RN1103ACT [TOSHIBA]
TRANSISTOR 80 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal;
| 型号： | RN1103ACT |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 80 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal 开关 驱动 |
| 文件： | 总8页 (文件大小：562K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RN1101∼RN1106
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101, RN1102, RN1103,
RN1104, RN1105, RN1106
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z With built-in bias resistors
z Simplified circuit design
z Reduced number of parts and simplified manufacturing process
z Complementary to RN2101~ RN2106
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1101
RN1102
RN1103
RN1104
RN1105
RN1106
4.7
10
4.7
10
22
47
47
47
22
47
2.2
4.7
JEDEC
―
―
EIAJ
TOSHIBA
Weight: 2.4 mg
2-2H1A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Symbol
Rating
Unit
V
V
50
50
V
V
CBO
CEO
RN1101~1106
Collector-emitter voltage
RN1101~1104
RN1105, 1106
10
Emitter-base voltage
V
V
EBO
5
Collector current
I
100
100
150
−55~150
mA
mW
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
P
C
RN1101~1106
T
j
T
stg
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
RN1101∼RN1106
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
= 50 V, I = 0
Min
Typ.
Max
Unit
I
I
V
V
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
100
500
1.52
0.71
0.33
0.15
0.145
0.138
―
CBO
CEO
CB
CE
E
Collector cut-off
RN1101~1106
―
nA
current
= 50 V, I = 0
B
RN1101
RN1102
RN1103
RN1104
RN1105
RN1106
RN1101
RN1102
RN1103
RN1104
RN1105
RN1106
0.82
0.38
0.17
0.082
0.078
0.074
30
V
V
= 10 V, I = 0
C
EB
EB
Emitter cut-off current
I
―
mA
EBO
= 5 V, I = 0
C
50
―
70
―
DC current gain
h
―
―
―
V
= 5 V, I = 10 mA
―
V
FE
CE
C
80
―
80
―
80
―
Collector-emitter
saturation voltage
RN1101~1106
V
I
= 5 mA, I = 0.25 mA
C B
―
0.1
0.3
CE (sat)
1.1
1.2
1.3
1.5
0.6
0.7
1.0
0.5
―
2.0
2.4
3.0
5.0
1.1
1.3
1.5
0.8
―
RN1101
RN1102
―
―
―
―
―
―
―
RN1103
Input voltage (ON)
V
V
= 0.2 V, I = 5 mA
V
I (ON)
CE
C
RN1104
RN1105
RN1106
RN1101~1104
RN1105, 1106
RN1101~1106
Input voltage (OFF)
Transition frequency
V
―
V
= 5 V, I = 0.1 mA
C
V
I (OFF)
CE
―
f
―
―
V
V
= 10 V, I = 5 mA
C
250
MH
z
T
CE
CB
Collector output
capacitance
= 10 V, I = 0,
E
RN1101~1106
C
―
3
6
pF
ob
f = 1 MH
z
3.29
7
4.7
10
6.11
13
RN1101
RN1102
15.4
32.9
1.54
3.29
0.9
22
28.6
61.1
2.86
6.11
1.1
RN1103
Input resistor
Resistor ratio
R1
―
―
kΩ
47
RN1104
2.2
4.7
1.0
RN1105
RN1106
RN1101~1104
RN1105
R1/R2
―
0.0421 0.0468 0.0515
0.09 0.1 0.11
RN1106
2
2007-11-01
RN1101∼RN1106
RN1101
RN1102
RN1103
RN1104
RN1105
RN1106
3
2007-11-01
RN1101∼RN1106
RN1102
RN1101
RN1103
RN1104
RN1105
RN1106
4
2007-11-01
RN1101∼RN1106
RN1101
RN1102
RN1103
RN1104
RN1105
RN1106
5
2007-11-01
RN1101∼RN1106
RN1101
RN1102
RN1103
RN1104
RN1105
RN1106
6
2007-11-01
RN1101∼RN1106
Type Name
Marking
RN1101
RN1102
RN1103
N1104
RN1105
RN1106
7
2007-11-01
RN1101∼RN1106
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
8
2007-11-01
相关型号：
RN1103CT
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
TOSHIBA
RN1103FV
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
RN1103MFV(TL3KYOCE
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
TOSHIBA
RN1103MFV(TL3PAV)
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
TOSHIBA
RN1104(TE85L)
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
RN1104(TE85R)
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
RN1104CT
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
TOSHIBA
©2020 ICPDF网 联系我们和版权申明