SSM3K01T [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type; 东芝场效应晶体管硅N沟道MOS型
| 型号： | SSM3K01T |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 文件： | 总5页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM3K01T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
High Speed Switching Applications
Unit: mm
·
·
Small Package
Low on Resistance: R = 120 mΩ (max) (@V
= 4 V)
on
GS
GS
: R = 150 mΩ (max) (@V
= 2.5 V)
on
·
Low Gate Threshold Voltage: V = 0.6~1.1 V
th
(@V
DS
= 3 V, I = 0.1 mA)
D
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
DC
V
30
±10
3.2
V
V
DS
V
GSS
I
D
Drain current
A
I
DP
(Note2)
Pulse
6.4
P
D
Drain power dissipation (Ta = 25°C)
1250
mW
(Note1)
Channel temperature
Storage temperature range
T
150
-55~150
°C
°C
ch
JEDEC
JEITA
―
―
T
stg
Note1: Mounted on FR4 board
2
TOSHIBA
2-3S1A
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm , t = 10 s)
Weight: 10 mg (typ.)
Note2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
and the drain power dissipation P vary according to
D
th (ch-a)
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
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2002-01-24
SSM3K01T
Marking
Equivalent Circuit
3
3
K W
1
2
1
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±10 V, V = 0
¾
30
¾
0.6
2.6
¾
¾
¾
¾
¾
¾
¾
¾
¾
±1
¾
mA
V
GSS
GS
DS
Drain-Source breakdown voltage
Drain Cut-off current
V
I
= 1 mA, V
GS
= 0
(BR) DSS
D
I
V
V
V
= 30 V, V = 0
GS
¾
1
mA
V
DSS
DS
DS
DS
Gate threshold voltage
V
= 3 V, I = 0.1 mA
¾
1.1
¾
th
D
Forward transfer admittance
Drain-Source ON resistance
Drain-Source ON resistance
Input capacitance
|Y |
fs
= 3 V, I = 1.6 A
(Note3)
(Note3)
(Note3)
5.2
85
S
D
R
I
I
= 1.6 A, V
= 4 V
120
150
¾
mW
mW
pF
pF
pF
DS (ON)
DS (ON)
D
D
GS
GS
R
= 1.3 A, V
= 2.5 V
115
152
41
C
V
V
V
V
V
= 10 V, V
= 10 V, V
= 10 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
iss
rss
oss
on
DS
DS
DS
DD
GS
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
¾
C
t
102
45
¾
Turn-on time
Turn-off time
= 15 V, I = 0.5 A
¾
D
Switching time
nS
= 0~2.5 V, R = 4.7 W
t
G
69
¾
off
Note3: Pulse test
Switching Time Test Circuit
(a) Test circuit
2.5 V
10 ms
90%
(b) V
IN
V
= 15 V
DD
G
I
D
2.5 V
0
V
GS
OUT
R
= 4.7 W
10%
IN
<
0
D.U. 1%
V
COMMON SOURCE
Ta = 25°C
V
: t , t < 5 ns
r f
DD
IN
10%
90%
(c) V
OUT
V
DS
V
DS (ON)
V
DD
t
t
f
r
t
t
off
on
Precaution
V
can be expressed as voltage between gate and source when low operating current value is I = 100 mA for
D
th
this product. For normal switching operation, V
requires higher voltage than V and V
th GS (off)
requires
GS (on)
lower voltage than V
.
th
(relationship can be established as follows: V
< V < V
)
GS (off)
th GS (on)
Please take this into consideration for using the device.
V
GS
recommended voltage of 2.5 V or higher to turn on this product.
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2002-01-24
SSM3K01T
I
– V
I
– V
GS
D
DS
D
4
3.5
3
10000
4.0
2.5
2.1
Common Source
10
Common Source
Ta = 25°C
V
DS
= 3 V
1000
100
10
100°C
Ta = 25°C
2.5
2
1.9 V
1.7 V
-25°C
1.5
1
1
V
= 1.5 V
0.1
GS
0.5
0
0.01
0
0.5
1
1.5
(V)
2
0
0.5
1
1.5
2
2.5
(V)
3
Drain-Source voltage
V
Gate-Source voltage
V
GS
DS
R
– I
R
– Ta
DS (ON)
D
DS (ON)
200
160
120
80
250
200
150
100
50
Common Source
Ta = 25°C
Common Source
V
V
= 2.5 V
= 2.5 V, I = 1.3 A
GS D
GS
V
= 4 V
GS
V
= 4 V, I = 1.6 A
D
GS
40
0
0
0
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
Drain current
I
D
(A)
Ambient temperature Ta (°C)
|Y | – I
fs
C – V
DS
D
10
1000
Common Source
Common Source
V
= 0
GS
V
= 3 V
DS
Ta = 25°C
f = 1 MHz
Ta = 25°C
C
iss
1
100
C
oss
C
rss
0.1
10
0.1
0.01
0.1
Drain current
1
10
1
10
100
I
D
(A)
Drain-Source voltage
V
(V)
DS
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2002-01-24
SSM3K01T
t – I
P – Ta
D
D
1000
100
10
1.5
1.25
1
Common Source
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm
V
V
R
= 15 V
= 0~2.5 V
= 4.7 W
t = 10 s
DD
GS
G
2
）
Ta = 25°C
0.75
0.5
0.25
0
DC
t
off
t
f
t
on
t
r
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
0.01
0.1
1
Drain current
I
D
(A)
Safe operating area
10
I
max (pulsed)
D
1 ms*
I
max (continuous)
D
10 ms*
1
DC operation
10 s*
Ta = 25°C
Mounted on FR4 board
(25.4 mm ´ 25.4 mm
0.1
´ 1.6 t,
2
Cu Pad: 645 mm )
*: Single nonrepetitive
Pulse
Ta = 25°C
V
DSS
max
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
10
100
Drain-source voltage
V
(V)
DS
r
th
– tw
1000
100
10
Single pulse
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
2
Cu Pad: 645 mm )
1
0.001
0.01
0.1
1
10
100
1000
Pulse width tw (s)
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2002-01-24
SSM3K01T
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-01-24
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