2SK1378 [TOSHIBA]
TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power;型号: | 2SK1378 |
厂家: | TOSHIBA |
描述: | TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power 局域网 开关 脉冲 晶体管 |
文件: | 总45页 (文件大小:1424K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2004-3
PRODUCT GUIDE
Power MOSFETs
semiconductor
http://www.semicon.toshiba.co.jp/eng
2004
C
O
N
T
E
N
T
S
1 Features and Structure ..........................................................4
2 New Power MOSFET Products .............................................5
3 Selection Guide ................................................................6 - 9
4 Power MOSFET Characteristics
3. TFP Series...............................................................18 - 21
9. π-MOSV Series (VDSS = 150 to 250 V) ............................28
10. π-MOSV Series (VDSS = 400 to 700 V) ...........................29
11. High-Speed π-MOSV Series (VDSS = 450 to 600 V) .........30
12. π-MOSIII /IV Series (VDSS = 800 to 1000 V)....................31
5 Power MOSFET Modules ....................................................32
6 Product List...................................................................33 - 36
7 Superseded Products ...................................................37 - 38
8 Final-Phase and Discontinued Products .............................38 - 39
4. TO-220SIS π-MOSIV/VI Series ..................................22 - 23
2
5. L -π-MOSV......................................................................24 - 25
9 Package List .................................................................40 - 47
6. 2.5-V Drive π-MOSV..............................................................25
7. U-MOSIII Series (Trench Type).......................................26
8. π-MOSVII Series .............................................................27
1. SOP Series ...............................................................10 - 15
2. VS Series..................................................................16 - 17
2
3
Features and Structure
Power MOSFETs
All power MOSFETs have the following features:
1) No carrier storage effect
Drain
Superior frequency and switching characteristics
2) Rugged without current concentration
3) Low drive power due to voltage-controlling device
4) Easy parallel connection
Gate
Protection
zener diode
Source
ꢀꢀToshiba Power MOSFETs have the following
additional features:
1) Guaranteed avalanche withstand capability
2) Improved the function of built-in diodes
3) High ruggedness
No absorber circuit required
ꢀ
greatly expands the possibility of circuit design
ꢀ
enables to take better margin for circuit design
ꢀ
4) High-speed switching
contributes to equipment's high-speed operation
ꢀ
5) Low R(DS)ON
reduces power consumption of equipment
ꢀ
6) Downsized packages
enable equipment's size to be compact and thin
ꢀ
7) Low drive loss
reduces power consumption of equipment
ꢀ
ꢀ
8) Zener diode between gate and source
Improved electrostatic withstand between gate and source
ꢀꢀStructure of Toshiba Power MOSFETs
Double-Diffusion Structure
ꢀ π-MOS
Source
Gate
Toshiba Power MOSFETs use the double-diffusion MOS (D-MOS)
structure, which produces a high-withstand voltage, to form channels.
This structure is especially well suited to high-withstad voltage and
high-current devices.
A high level of integration yields a high-performance power MOSFET
with low On-resistance and low power loss.
n+
n+
P
P
n-
n+
Drain
ꢀ U-MOS
Trench Structure
Higher channel density is achieved by connecting channel vertically
as having a U-groove at the gate region and this structure reduces
On-resistance to lower than other MOSFET structures. This is an
ideal for low-voltage power MOSFETs.
Source
Gate
n+
n+
P
P
n-
n+
Drain
4
New Power MOSFET Products
New Power MOSFET Products
All products have a protection zener diode between gate and source.
Avalanche withstand capability in single and series Power MOSFET products
SOP Series VDSS = 20 V to 60 V
VS and PS Series VDSS = 12 to 30 V
SOP Series products are compact and thin, and require only a small
mounting area. They are suitable for lithium-ion secondary battery
protection circuits and for notebook PCs.
VS Series and PS Series products are very compact and thin, and
suitable for various items of portable electronic devices.
