2SK882-GR [TOSHIBA]
暂无描述;
| 型号： | 2SK882-GR |
| 厂家： | 
TOSHIBA |
| 描述： | 暂无描述 晶体 射频放大器 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 |
| 文件： | 总6页 (文件大小：631K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK882
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK882
FM Tuner, VHF RF Amplifier Applications
Unit: mm
•
•
•
•
Low reverse transfer capacitance: C = 0.025 pF (typ.)
rss
Low noise figure: NF = 1.7dB (typ.)
High power gain: G = 28dB (typ.)
ps
Recommend operation voltage: 5~15 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
V
20
±5
V
V
DS
Gate-source voltage
Drain current
GS
I
30
mA
mW
°C
D
Drain power dissipation
Channel temperature
Storage temperature
P
100
D
T
ch
125
T
stg
−55~125
°C
JEDEC
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
SC-70
TOSHIBA
2-2E1C
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= 0, V
= ±5 V
⎯
⎯
⎯
±50
nA
V
GSS
DS
GS
GS
Drain-source voltage
V
= −4 V, I = 100 μA
20
⎯
DSX
D
I
DSS
Drain current
V
= 10 V, V
= 0
3
⎯
14
mA
DS
GS
(Note)
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
V
V
V
= 10 V, I = 100 μA
⎯
⎯
⎯
⎯
20
⎯
⎯
10
−2.5
⎯
V
GS (OFF)
⎪Y ⎪
DS
DS
D
= 10 V, V
= 10 V, V
= 0, f = 1 kHz
= 0, f = 1 MHz
mS
pF
pF
dB
dB
fs
GS
GS
C
3.0
4.3
0.04
⎯
iss
rss
V
V
DS
DS
Reverse transfer capacitance
Power gain
C
0.025
28
G
ps
= 10 V, f = 100 MHz (Figure 1)
Noise figure
NF
1.7
3.0
Note: I
classification Y: 3.0~7.0 mA, GR: 6.0~14.0 mA
DSS
1
2007-11-01
2SK882
L1: 1.0 mmφ silver plated copper wire 4.0 T, 8 mmφ ID TAP at 1.0 T from coil end
L2: 1.0 mmφ silver plated copper wire 3.0 T, 8 mmφ ID, 10 mm length
Figure 1 G , NF Test Circuit
ps
Marking
2
2007-11-01
2SK882
3
2007-11-01
2SK882
4
2007-11-01
2SK882
5
2007-11-01
2SK882
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01
相关型号：
2SK882-GRTE85L
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
TOSHIBA
2SK882-GRTE85R
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
TOSHIBA
2SK882-YTE85L
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
TOSHIBA
2SK882-YTE85R
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
TOSHIBA
2SK882GRTE85L
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
TOSHIBA
2SK882GRTE85R
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
TOSHIBA
2SK882TE85L
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
TOSHIBA
2SK882TE85R
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
TOSHIBA
2SK882YTE85L
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
TOSHIBA
©2020 ICPDF网 联系我们和版权申明