DF2S12P1CT [TOSHIBA]

Trans Voltage Suppressor Diode;


型号：	DF2S12P1CT
厂家：	TOSHIBA
描述：	Trans Voltage Suppressor Diode 二极管
文件：	总6页 (文件大小：162K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DF2S12P1CT

ESD Protection Diodes Silicon Epitaxial Planar

DF2S12P1CT

1. General

The DF2S12P1CT is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device

interfaces and other applications to protect against static electricity and noise.

The DF2S12P1CT has realized high IPP, in order to protect a semiconductor devices from the indirect lightning

stroke and the transition voltage (at the time of power activation).

Furthermore, the DF2S12P1CT is housed in an ultra-compact package (1.0 mm × 0.6 mm) to meet applications

that require a small footprint.

2. Applications

Mobile Equipment

 Smartphones

 Tablets

 Notebook PCs

Desktop PCs

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

3. Features

(1) Suitable for use with a 10 V signal line. (VRWM ≤ 10 V)

(2) Protects devices with its high ESD performance.

(VESD = ±30 kV (Contact / Air) @IEC61000-4-2)

(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.

(RDYN = 0.58 Ω (typ.))

(4) Low clamping voltage characteristic protects semiconductor devices from static electricity and noise.

(VC = 25 V@IPP = 7.5 A (typ.))

(5) Compact package is suitable for use in high density board layouts such as in mobile devices.

(1.0 mm × 0.6 mm size (Nickname: CST2))

4. Packaging

CST2

Start of commercial production

2018-06

2018-07-03

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

DF2S12P1CT

5. Example of Circuit Diagram

6. Quick Reference Data

Characteristics

Symbol

Note

Test Condition

Min

Typ.

Max

Unit

Working peak reverse voltage

Dynamic resistance

VRWM (Note 1)



0.58



Ω

RDYN

VESD

(Note 2)

(Note 3)

Electrostatic discharge voltage

(IEC61000-4-2) (Contact)

Note 1: Recommended operating condition.

Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of

dynamic resistance using least squares fit of TLP characteristics between IPP1 = 16 A and IPP2 = 30 A.

Note 3: Criterion: No damage to devices.

7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Note

Rating

Unit

Electrostatic discharge voltage (IEC61000-4-2) (Contact)

Electrostatic discharge voltage (IEC61000-4-2) (Air)

Peak pulse power (tp = 8/20 µs)

VESD

(Note 1)

±30

PPK

IPP

240

Peak pulse current (tp = 8/20 µs)

Junction temperature

(Note 2)

7.5

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: According to IEC61000-4-2.

Note 2: According to IEC61000-4-5.

Toshiba Electronic Devices & Storage Corporation

2018-07-03

Rev.1.0

DF2S12P1CT

8. Electrical Characteristics (Unless otherwise specified, Ta = 25 )

VRWM: Working peak reverse voltage

VBR: Reverse breakdown voltage

IBR: Reverse breakdown current

IR: Reverse current

VC: Clamp voltage

IPP: Peak pulse current

RDYN: Dynamic resistance

Fig. 8.1 Definitions of Electrical Characteristics

Characteristics

Symbol

Note

Test Condition

Min

Typ.

Max

Unit

Working peak reverse voltage

Total capacitance

VRWM

(Note 1)



Ω

VR = 0 V, f = 1 MHz

Dynamic resistance

Reverse breakdown voltage

Reverse current

RDYN

VBR

(Note 2)



0.58



IBR = 1 mA

10.5



14.5

0.1



VRWM = 10 V



µA

Clamp voltage

(Note 3) IPP = 1 A

IPP = 7.5 A



(Note 2) ITLP = 16 A

ITLP = 30 A



Note 1: Recommended operating condition.

Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of

dynamic resistance using least squares fit of TLP characteristics between IPP1 = 16 A and IPP2 = 30 A.

Note 3: Based on IEC61000-4-5 8/20 µs pulse.

9. Internal Circuit

1: Cathode

2: Anode

2018-07-03

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

DF2S12P1CT

10. Marking (Top view)

11. Land Pattern Dimensions (for reference only)

Unit: mm

Toshiba Electronic Devices & Storage Corporation

2018-07-03

Rev.1.0

DF2S12P1CT

Package Dimensions

Unit: mm

Weight: 0.7 mg (typ.)

Package Name(s)

Nickname: CST2

Toshiba Electronic Devices & Storage Corporation

2018-07-03

Rev.1.0

DF2S12P1CT

RESTRICTIONS ON PRODUCT USE

Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA".

Hardware, software and systems described in this document are collectively referred to as "Product".

•

TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.

This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's

written permission, reproduction is permissible only if reproduction is without alteration/omission.

•

ThoughTOSHIBAworkscontinuallytoimproveProduct'squalityandreliability,Productcanmalfunctionorfail.Customersareresponsible

for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which

minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage

to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate

the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA

information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the

precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application

with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,

including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating

and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample

application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.

TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.

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PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE

EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY

CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT

("UNINTENDEDUSE").Exceptforspecificapplicationsasexpresslystatedinthisdocument, UnintendedUseincludes, withoutlimitation,

equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles,

trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices,

elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR

UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales

representative.

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Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any

applicable laws or regulations.

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FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER,

INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING

WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND

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OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR

PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

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for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products

(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and

regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration

Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all

applicable export laws and regulations.

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING

AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

Toshiba Electronic Devices & Storage Corporation

2018-07-03

Rev.1.0

DF2S12P1CT [TOSHIBA]

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