ꢀ
ꢀ
ꢀ
ꢀLithium-ion secondary battery protection circuits
ꢀNotebook PCs
ꢀPortable electronic devices
ꢀ
ꢀ
ꢀPortable phones
ꢀNotebook PCs
ꢀꢀPortable electronic devises
Applica-
tions
Applica-
tions
TFP (Thin Flat Package) Series
TO-220SIS Series VDSS = 450 to 900 V
TFP (Thin Flat Package) Series is comprised of new high-
performance devices with a 4-pin structure for separating input and
output. TFP Series devices have the same ratings as existing
TO-220SM package devices; however, the volume of them occupies
only 42% of the volume of TO-220SM package devices.
This series downsized 2.8-mm package height compared to the
conventional package, TO220NIS. In addition, the chip design
optimization, π-MOS IV / VI Series housed in this new package,
reduced Qg characteristics.
ꢀ
ꢀ
ꢀ
ꢀDC-DC converters
ꢀMotor drives
ꢀSwitching power supplies
ꢀꢀAC adapters
ꢀ
ꢀ
ꢀ
ꢀDC-DC converters
ꢀPDP drivers
ꢀMotor drivers
Applica-
tions
Applica-
tions
U-MOS III Series VDSS = 40 V to 100 V
High-integration is achieved using trench structure technique. Low-
voltage driving (VGS = 4 V) is possible because of ultra-low On-
resistance.
π-MOS VII Series VDSS = 100 V
With employing submicron technology and reducing gate charge,
this latest series realized extremely fast speed and low RDS(ON)
.
ꢀꢀDigital amps
ꢀꢀDC-DC converters
ꢀꢀMotor drivers
ꢀ
ꢀ
ꢀ
ꢀDC-DC converters
ꢀMotor drives
ꢀSolenoids and lamp drives
Applica-
tions
Applica-
tions
π-MOS
V
Series VDSS = 150 V to 250 V
π-MOS V High-Speed Series VDSS = 250 V to 600 V
π-MOS V High-Speed Series is new product series and achieves
faster switching speed than π-MOS V Series which are currently
well-established in the marketplace.
The π-MOS Series is comprised of low-cost devices which are ideal
for use in monitors, especially for frequency control and S-shape
correction.
Two types of series are available:
High-Speed Switching Series
High-Speed Diode Series
ꢀ
ꢀ
ꢀ
ꢀMonitors
ꢀDC-DC converters
ꢀPDP drives
ꢀ
ꢀ
ꢀInverters
ꢀMotor drives
ꢀꢀAC adapters
ꢀꢀSwitching power supplies
Applica-
tions
Applica-
tions
π-MOS
V
Series VDSS = 400 V to 600 V
π-MOS III Series VDSS = 800 V to 900 V
This Series is comprised of highly integrated, high-performance,
high-breakdown-voltage and low-cost products with VDSS in the
range 800 V to 900 V which are ideal for use in 200-V AC input-
switching power supplies.
This Series is comprised of highly integrated, high-performance,
high-breakdown-voltage and low-cost products with VDSS in the
range 400 V to 600 V which are ideal for use in 100-V AC input-
switching power supplies.
