GT60N321 [TOSHIBA]
High Power Switching Applications The 4th Generation; 高功率开关应用的第四代
| 型号： | GT60N321 |
| 厂家： | 
TOSHIBA |
| 描述： | High Power Switching Applications The 4th Generation |
| 文件： | 总7页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High Power Switching Applications
The 4th Generation
Unit: mm
·
·
·
FRD included between emitter and collector
Enhancement-mode
High speed IGBT : t = 0.25 µs (typ.) (I = 60 A)
f
C
FRD : t = 0.8 µs (typ.) (di/dt = −20 A/µs)
rr
·
Low saturation voltage: V = 2.3 V (typ.) (I = 60 A)
CE (sat) C
Maximum Ratings (Ta = 25°C)
Characteristics
symbol
Rating
Unit
Collector-Emitter Voltage
Gate-Emitter Voltage
V
V
1000
±25
60
V
V
CES
GES
DC
Collector Current
1 ms
I
C
A
I
120
15
CP
JEDEC
JEITA
―
―
DC
I
ECF
Emitter-Collector
A
Forward Current
1 ms
I
120
ECFP
TOSHIBA
2-21F2C
Collector Power Dissipation
P
170
W
C
(Tc = 25°C)
Weight: 9.75 g (typ.)
Junction Temperature
Storage Temperature
Screw Torque
T
150
-55~150
0.8
°C
°C
j
T
stg
¾
N･m
ꢀ
Equivalent Circuit
Collector
Gate
Emitter
1
2002-01-18
GT60N321
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate Leakage Current
Symbol
Test Condition
= ±25 V, V = 0
Min
Typ.
Max
Unit
I
I
V
V
¾
¾
3.0
¾
¾
¾
¾
¾
±500
1.0
6.0
2.3
2.8
¾
nA
mA
V
GES
GE
CE
CE
Collector Cut-off Current
= 1000 V, V
= 0
GE
CES
Gate-Emitter Cut-off Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
V
I
I
I
= 60 mA, V = 5 V
¾
GE (OFF)
C
C
C
CE
V
V
(1)
= 10 A, V
= 60 A, V
= 15 V
= 15 V
1.6
2.3
4000
V
CE (sat)
CE (sat)
GE
GE
(2)
V
C
ies
V
= 10 V, V = 0, f = 1 MHz
GE
pF
CE
Rise Time
t
¾
¾
¾
0.23
0.33
0.25
¾
¾
r
Turn-on Time
t
t
51 W
on
Fall Time
t
f
0.40
Switching Time
ms
15 V
0
600 V
-15 V
= 0
Turn-off Time
¾
0.70
¾
off
Emitter-Collector Forward Voltage
Reverse Recovery Time
Thermal Resistance
V
I
I
= 15 A, V
GE
¾
¾
¾
¾
1.5
0.8
¾
2.0
2.5
V
ECF
EC
t
= 15 A, V = 0, di/dt = -20 A/ms
GE
ms
rr
F
R
R
¾
0.74
4.0
°C/W
°C/W
th(j-c)
th(j-c)
Thermal Resistance
¾
¾
2
2002-01-18
GT60N321
I
– V
V
– V
CE GE
C
CE
100
80
10
8
Common
emitter
Tc = 25°C
Common
emitter
Tc = -40°C
25 V
20 V
10 V
80
15 V
6
4
2
0
60
40
V
GE
= 7 V
30
60
20
0
I
= 10 A
C
0
1
2
3
4
5
25
8
0
5
10
15
20
25
Collector-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
CE
GE
V
– V
V
– V
CE GE
CE
GE
10
8
10
8
Common
emitter
Tc = 25°C
Common
emitter
Tc = 125°C
80
80
6
4
2
0
6
4
2
0
60
60
30
I
= 10 A
30
C
I
= 10 A
C
0
5
10
15
20
0
5
10
15
20
25
Gate-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
GE
GE
I
– V
V – Tc
CE (sat)
C
GE
100
80
4
3
2
1
Common
emitter
Common
Emitter
V
GE
= 15 V
V
CE
= 5 V
80
60
60
40
20
0
30
25
I
= 10 A
C
40
T
2
= 125°C
C
0
0
4
6
-40
0
40
80
120
160
Gate-emitter voltage
V
(V)
Case temperature Tc (°C)
GE
3
2002-01-18
GT60N321
V
, V
CE GE
– Q
Switching time – R
G
G
20
16
12
8
10
Common
emitter
Common emitter
V
= 600 V
= 60 A
= ±15 V
= 25°C
CC
R
L
= 2.5 W
= 25°C
I
V
T
C
GG
T
C
C
t
t
off
on
V
CE
= 150 V
1
t
r
t
f
100 V
50 V
4
0
0.1
0
50
100
150
200
250
300
(nC)
350
400
1
10
Gate resistance
100
1000
Gate charge
Q
R
(W)
G
G
Switching Time – I
C – V
C
CE
10
10000
1000
100
Common emitter
Common emitter
V = 0 V
V
R
= 600 V
= 51 W
CC
G
GE
f = 1 MHz
T = 25°C
C
C
ies
V
= ±15 V
GG
T
= 25°C
C
1
t
t
off
on
C
oes
t
C
f
res
10
1
10
100
1000
10000
t
r
Collector-emitter voltage
V
(V)
CE
0.1
0
20
40
60
(A)
80
Collector current
I
C
Reverse Bias SOA
300
100
Safe Operating Area
<
T
125°C
=
j
V
R
= ±15 V
= 10 W
GE
G
1000
100
10
50
30
I
max (Pulsed)*
C
C
I
max
(Continuous)
10 ms*
DC
100 ms*
1 ms*
10 ms*
10
Operation
* Single
non-repetitive
pulse Tc = 25°C
curves must be
derated linearly
with increase in
temperature.
5
3
1
1
1
30
100
300
1000
(V)
3000
1
10
100
1000 3000
(V)
Collector- emitter voltage
V
Collector-emitter voltage
V
CE
CE
4
2002-01-18
GT60N321
R
– t
I
– V
ECF ECF
th (t)
w
3
2
1
0
1
2
10
10
10
100
80
Common
collector
Tc = 25°C
Diode Stage
60
40
10
IGBT Stage
-
10
-40
-
10
10
20
0
Tc = 125°C
3
-
25
5
-
4
-
3
-
2
-
1
0
1
2
-
10
10
10
10
10
10
(s)
10
10
0.0
0.5
1.0
1.5
2.0
2.5
Pulse width
t
w
Collector-emitter forward voltage
V
(V)
ECF
I , t – I
rr rr
I , t – di/dt
rr rr
ECF
10
2
50
40
30
20
10
0
1
Common emitter
di/dt = -20 A/ms
Tc = 25°C
Common emitter
= 60 A
Tc = 25°C
I
t
ECF
rr
9
8
7
6
5
1.6
1.2
0.8
0.4
0
0.8
0.6
0.4
0.2
0
t
I
rr
rr
0
20
40
60
80
100
0
50
100
150
200
250
Emitter-collector forward current
I
(A)
di/dt (A/ms)
ECF
5
2002-01-18
GT60N321
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-01-18
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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