RN1408

更新时间:2024-09-18 02:07:08
品牌:TOSHIBA
描述:Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1408 概述

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 开关,逆变电路,接口电路及驱动电路的应用 小信号双极晶体管

RN1408 规格参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.81
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 2.14最大集电极电流 (IC):0.1 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
VCEsat-Max:0.3 VBase Number Matches:1

RN1408 数据手册

通过下载RN1408数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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RN1407,RN1408,RN1409  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1407,RN1408,RN1409  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
And Driver Circuit Applications  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2407~RN2409  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN1407  
RN1408  
RN1409  
10  
22  
47  
47  
47  
22  
JEDEC  
TO-236MOD  
EIAJ  
SC-59  
TOSHIBA  
Weight: 0.012g  
2-3F1A  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
RN1407~RN1409  
RN1407~RN1409  
RN1407  
V
V
50  
50  
V
V
CBO  
CEO  
Collector-emitter voltage  
6
Emitter-base voltage  
V
V
RN1408  
7
EBO  
RN1409  
15  
Collector current  
RN1407~RN1409  
RN1407~RN1409  
RN1407~RN1409  
RN1407~RN1409  
I
100  
200  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
T
j
T
°C  
stg  
1
2001-06-07  
RN1407,RN1408,RN1409  
Electrical Characteristics (Ta = 25°C)  
Test  
Characteristic  
Symbol  
Test Condition  
= 50V, I = 0  
Min  
Typ.  
Max  
Unit  
nA  
Circuit  
I
I
V
V
V
V
V
ꢀ  
100  
500  
0.15  
0.145  
0.311  
CBO  
CEO  
CB  
CE  
EB  
EB  
EB  
E
Collector cut-off  
RN1407~1409  
current  
= 50V, I = 0  
B
RN1407  
RN1408  
RN1409  
RN1407  
RN1408  
RN1409  
= 6V, I = 0  
C
0.081  
0.078  
0.167  
80  
Emitter cut-off current  
I
mA  
= 7V, I = 0  
C
EBO  
= 15V, I = 0  
C
DC current gain  
h
FE  
ꢀ  
V
I
= 5V, I = 10mA  
C
V
80  
CE  
70  
Collector-emitter  
saturation voltage  
V
= 5mA, I = 0.25mA  
B
0.1  
0.3  
RN1407~1409  
CE (sat)  
C
0.7ꢀ  
1.0  
2.2  
0.5  
0.6  
1.5  
ꢀ  
1.8  
2.6  
5.8  
1.0  
1.16  
2.6  
RN1407  
RN1408  
Input voltage (ON)  
V
V
V
= 0.2V, I = 5mA  
V
I (ON)  
CE  
C
RN1409  
RN1407  
Input voltage (OFF)  
Transition frequency  
V
ꢀ  
= 5V, I = 0.1mA  
C
V
RN1408  
I (OFF)  
CE  
RN1409  
f
ꢀ  
ꢀ  
V
V
= 10V, I = 5mA  
C
250  
RN1407~1409  
MHz  
T
CE  
CB  
Collector Output  
capacitance  
= 10V, I = 0,  
E
C
ob  
ꢀ  
3
6ꢀ  
RN1407~1409  
pFꢀ  
f = 1MH  
z
7
10  
22  
47  
13  
RN1407  
RN1408  
RN1409  
RN1407  
RN1408  
RN1409  
Input resistor  
Resistor ratio  
R1  
ꢀ  
ꢀ  
kꢀ  
ꢀ  
15.4  
32.9  
28.6  
61.1  
0.191 0.213 0.232  
0.421 0.468 0.515  
R1/R2  
1.92  
2.14  
2.35  
2
2001-06-07  
RN1407,RN1408,RN1409  
3
2001-06-07  
RN1407,RN1408,RN1409  
4
2001-06-07  
RN1407,RN1408,RN1409  
Type No.  
RN1407  
Marking  
RN1408  
RN1409  
5
2001-06-07  
RN1407,RN1408,RN1409  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
6
2001-06-07  
This datasheet has been download from:  
www.datasheetcatalog.com  
Datasheets for electronics components.  

RN1408 相关器件

型号 制造商 描述 价格 文档
RN1408(TE85L) TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal 获取价格
RN1408(TE85L,F) TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal 获取价格
RN1408(TE85L2) TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal 获取价格
RN1408(TE85R) TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal 获取价格
RN1408(TE85R2) TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal 获取价格
RN1409 TOSHIBA Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 获取价格
RN1409(TE85L,F) TOSHIBA Small Signal Bipolar Transistor 获取价格
RN1409(TE85L2) TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal 获取价格
RN1409(TE85R) TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal 获取价格
RN1409(TE85R2) TOSHIBA TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal 获取价格

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