RN1112 [TOSHIBA]
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; 开关，逆变电路，接口电路及驱动电路的应用
| 型号： | RN1112 |
| 厂家： | 
TOSHIBA |
| 描述： | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 文件： | 总5页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RN1112,RN1113
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1112, RN1113
and Driver Circuit Applications
Switching, Inverter Circuit, Interface Circuit
Unit: mm
z With built-in bias resistors
z Simplified circuit design
z Reduced number of parts and simplified process
z Complementary to RN2112, RN2113
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
CBO
V
CEO
V
EBO
50
50
V
V
JEDEC
―
―
EIAJ
5
V
TOSHIBA
Weight: 2.4mg
2-2H1A
Collector current
I
100
mA
mW
°C
°C
c
Collector power dissipation
Junction temperature
Storage temperature range
P
100
c
T
150
j
T
stg
−55~150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
= 50 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
―
V
V
V
―
―
―
―
100
100
700
0.3
―
nA
nA
―
CBO
CB
EB
CE
E
I
―
= 5 V, I = 0
C
EBO
DC current gain
h
―
= 5 V, I = 1 mA
120
―
―
FE
CE (sat)
C
Collector-emitter saturation voltage
Translation frequency
V
―
I
= 5 mA, I = 0.25 mA
0.1
250
3
V
C
B
f
―
V
V
= 10 V, I = 5 mA
―
MHz
pF
T
CE
CB
C
―
Collector output capacitance
C
= 10 V, I = 0, f = 1 MHz
E
―
6
ob
RN1112
Input resistor
15.4
32.9
22
47
28.6
61.1
R1
―
―
kΩ
RN1113
1
2007-11-01
RN1112,RN1113
RN1112
RN1112
RN1113
RN1113
2
2007-11-01
RN1112,RN1113
RN1112
RN1112
RN1113
RN1113
3
2007-11-01
RN1112,RN1113
Type Name
RN1112
Marking
RN1113
4
2007-11-01
RN1112,RN1113
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
相关型号：
RN1112(TE85L)
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
RN1112(TE85R)
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
RN1112ACT
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
TOSHIBA
RN1112CT
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
TOSHIBA
RN1112FT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
TOSHIBA
RN1112FV
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
©2020 ICPDF网 联系我们和版权申明