2SK211-GR [TOSHIBA]
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236, 2-3F1C, S-MINI, SC-59, 3 PIN, FET RF Small Signal;
| 型号： | 2SK211-GR |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236, 2-3F1C, S-MINI, SC-59, 3 PIN, FET RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：715K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK211
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK211
FM Tuner Applications
VHF Band Amplifier Applications
Unit: mm
•
•
•
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
High forward transfer admitance: |Y | = 9 mS (typ.)
fs
Extremely low reverse transfer capacitance: C = 0.1 pF (typ.)
rss
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Symbol
Rating
Unit
V
−18
10
V
GDO
Gate current
I
mA
mW
°C
G
Drain power dissipation
Junction temperature
Storage temperature range
P
150
D
T
j
125
T
stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
SC-59
TOSHIBA
2-3F1C
Weight: 0.012 g (typ.)
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= −0.5 V, V = 0 V
Min
Typ.
Max
Unit
I
V
⎯
⎯
⎯
−10
nA
V
GSS
GS
= −100 μA
DS
Gate-drain breakdown voltage
V
I
−18
⎯
(BR) GDO
G
I
DSS
(Note)
Drain current
V
= 0 V, V = 10 V
DS
1.0
⎯
10
mA
GS
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
V
V
V
V
V
V
V
= 10 V, I = 1 μA
−0.4
⎯
⎯
9
−4.0
⎯
V
GS (OFF)
⎪Y ⎪
DS
GS
DS
GD
DD
DD
D
= 0 V, V = 10 V, f = 1 kHz
DS
mS
pF
pF
dB
dB
fs
C
= 10 V, V
= 0 V, f = 1 MHz
GS
⎯
6.0
⎯
⎯
iss
rss
PS
Reverse transfer capacitance
Power gain
C
G
= −10 V, f = 1 MHz
⎯
0.15
⎯
= 10 V, f = 100 MHz (Figure)
= 10 V, f = 100 MHz (Figure)
⎯
18
2.5
Noise figure
NF
⎯
3.5
Note: I
classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR (G): 5.0~10.0 mA
DSS
1
2007-11-01
2SK211
L : 0.8 mmφ Ag PLATED Cu WIRE 3 TURNS, 10 mm ID, 10 mm LENGTH
1
L : 0.8 mmφ Ag PLATED Cu WIRE 3.5 TURNS, 10 mm ID, 10 mm LENGTH
2
Figure 100 MHz G , NF Test Circuit
PS
2SK211 is measured at each group by changing R .
s
Group
RS (Ω)
2SK211-O
2SK211-Y
2SK211-GR
0
18 Ω ± 5%
100 Ω ± 5%
2
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2SK211
3
2007-11-01
2SK211
4
2007-11-01
2SK211
5
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2SK211
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01
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