ꢀ
ꢀ
ꢀ
ꢀSwitching power supplies
ꢀAC adapters
ꢀLighting inverters
Applica-
tions
Applica-
tions
ꢀꢀSwitching power supplies
5
Selection Guide
V
DSS(V)
(A)
V
DSS(V)
(A)
12
16
20
30
40
50
60
100
150
180
200
250
400
450
500
600
700
800
900
1000
I
D
I
D
2SK2998(20)
2SK3302(18)
2SK3471(18)
0.5
1
0.5
1
➇
➇
2SJ360(0.73)
➇
2SK2963(0.7)
2SK2962(0.7)
➇
➇
2SJ313(5.0)
2SJ338(5.0)
2SK2013(5.0)
2SK2162(5.0)
2SK2992(3.5)
➇
2SK3498(5.5)
➇
2SK3472(4.6)
2SK3374(4.6)
➇
➇
2SK2836(9)
2SK3371(9)
➇
➇
2SK2733(9.0)➇
2SK2845(9)➇
2SK3301(20)➇
2SK3670(1.7)
2SJ507(0.7)
➇
2SJ508(1.9)
2SJ509(1.9)
➇
➇
TPCS8004-H(0.8)
➇
1.3
1.5
1.8
1.3
1.5
1.8
TPC8012-H(0.4)
➇
2SJ610(2.55)
➇
2SK3543(2.45)
2SK3757(2.45)
➇
➇
2SK2599(3.2)
2SK3373(3.2)
➇
➇
2SK2846(5.0)
2SK2865(5.0)
2SK3067(5.0)
➇
➇
➇
#
#
2SJ465(0.71)
2SK2549(0.29)
➇
➇
2SK2964(0.18)
➇
2SK2615(0.3)
2SK2961(0.3)
2SK3658(0.3)
➇
➇
➇
2SJ511(0.45)
➇
2
2
2SK3767(5.0)
➇
2.3
2.5
2.3
2.5
N
TPC6201(0.095)
➇
2SJ567(2.0)
➇
2SK2718(6.4)
2SK3566(4.3)
➇
➇
2SK3762(6.4)
➇
P
#
TPC6105(0.11)➇
P➇ TPCF8301(0.11)
PS➇➇➇TPCF8B01(0.11)
➇
➇
2.7
2.7
3
P➇ TPCF8103(0.11)
➇
2SK2200(0.35)
2SK2201(0.35)
2SK2742(0.35)
➇
➇
➇
2SK2862(3.2)
2SK2608(4.3)
2SK2700(4.3)
2SK2719(4.3)
2SK3564(4.3)
2SK3763(4.3)
➇
➇
➇
➇
➇
2SK3462(1.7)
➇
2SK2603(3.6)
2SK2883(3.6)
➇
➇
N# TPCF8201(0.049)
➇
NS# TPCF8A01(0.049)
TPCF8302(0.059)
P➇ TPCF8303(0.058)
➇
P
#
➇
3
➇
CP TPCF8402(0.077)
➇
3.2
3.4
3.2
3.4
CP➇TPCP8402(0.072)
➇
2SK2750(2.2)
2SK3085(2.2)
2SK3567(2.2)
2SK3760(2.2)
➇
➇
➇
➇
2SK3798(3.5)
➇
P
TPC8302(0.12)
➇
P
TPC8301(0.12)➇
3.5
3.5
CN TPCF8402(0.05)
➇
2SK1119(3.8)
2SK1930(3.8)
4
4
N➇TPCP8201(0.05)
CN➇TPCP8402(0.077)➇
4.2
4.2
2SK3342(1.0)
➇
P# TPC6101(0.06)
➇
P
P
TPC6102(0.06)
TPC8303(0.035)
➇
➇
4.5
CP TPC8401(0.035)
CP TPC8402(0.035)
CP TPC8403(0.055)
➇
➇
➇
4.5
2SJ668(0.17)
2SJ315(0.25)
2SJ377(0.19)
2SJ378(0.19)
2SJ438(0.19)
2SK2229(0.16)
2SK2231(0.16)
2SK2741(0.16)
2SK2399(0.23)
2SK2400(0.23)
➇
➇
2SK3205(0.52)
2SJ407(1.0)
➇
2SJ512(1.25)
➇
2SK2662(1.5)
