RN1106MFV(TL3PAV) [TOSHIBA]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon;型号: | RN1106MFV(TL3PAV) |
厂家: | TOSHIBA |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |
文件: | 总8页 (文件大小:1034K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RN1101MFV∼RN1106MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101MFV, RN1102MFV, RN1103MFV
RN1104MFV, RN1105MFV, RN1106MFV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
1.2 ± 0.05
z Ultra-small package, suited to very high density mounting
0.80 ± 0.05
z Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
1
z A wide range of resistor values is available for use in various circuits.
z Complementary to the RN2101MFV to RN2106MFV
3
2
Equivalent Circuit and Bias Resistor Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
4.7
10
4.7
10
22
47
47
47
22
1. BASE
47
2. EMITTER
3. COLLECTOR
2.2
4.7
VESM
JEDEC
JEITA
―
―
2-1L1A
TOSHIBA
Weight: 1.5 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
V
50
50
V
V
CBO
CEO
RN1101MFV to 1106MFV
Collector-emitter voltage
RN1101MFV to 1104MFV
Emitter-base voltage
10
V
V
EBO
RN1105MFV, 1106MFV
5
Collector current
I
100
mA
mW
°C
C
Collector power dissipation
RN1101MFV to 1106MFV
Junction temperature
P (Note 1)
150
C
T
150
j
Storage temperature range
T
stg
−55 to 150
°C
Note:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
0.5
Pad Dimension(Reference)
Unit: mm
0.45
1.15
0.4
0.45
Start of commercial production
2005-02
0.4
0.4
1
2014-03-01
RN1101MFV∼RN1106MFV
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
I
I
V
V
= 50 V, I = 0
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
100
500
1.52
0.71
0.33
0.15
0.145
0.138
―
RN1101MFV to
CBO
CB
CE
E
Collector cutoff current
Emitter cutoff current
―
nA
RN1106MFV
= 50 V, I = 0
CEO
B
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
0.82
0.38
0.17
0.082
0.078
0.074
30
V
V
= 10 V, I = 0
C
EB
EB
I
―
mA
EBO
= 5 V, I = 0
C
50
―
70
―
DC current gain
h
―
―
―
V
= 5 V, I = 10 mA
CE C
FE
80
―
80
―
80
―
RN1101MFV to
RN1106MFV
Collector-emitter
saturation voltage
V
I
= 5 mA, I = 0.5 mA
C B
―
0.1
0.3
V
V
CE (sat)
1.1
1.2
1.3
1.5
0.6
0.7
―
―
―
―
―
―
2.0
2.4
3.0
5.0
1.1
1.3
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
Input voltage (ON)
V
V
= 0.2 V, I = 5 mA
I (ON)
CE
C
RN1101MFV to
RN1104MFV
1.0
0.5
―
―
―
1.5
0.8
―
Input voltage (OFF)
V
―
―
V
V
= 5 V, I = 0.1 mA
C
V
I (OFF)
CE
CB
RN1105MFV,
RN1106MFV
RN1101MFV to
RN1106MFV
= 10 V, I = 0,
Collector output
capacitance
E
C
ob
0.7
pF
f = 1 MH
z
3.29
7
4.7
10
6.11
13
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
15.4
32.9
1.54
3.29
22
28.6
61.1
2.86
6.11
Input resistor
R1
―
―
―
―
kΩ
47
2.2
4.7
RN1101MFV to
RN1104MFV
0.8
1.0
1.2
Resistor ratio
R1/R2
RN1105MFV
RN1106MFV
0.0376 0.0468 0.0562
0.08 0.1 0.12
2
2014-03-01
RN1101MFV∼RN1106MFV
RN1101MFV
RN1102MFV
COMMON EMITTER
VCE = 0.2V
INPUT VOLTAGE VI (ON) (V)
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
3
2014-03-01
RN1101MFV∼RN1106MFV
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
4
2014-03-01
RN1101MFV∼RN1106MFV
RN1102MFV
RN1101MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
5
2014-03-01
RN1101MFV∼RN1106MFV
RN1101MFV
RN1102MFV
RN1104MFV
RN1103MFV
RN1105MFV
RN1106MFV
6
2014-03-01
RN1101MFV∼RN1106MFV
Type Name
Marking
RN1101MFV
XA
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
XB
XC
XD
XE
XF
7
2014-03-01
RN1101MFV∼RN1106MFV
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
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•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
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•
•
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
8
2014-03-01
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