SSM3J15F,LF [TOSHIBA]
Small Signal Field-Effect Transistor;
| 型号： | SSM3J15F,LF |
| 厂家： | 
TOSHIBA |
| 描述： | Small Signal Field-Effect Transistor 晶体 开关 晶体管 场效应晶体管 |
| 文件： | 总5页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM3J15CT
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J15CT
High-Speed Switching Applications
Analog Switch Applications
Unit: mm
•
•
Optimum for high-density mounting in small packages
Low ON-resistance : R = 12 Ω (max) (@V
= −4 V)
on
GS
0.6±0.05
0.5±0.03
: R = 32 Ω (max) (@V
= −2.5 V)
on
GS
Absolute Maximum Ratings (Ta = 25°C)
３
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
１
２
V
−30
±20
V
V
DS
Gate-Source voltage
V
GSS
0.05±0.03
0.35±0.02
DC
I
−100
−200
100
0.15±0.03
D
Drain current
mA
Pulse
I
DP
Drain power dissipation (Ta = 25°C)
Channel temperature
P
(Note 1)
mW
°C
D
T
150
ch
Storage temperature range
T
stg
−55~150
°C
CST3
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
-
-
TOSHIBA
2-1J1B
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Weight: 0.75 mg (typ.)
Note 1: Mounted on an FR4 board
(10 mm × 10 mm × 1.0 t, Cu Pad: 100 mm )
2
Marking (Top View)
Pin Condition (Top View)
Equivalent Circuit
Polarity mark
Polarity mark (on the top)
3
1
3
S1
2
1
2
1. Gate
2. Source
3. Drain
*Electrodes: on the bottom
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, ensure that the environment is protected
against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
1
2007-11-01
SSM3J15CT
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
MIN.
TYP.
⎯
MAX.
UNIT
μA
V
I
V
= ±16 V, V
= 0
= 0
= 0
⎯
−30
⎯
±1
⎯
GSS
GS
DS
GS
GS
Drain-Source breakdown voltage
Drain cut-off current
V
I
= −0.1 mA, V
⎯
(BR) DSS
D
I
V
V
V
= −30 V, V
⎯
−1
−1.7
⎯
μA
V
DSS
DS
DS
DS
Gate threshold voltage
V
= −3 V, I = −0.1 mA
−1.1
20
⎯
⎯
th
D
Forward transfer admittance
⎪Y ⎪
fs
= −3 V, I = −10 mA
⎯
mS
D
I
I
= −10 mA, V
= −4 V
GS
8
12
32
⎯
D
D
Drain-Source ON-resistance
R
Ω
DS (ON)
= −1 mA, V
= −2.5 V
⎯
14
9.1
3.5
8.6
65
175
GS
Input capacitance
C
C
⎯
pF
pF
pF
iss
V
= −3 V, V
= 0, f = 1 MHz
GS
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
oss
on
C
t
⎯
⎯
⎯
⎯
⎯
⎯
Turn-on time
Turn-off time
V
V
= −5 V, I = −10 mA,
DD
GS
D
Switching time
ns
= 0~−5 V
t
off
Switching Time Test Circuit
(a) Test circuit
(b) V
(c) V
IN
0 V
OUT
10%
0
IN
90%
−5V
R
L
−5 V
10 μs
V
DD
V
OUT
DS (ON)
90%
V
= −5 V
DD
<
Duty 1%
10%
V
: t , t < 5 ns
= 50 Ω)
V
IN
r
f
DD
t
t
f
r
(Z
out
Common Source
t
t
off
on
Ta = 25°C
Precaution
V
th
can be expressed as the voltage between gate and source when the low operating current value is I
100 μA for
D = -
this product. For normal switching operation, V
voltage than V (The relationship can be established as follows: V
th.
requires a higher voltage than V and V requires a lower
GS (off)
GS (on)
th
.)
GS (on)
< V < V
GS (off)
th
Take this into consideration when using the device.
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2007-11-01
SSM3J15CT
ID - VDS
ID - VGS
-250
-200
-150
-100
-50
-1000
-100
-10
Common Source
Ta=25°C
-5
Common Source
VDS=-3V
-10 -7
-4
Ta=100°C
-3.3
-3.0
25°C
-1
-25°C
-2.7
-2.5
-0.1
-0.01
VGS=-2.3V
-1.5 -2
0
0
-1
-2
-3
-4
-5
0
-0.5
-1
Drain-Source Voltage VDS(V)
Gate-Source Voltage VGS(V)
RDS(ON) - ID
RDS(ON) - VGS
40
30
20
10
0
20
18
16
14
12
10
8
Common Source
Ta=25°C
Source Common
ID=-1mA
Ta=100°C
6
VGS=-2.5V
25°C
4
-4V
-25°C
2
0
-1
-10
-100
-1000
0
-2
-4
-6
-8
-10
Drain Current ID(mA)
Gate-Source Voltage VGS (V)
RDS(ON) - Ta
Vth - Ta
30
20
10
0
-2
Common Source
Common Source
ID=-0.1mA
-1.8
-1.6
-1.4
-1.2
-1
VDS=-3V
VGS=-2.5V,ID=-1mA
-0.8
-0.6
-0.4
-0.2
0
-4V,-10mA
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Ambient temparature Ta(°C)
Ambient temparature Ta(°C)
3
2007-11-01
SSM3J15CT
|Yfs| - ID
IDR - VDS
1000
100
10
-250
-200
-150
-100
-50
Common Source
VDS=-3V
Ta=25°C
Common Source
VGS=0V
Ta=25°C
1
0
-1
-10
-100
-1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain current ID (mA)
Drain-Source voltage VDS (V)
C - VDS
t - ID
100
10
1
10000
1000
100
Common Source
VGS=0V
f=1MHz
Common Source
VDD=-5V
VGS=0~-5V
Ta=25°C
toff
Ta=25°C
tf
Ciss
Coss
ton
tr
Crss
10
-0.1
-1
-10
-100
-0.1
-1
-10
-100
Drain-Source voltage VDS (V)
Drain Current ID (mA)
PD - Ta
250
mounted on FR4 board
(10mm×10mm×1.0t
Cu Pad:100mm2)
200
150
100
50
0
0
20
40
60
80
100 120 140 160
Ambient temperature (°C)
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2007-11-01
SSM3J15CT
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
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