2SK2661(1.5)
2SK2991(1.5)
➇
➇
➇
2SK2274(1.7)
2SK2604(2.2)
2SK2605(2.2)
2SK2884(2.2)
➇
➇
➇
2SK2610(2.5)
2SK2717(2.5)
2SK3565(2.5)
➇
➇
➇
2SK1359(3.8)
2SK2989(0.15)
➇
2SJ525(0.12)
#
#
2SJ439(0.2)
2SK2493(0.1)
➇
➇
TPC8208(0.05)
TPCS8209(0.03)
N# TPCS8205(0.045)
➇
➇
2SJ537(0.19)
➇
2SK2381(0.8)
2SK2835(0.8)
2SK2920(0.8)
➇
➇
➇
TPC8004(0.05)
CN TPC8402(0.05)
TPC8104-H(0.065)➇
TPCS8209(0.05)
➇
➇
➇
➇
➇
➇
➇
➇
➇
2SK3316(1.8)
➇
N# TPCS8210(0.03)
➇
P
N
2SK3466(1.5)
➇
P# TPC8305(0.03)
➇
➇
5
5
2SK3417(1.8)
2SK3627(1.5)
2SK3563(1.5)
➇
➇
TPCF8001(0.032)
➇
P
TPCS8302(0.035)
➇
P# TPC8303(0.021)
➇
2SK3758(1.5)
➇
N
TPC8206(0.05)➇
2SK2679(1.2)
2SK2838(1.2)
➇
➇
P
➇
TPC6103(0.035)
➇
➇
P
➇ TPC6104(0.04)➇
N
TPC8211(0.036)➇
5.5
5.5
PD➇➇TPC8401(0.038)
P➇ TPCF8101(0.028)
➇
N
TPC6001(0.03)
➇
➇
N
N
TPC6002(0.03)
TPC6003(0.024)➇
➇
2SK2544(1.25)
2SK2545(1.25)
2SK2602(1.25)
2SK2777(1.25)
➇
➇
➇
➇
N# TPC6004(0.024)
TPC8207(0.02)
TPCS8102(0.02)
➇
➇
N# TPC6005(0.028)➇
TPC8203(0.021)
➇
TPCS8211(0.024)
➇
CN TPC8401(0.021)➇
CN TPC8403(0.033)➇
2SK3130(1.55)
2SK3562(1.25)
➇
6
6
TPCS8204(0.017)
➇
P# TPCS8102(0.02)
N# TPCS8212(0.024)
N# TPCS8208(0.017)
TPCF8102(0.030)
➇
➇
➇
➇
P
P
TPCS8101(0.025)
➇
2SK3761(1.25)➇
TPCF8104(0.028)
➇
NS➇TPC8A01(0.025)➇
PD
P
➇
➇TPCP8J01(0.035)(-32V)➇
2SJ516(0.8)
➇
6.5
7
6.5
7
N
TPC8206(0.05)
➇
2SK2746(1.7)
2SK3633(1.7)
➇
➇
2SK2749(2.0)
2SK3700(2.5)
➇
2SK1365(1.8)
N
P
N
N
TPC8006-H(0.027)➇
TPC8105-H(0.04)
➇
TPC8001(0.02)
➇
TPCF8001(0.023)
➇
2SK3667(1.0)
➇
2SK2417(0.5)
2SK2917(0.5)
➇
➇
7.5
8
7.5
8
2SK1120(1.8)
2SK2613(1.7)
2SK2542(0.85)
2SK2543(0.85)
2SK2776(0.85)
2SK3538(0.85)
2SK3626(0.85)
2SK3561(0.85)
2SK3759(0.85)
➇
2SK2847(1.4)➇
2SK2606(1.2)
➇
➇
N
TPC8210(0.015)
➇
P
TPC8110(0.025)➇
➇
➇
➇
➇
➇
➇
2SK2350(0.4)
➇
2SK2952(0.55)➇
2SK2914(0.5)
➇
2SK3017(1.25)➇
NS TPC8A01(0.018)
➇
8.5
9
8.5
9
2SK2467(0.83)
2SJ440(0.83)
2SK2607(1.2)
2SK2611(1.4)
2SK3473(1.6)
➇
➇
Notes:
) = R
➇
➇
: π-MOSVI
: L2-π-MOSV
➇
➇
: π-MOSIII
: π-MOSV
➇
➇
