MP4009 [TOSHIBA]
Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One); PNP硅三重扩散型（四达林顿功率晶体管一）
| 型号： | MP4009 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One) |
| 文件： | 总5页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MP4009
TOSHIBA Power Transistor Module
Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One)
MP4009
Industrial Applications
High Power Switching Applications
Unit: mm
Hammer Drive, Pulse Motor Drive
Inductive Load Switching
•
•
Small package by full molding (SIP 10 pins)
High collector power dissipation (4-device operation)
: P = 4 W (Ta = 25°C)
T
•
•
•
High collector current: I
High DC current gain: h
= −5 A (max)
C (DC)
= 1000 (min) (V
= −3 V, I = −3 A)
FE
CE
C
Complementary to MP4003
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
V
−100
−100
−5
V
V
V
CBO
CEO
EBO
JEDEC
JEITA
―
―
DC
Pulse
I
−5
C
Collector current
A
A
TOSHIBA
2-25A1A
I
−8
CP
Weight: 2.1 g (typ.)
Continuous base current
I
B
−0.1
Collector power dissipation
(1 device operation)
P
2.0
4.0
W
C
Collector power dissipation
(4 devices operation)
P
W
T
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
stg
−55 to 150
Array Configuration
R1 R2
1
10
2
4
6
8
3
5
7
9
R1 ≈ 5 kΩ, R2 ≈ 120 Ω
1
2004-07-01
MP4009
Thermal Characteristics
Characteristics
Symbol
Max
31.3
Unit
Thermal resistance from junction to
ambient
ΣR
th (j-a)
°C/W
(4-device operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
T
L
260
°C
(3.2 mm from case for 10 s)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= −100 V, I = 0 A
Min
Typ.
Max
Unit
Collector cut-off current
I
I
I
V
V
V
―
―
―
―
―
―
―
―
―
―
―
―
40
−10
−10
−2.0
―
µA
µA
mA
V
CBO
CEO
EBO
CB
CE
EB
E
Collector cut-off current
= −100 V, I = 0 A
B
Emitter cut-off current
= −5 V, I = 0 A
−0.3
−100
−100
1000
1000
―
C
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V
V
I
= −1 mA, I = 0 A
E
(BR) CBO
(BR) CEO
C
C
I
= −30 mA, I = 0 A
―
V
B
h
h
V
CE
V
CE
= −3 V, I = −0.5 A
―
FE (1)
C
DC current gain
―
= −3 V, I = −3 A
―
FE (2)
C
Collector-emitter
Saturation voltage
V
I
C
I
C
= −3 A, I = −12 mA
−2.0
−2.5
―
CE (sat)
BE (sat)
B
V
Base-emitter
V
= −3 A, I = −12 mA
―
B
Transition frequency
f
V
CE
V
CB
= −3 V, I = −0.5 A
3
MHz
pF
T
C
Collector output capacitance
C
ob
= 50 V, I = 0 A, f = 1MHz
―
―
E
Output
Turn-on time
t
―
―
―
0.5
3.0
2.0
―
―
―
on
I
I
B2
B1
Input
Switching time
µs
Storage time
Fall time
t
stg
V
CC
= −30 V
20 µs
t
f
−I = I = 12 mA, duty cycle ≤ 1%
B1
B2
Marking
Part No. (or abbreviation code)
Lot No.
MP4009
JAPAN
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-07-01
MP4009
I
– V
I – V
C BE
C
CE
Common
emitter
−30
−100
Common emitter
= −3 V
−8
−6
−4
−2
0
−15
−7
−8
−6
−4
−2
0
V
CE
Ta = 25°C
−3
−1
−55
25
Ta = 100°C
I
= −0.3 mA
B
0
0
−2
−4
−6
−8
−10
0
−0.8
−1.6
−2.4
−3.2
(V)
−4.0
Collector-emitter voltage
V
(V)
Base-emitter voltage
V
CE
BE
h
FE
– I
C
V – I
CE B
10000
Ta = 100°C
25
Common
emitter
Common emitter
= −3 V
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
5000
3000
V
CE
Ta = 25°C
−8
−7
−6
−55
1000
500
300
−5
−4
−3
−2
−1
100
50
I
= −0.1 A
C
−0.05 −0.1
−0.3
−1
−3
−10
−30
−0.1
−0.3
−1
−3
−10
−30
−100 −300 −500
Collector current
I
C
(A)
Base current
I
(mA)
B
V
– I
C
V
– I
CE (sat)
BE (sat) C
−10
−10
Common emitter
/I = 250
Common emitter
I
I /I = 250
C B
C
B
−5
−3
−5
−3
Ta = −55°C
25
Ta = −55°C
−1
−1
100
25
−0.5
−0.3
−0.5
−0.3
100
−0.1
−0.3
−1
−3
−10
−0.1
−0.3
−1
−3
(A)
−10
Collector current
I
C
(A)
Collector current I
C
3
2004-07-01
MP4009
r
– t
w
th
300
100
Curves should be applied in thermal
limited area. (Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
(4)
(3)
(2)
(1)
30
10
3
1
-No heat sink/Attached on a circuit board-
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
Circuit board
100
(4) 4-device operation
0.3
0.001
0.01
0.1
1
10
1000
Pulse width
t
w
(s)
Safe Operating Area
P
T
– Ta
−30
−10
8
6
4
2
0
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
I
C
max (pulsed)*
Attached on a circuit board
1 ms*
10 ms*
100 µs*
−5
−3
(4)
(3)
Circuit board
(2)
(1)
−1
−0.5
−0.3
0
40
80
120
160
200
Ambient temperature Ta (°C)
−0.1
*: Single nonrepetitive pulse
Ta = 25°C
−0.05
−0.03
Curves must be derated linearly
with increase in temperature.
V
max
CEO
−1
−3
−10
−30
−100 −200
(V)
Collector-emitter voltage
V
CE
∆T – P
j
T
160
120
80
(1)
(2)
(3) (4)
Circuit board
Attached on a circuit board
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
40
0
0
1
2
3
4
5
Total power dissipation
P
T
(W)
4
2004-07-01
MP4009
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
5
2004-07-01
相关型号：
MP4009_07
High Power Switching Applications Hammer Drive, Pulse Motor Drive Inductive Load Switching
TOSHIBA
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