RN2607 [TOSHIBA]

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process); 东芝晶体管PNP硅外延型(厘过程)
RN2607
型号: RN2607
厂家: TOSHIBA    TOSHIBA
描述:

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
东芝晶体管PNP硅外延型(厘过程)

晶体 小信号双极晶体管 开关 光电二极管 PC
文件: 总6页 (文件大小:185K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
                                                               
                                                               
RN2607~RN2609  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2607,RN2608,RN2609  
And Driver Circuit Applications  
Switching, Inverter Circuit, Interface Circuit  
Unit in mm  
l Including two devices in SM6 (super mini type with 6 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1607~RN1609  
Equivalent Circuit andBias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2607  
RN2608  
RN2609  
10  
22  
47  
47  
47  
22  
JEDEC  
EIAJ  
TOSHIBA  
Weight: 0.015g  
2-3N1A  
Eauivalent Circuit (Top View)  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2607~RN2609  
Collector-emitter voltage  
RN2607  
RN2608  
RN2609  
6  
Emitter-base voltage  
V
V
7  
EBO  
15  
Collector current  
I
100  
300  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
T
150  
j
T
55~150  
°C  
stg  
*
Total rating  
1
2001-06-05  
                                                                           
                                                                           
RN2607~RN2609  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)  
Test  
Characteristic  
Symbol  
Test Condition  
= 50V, I = 0  
Min  
Typ.  
Max  
Unit  
Circuit  
I
I
V
V
V
V
V
100  
500  
0.15  
0.145  
0.311  
nA  
nA  
CBO  
CEO  
CB  
CE  
EB  
EB  
EB  
E
Collector cut-off  
RN2607~RN2609  
current  
= 50V, I = 0  
B
RN2607  
RN2608  
RN2609  
RN2607  
RN2608  
RN2609  
= 6V, I = 0  
0.081  
0.078  
0.167  
80  
C
Emitter cut-off  
current  
I
mA  
= 7V, I = 0  
EBO  
C
= 15V, I = 0  
C
DC current gain  
h
FE  
V
= 5V, I = 10mA  
V
80  
CE  
C
70  
Collector-emitter  
saturation voltage  
RN2607~RN2609  
V
I
= 5mA, I = 0.25mA  
0.1  
0.3  
CE (sat)  
C
B
RN2607  
RN2608  
RN2609  
RN2607  
RN2608  
RN2609  
0.7  
1.0  
2.2  
0.5  
0.6  
1.5  
1.8  
2.6  
5.8  
1.0  
1.16  
2.6  
Input voltage (ON)  
Input voltage (OFF)  
V
V
V
= 0.2V, I = 5mA  
V
I (ON)  
CE  
C
V
= 5V, I = 0.1mA  
V
I (OFF)  
CE  
C
Translation  
frequency  
RN2607~RN2609  
RN2607~RN2609  
f
V
V
= 10V, I = 5mA  
200  
3
MHz  
pF  
T
CE  
CB  
C
Collector output  
capacitance  
= 10V, I = 0  
E
C
6
ob  
f = 1MHz  
RN2607  
RN2608  
RN2609  
RN2607  
RN2608  
RN2609  
7
10  
22  
13  
Input resistor  
Resistor ratio  
R1  
kΩ  
15.4  
32.9  
0.191  
0.421  
1.92  
28.6  
61.1  
0.232  
0.515  
2.35  
47  
0.213  
0.468  
2.14  
R1/R2  
2
2001-06-05  
RN2607~RN2609  
(Q1, Q2 Common)  
3
2001-06-05  
RN2607~RN2609  
(Q1, Q2 Common)  
4
2001-06-05  
RN2607~RN2609  
Type Name  
RN2607  
Marking  
RN2608  
RN2609  
5
2001-06-05  
RN2607~RN2609  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
6
2001-06-05  

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