: L2-π-MOSVI
➇
➇
: π-MOSVII
: π-MOSIV
DP
TPS
SOP-8
SOP-8 Lead clamp
TSSOP-8 TO-3P(SM)
TO-220(NIS)
SOP Advance
New product
series code
POWER-MINI
TO-220SIS
SP
VS-8
TFP
VS-6
➇
Slim-TFP
➇PS-8
TO-92MOD
POWER-MOLD
TO-3P(N)
Package
code
NS = N-ch + SBD
PS = P-ch + SBD
PD = P-ch + Driver
(load switch)
(
max
➇
= 1.8-V drive
P
= P-ch
DS(ON)
= High-speed diode CN = Complementary N-ch
$
= 10-V drive
= 2.5-V drive
: U-MOS
TO-220AB
TO-220FL/SM
TO-3P(N)IS
TO-3P(L)
[
] = Under development
N
= N-ch
CP = Complementary P-ch
#
6
7
Selection Guide
V
DSS(V)
(A)
V
DSS(V)
(A)
20
30
50
60
100
150
180
200
250
300
400
450
500
600
700
900
1000
I
D
I
D
2SJ200(0.83)
2SJ440(0.83)
2SK1529(0.83)
2SK3497(0.15)
2SJ618(0.37)
2SK2843(0.75)
2SK2866(0.75)
2SK2889(0.75)
➇
➇
➇
2SK2841(0.55)
2SK2949(0.55)
2SK3499(0.55)
➇
➇
➇
2SK2968(1.25)➇
P
TPC8115(0.01)
➇
2SK2839(0.04)➇
TPC8109(0.02)➇
2SK3669(0.125)
➇
2SK3265(1.0)
2SK3453(1.0)
➇
➇
2SK3126(0.65)
2SK3309(0.65)
2SK3310(0.65)
2SK3407(0.65)
➇
➇
➇
➇
2SK2601(1.0)➇
P
2SK2996(1)
2SK3438(1.0)
2SK3437(1.0)
➇
➇
10
10
➇
2SK3399(0.75)
2SK3569(0.75)
➇
2SK2965(0.26)
2SJ201(0.625)
➇
N
P
N
P
TPC8014(0.014)
TPC8108(0.013)
TPC8010-H(0.016)
➇
➇
➇
11
12
11
12
TPC8113(0.01)
➇
2SK2699(0.65)
➇
2SK1489(1.0)
2SK2842(0.52)
2SK3068(0.52)
2SK3313(0.62)
➇
➇
➇
2SJ380(0.21)
➇
2SK1530(0.625)
2SK3625(0.082)
➇
2SK3398(0.52)
2SK3568(0.52)
➇
➇
N[ TPC8015-H(0.008)]
➇
2SK2508(0.25)
2SK2598(0.25)
➇
➇
2SK3743(0.4)
2SK3403(0.4)
2SK3544(0.4)➇
➇
➇
N
N
P
P
TPC8003(0.007)
TPC8009-H(0.01)
➇
➇
13
13
TPC8107(0.007)
TPC8112(0.006)
➇
➇
2SJ304(0.12)
2SJ312(0.12)
2SK2916(0.4)
➇
14
15
14
15
2SK2953(0.4)
➇
2SK2382(0.18)
➇
2SK2698(0.4)2
2SK3314(0.48)
N
N
N
TPC8013-H(0.0065)
TPC8016-H(0.0055)
TPC8017-H(0.0066)
➇
➇
➇
2SK2401(0.18)
➇
➇
2SJ412(0.21)
2SJ619(0.21)
➇
➇
2SK2915(0.4)
➇
16
18
16
18
2SJ464(0.09)
2SJ620(0.09)
➇
➇
2SK2882(0.12)
2SK3387(0.12)
➇
➇
P
N
TPC8114(0.0045)
TPC8018-H(0.0046)
➇
2SK2917(0.27)
➇
➇
2SK2837(0.27)
2SK3117(0.27)
➇
➇
2SK2614(0.046)
