2SK3700(F) [TOSHIBA]
MOSFET N-CH 900V 5A SC-67;型号: | 2SK3700(F) |
厂家: | TOSHIBA |
描述: | MOSFET N-CH 900V 5A SC-67 |
文件: | 总6页 (文件大小:224K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK3700
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
2SK3700
Switching Regulator Applications
Unit: mm
•
•
•
•
Low drain-source ON-resistance: R
= 2.0 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 4.5 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 720 V)
DS
DSS
Enhancement model: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
900
900
±30
5
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC (Note 1)
Pulse (Note 1)
I
D
Drain current
A
1. GATE
I
15
DP
2. DRAIN (HEAT SINK)
3. SOURCE
Drain power dissipation (Tc=25°C)
Single pulse avalanche energy
P
150
W
D
E
I
351
mJ
AS
JEDEC
JEITA
―
―
(Note 2)
Avalanche current
5
15
A
AR
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
TOSHIBA
2-16C1B
T
150
ch
Weight: 4.6 g (typ.)
Storage temperature range
T
stg
−55 to150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
0.833
50
°C/W
°C/W
th (ch-c)
R
th (ch-a)
Note 1: Ensure that the temperature does not exceed 150℃.
Note 2: = 90 V, T = 25°C (initial), L = 25.7mH, R = 25 Ω, I = 5 A
AR
V
DD
ch
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Start of commercial production
2002-06
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2SK3700
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±25 V, V = 0 V
Min
Typ.
Max
Unit
I
V
⎯
±30
⎯
⎯
―
±10
―
μA
V
GSS
GS
DS
Gate-source breakdown voltage
Drain cut-OFF current
V
V
I = ±10μA, V = 0V
G
(BR) GSS
DS
100
⎯
I
V
= 720 V, V
= 0 V
⎯
μA
V
DSS
DS
GS
Drain-source breakdown voltage
Gate threshold voltage
IG = 10mA, V
= 0 V
900
2.0
⎯
⎯
(BR) DSS
GS
= 10 V, I = 1 mA
V
V
V
V
⎯
4.0
2.5
⎯
V
th
DS
GS
DS
D
Drain-source ON resistance
R
= 10 V, I = 3 A
2.0
4.5
1150
20
Ω
S
DS (ON)
D
⎪Y ⎪
fs
= 20 V, I = 3 A
2.0
⎯
Forward transfer admittance
Input capacitance
D
C
C
⎯
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
⎯
⎯
DS
rss
C
oss
⎯
100
⎯
Output capacitance
Rise time
10 V
GS
I = 3 A
D
t
⎯
⎯
⎯
⎯
⎯
30
70
⎯
⎯
⎯
⎯
⎯
r
V
V
OUT
0 V
Turn-ON time
Switching time
t
on
R
L
= 133 Ω
Fall time
t
f
60
V
≒400 V
DD
Turn-OFF time
t
170
28
Duty ≤ 1%, t = 10 μs
off
w
Total gate charge
(gate-source plus gate-drain)
Q
g
V
≒400 V, V
DD
= 10 V, I = 5 A
GS D
nC
Q
Gate-source charge
⎯
⎯
17
11
⎯
⎯
gs
Q
gd
Gate-drain (“miller”) charge
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
I
Continuous drain reverse current (Note 1)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
15
A
A
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 5 A, V
= 5 A, V
= 0 V
⎯
−1.7
⎯
V
DSF
DR
DR
GS
t
= 0 V,
900
5.4
ns
μC
rr
GS
dI /dt = 100 A/μs
DR
Q
⎯
rr
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
TOSHIBA
K3700
Part No. (or abbreviation code)
Lot No.
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Note 4
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2SK3700
I
– V
I
– V
D
DS
6
D
DS
5
4
3
2
6
5
4
3
2
1
0
Common source
Tc = 25°C
Pulse Test
8
Common source
Tc = 25°C
Pulse Test
10
5.5
5.25
6
8
10
5.5
5.25
5
5
4.75
4.75
1
0
V
= 4.5 V
GS
20
V
= 4 .5V
GS
0
4
8
12
16
0
10
20
30
24
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
V
– V
DS GS
GS
10
8
20
Common source
= 10 V
Common source
Tc = 25°C
Pulse Test
V
DS
Pulse Test
14
12
8
I
= 5 A
D
6
4
3
Tc = −55°C
1.5
100
4
2
25
0
0
0
0
2
4
6
8
10
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
⎪Y ⎪ – I
fs
R
– I
DS (ON) D
D
10
10
Common source
= 10 V
V
DS
Pulse Test
Tc = −55°C
25
5
3
100
1
V
= 10 V、15V
GS
Common source
Tc = 25°C
V
= 10 V
GS
Pulse Test
0.1
0.1
1
0.01
1
10
0.1
1
10
Drain current
I
(A)
D
Drain current
I
(A)
D
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2SK3700
R
– Tc
I
– V
DS (ON)
DR
DS
10
8
10
COMMON SOURCE
Tc = 25°C
COMMON SOURCE
PULSE TEST
5
3
PULSE TEST
6
I
= 5A
D
1
3
4
0.5
0.3
1.5
V
= 10 V
GS
10
2
1
V
= 0, −1 V
GS
−0.8
3
0
−80
0.1
0
−40
0
40
80
120
160
−0.4
−1.2
−1.6
CASE TEMPERATURE Tc (°C)
DRAIN-SOURCE VOLTAGE
V
(V)
DS
CAPACITANCE – V
V
– Tc
th
DS
10000
1000
5
4
C
iss
3
2
1
C
oss
100
10
COMMON SOURCE
= 10 V
COMMON SOURCE
= 0 V
V
DS
= 1 mA
V
GS
C
rss
I
D
f = 1 MHz
Tc = 25°C
PULSE TEST
0
−80
0.1
1
3
5
10
30 50 100
−40
0
40
80
120
160
DRAIN-SOURCE VOLTAGE
V
(V)
CASE TEMPERATURE Tc (°C)
DS
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
P
− Tc
D
200
500
400
300
200
100
0
20
16
12
8
V
DS
150
V
= 100 V
DD
400
100
50
0
200
V
GS
COMMON SOURCE
= 5 A
I
D
4
Tc = 25°C
PULSE TEST
0
0
10
20
30
0
40
80
120
160
200
40
TOTAL GATE CHARGE
Q
g
(nC)
CASE TEMPERTATURE Tc (°C)
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2SK3700
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.05
0.02
0.1
P
DM
t
SINGLE PULSE
0.01
T
0.01
Duty=t/T
R
= 0.833°C/W
th (ch-c)
0.001
10μ
100μ
1m
10m
100m
1
10
PULSE WIDTH
t
w
(s)
E
AS
– T
ch
SAFE OPERATING AREA
500
100
10
I
max (PULSED) *
D
400
300
200
100
100 μs *
I
max (CONTINUOUS) *
D
1 ms *
DC OPERATION
1
0.1
Tc = 25°C
※
SINGLE NONREPETITIVE PULSE
Tc=25℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0
25
V
max
DSS
50
75
100
125
150
0.01
1
10
100
1000
10000
CHANNEL TEMPERATURE (INITIAL)
(°C)
T
ch
ドレイン・ソース間電圧
V
(V)
DS
B
VDSS
15 V
I
AR
−15 V
V
V
DD
DS
B
TEST CIRCUIT
WAVE FORM
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
2
R
V
= 25 Ω
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 90 V, L = 25.7mH
B
VDSS
DD
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2SK3700
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
•
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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