qgd
= 4 V
Turn-on time
Switching time
t
t
on
off
V
V
= 10 V, I = 1.5 A,
DD
GS
D
ns
V
= 0 to 4 V, R = 10 Ω
Turn-off time
14
G
⎯
⎯
⎯
Drain–source forward voltage
Note2: Pulse test
V
I
= − 2.9 A, V = 0 V
GS
(Note2)
– 0.9
– 1.25
DSF
D
1
2007-11-01
SSM3K303T
Switching Time Test Circuit
(a) Test Circuit
(b) V
(c) V
IN
4 V
0 V
90%
OUT
4 V
IN
10%
0
V
DD
OUT
10 μs
10%
90%
V
DD
V
= 10 V
= 10 Ω
DD
V
DS (ON)
R
t
f
t
r
G
<
D.U. 1%
t
t
off
on
V
: t , t < 5 ns
IN
r
f
Common Source
Ta = 25°C
Marking
Equivalent Circuit (top view)
3
3
KKE
2
1
1
2
Precaution
V
th
can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for
D
this product. For normal switching operation, V
requires a higher voltage than V and V
requires a lower
GS (off)
GS (on)
th
voltage than V
th.
(The relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2007-11-01
SSM3K303T
I
– V
I – V
D GS
D
DS
5
10
1
10 V
6V
4 V 3.6V
Common Source
VDS = 5 V
VGS = 3.3V
4
3
0.1
Ta = 100 °C
2
1
25 °C
0.01
−25 °C
0.001
Common Source
Ta = 25°C
0
0.0001
0
0.2
0.4
0.6
0.8
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Drain–source voltage
V
(V)
DS
Gate–source voltage
V
(V)
GS
R
– I
D
R
– V
GS
DS (ON)
DS (ON)
300
250
300
250
I
= 1.5 A
D
Common Source
Common Source
Ta = 25°C
200
200
150
100
150
100
Ta =100 °C
25 °C
VGS = 4.0Ｖ
50
0
50
0
10V
−25 °C
0
1
2
3
4
5
0
2
4
6
8
10
Gate–source voltage
V
(V)
GS
Drain current
I
(A)
D
R
– Ta
V
– Ta
th
DS (ON)
500
400
300
2.0
1.5
Common Source
1.0
200
100
I
= 1.0A / V
= 4.0 V
GS
D
0.5
0
Common source
1.5 A / 10V
V
= 5 V
DS
I
= 1 mA
D
0
−50
0
50
100
150
−50
0
50
100
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
3
2007-11-01
SSM3K303T
I
– V
DS
DR
|Y | – I
fs
D
10
3
10
1
Common Source
VGS = 0 V
D
Common Source
= 5 V
V
DS
Ta = 25°C
Ta = 25°C
I
DR
G
S
0.1
1
Ta = 100 °C
0.01
.3
25 °C
.001
−25 °C
0.0001
0.1
0.01
1
0.1
10
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
Drain current
I
(A)
Drain–source voltage
V
(V)
D
DS
t – I
D
C – V
DS
1000
600
00
Common Source
t
t
off
f
V
V
= 10 V
DD
GS
500
300
= 0 to 4 V
Ta = 25°C
R
G
= 10 Ω
C
iss
100
C
oss
t
t
on
10
50
30
Common Source
Ta = 25°C
r
C
rss
f = 1 MHz
VGS = 0 V
10
0.1
1
0.01
1
10
100
0.1
1
10
Drain current
I
(A)
D
Drain–source voltage
V
(V)
DS
Dynamic Input Characteristic
10
8
Common Source
= 2.9 A
I
D
Ta = 25°C
6
VDD=15V
VDD=24V
4
2
0
0
2
4
6
8
10
Total Gate Charge Qg (nC)
4
2007-11-01
SSM3K303T
r
th
– t
P – T
D a
w
1000
100
1000
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
Cu Pad : 0.8 mm2×3)
b
800
600
400
a
b
a
Single Pulse
10
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
Cu Pad : 0.8 mm2×3)
200
0
1
0.001
-40 -20
0
20
40
60 80
100 120 140 160
0.01
0.1
10
100
1000
1
Ambient temperature
T
(°C)
a
Pulse width
t
(s)
w
5
2007-11-01
SSM3K303T
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01
SSM3K303T 相关器件
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| SSM3K315T(TE85L,F) | TOSHIBA | TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,6A I(D),TO-236AA | 获取价格 |
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