➇
2SK2391(0.085)➇
2SJ349(0.045)
2SJ401(0.045)
2SK2782(0.055)
➇
➇
➇
2SK2993(0.105)
2SK3388(0.105)
2SK3445(0.105)
➇
➇
➇
20
20
2SK2507(0.046)
➇
2SK2232(0.046)
2SK2311(0.046)
➇
➇
2SK3444(0.082)
2SK3625(0.082)
➇
➇
2SK1544(0.2)
25
27
25
27
2SK2314(0.085)
2SK2789(0.085)
➇
➇
2SK2466(0.046)
2SK3084(0.046)
➇
➇
2SK3443(0.055)
➇
2SK3176(0.052)
➇
2SK2967(0.068)
2SK2995(0.068)
➇
➇
2SJ334(0.038)
2SJ402(0.038)
➇
➇
30
32
30
32
35
36
2SK1486(0.095)
2SK2844(0.022)
TPCA8003-H(0.0066)
➇
2SK3236(0.02)
2SK3662(0.0125)
35
36
N
➇
➇
➇
➇
➇
2SK2385(0.03)
➇
2SK3089(0.03)
➇
N
P
P
P
TPCA8004-H(0.0046)
TPCA8101-H(0.007)
TPCA8102-H(0.006)
40
40
TPCA8103(0.0042)
➇
2SK3090(0.02)
2SK3127(0.011)
2SK3506(0.02)
➇
➇
$
2SK2550(0.03)
2SK2886(0.02)➇
2SK2744(0.02)
➇
2SK2233(0.03)
2SK2266(0.03)
➇
➇
$
$
$
➇
➇
2SK2312(0.017)
➇
2SK3051(0.03)
45
50
45
50
2SK2376(0.017)
2SK2398(0.03)
➇
➇
$
2SK2985(0.0058)
2SK3440(0.008)
2SK2173(0.017)
2SK2445(0.018)2
2SK2986(0.0058)
➇
$
2SK2551(0.011)
2SK2745(0.0095)
➇
➇
$
➇
➇
2SK1381(0.032)
2SK3442(0.020)
2SK3131(0.11)
➇
➇
2SK3132(0.09)
➇
$
➇
55
60
55
60
2SK3125(0.007)
2SK3128(0.011)
➇
➇
2SK3129(0.007)
➇
2SK2267(0.011)
2SK2313(0.011)
➇
➇
2SK1382(0.020)
2SK3397(0.006)
2SK2987(0.0058)
➇
➇
70
75
70
75
$
2SK3389(0.005)
2SK3439(0.005)
➇
➇
2SK3441(0.0058)
Notes:
➇
➇
: π-MOSVI
: L2-π-MOSV
➇
➇
: π-MOSIII
: π-MOSV
➇
➇
: L2-π-MOSVI
➇
➇
: π-MOSVII
: π-MOSIV
DP
TPS
SOP-8
SOP-8 Lead clamp
TO-220(NIS)
SOP Advance
New product
series code
POWER-MINI
SP
VS-8
TFP
VS-6
➇
Slim-TFP
➇PS-8
TO-92MOD
TO-220FL/SM
POWER-MOLD
TO-3P(N)
Package
code
NS = N-ch + SBD
PS = P-ch + SBD
PD = P-ch + Driver
(load switch)
(
) = R
max
DS(ON)
➇
= 1.8-V drive
= High-speed diode CN = Complementary N-ch
= N-ch CP = Complementary P-ch
P
= P-ch
$
= 10-V drive
= 2.5-V drive
: U-MOS
TO-220SIS
TO-220AB
TO-3P(N)IS
TO-3P(L)
TSSOP-8
TO-3P(SM)
[
] = Under development
N
#
8
9
Power MOSFET Characteristics
1.Features of SOP Series
Circuit example for DC-DC Converter
ꢀ Switching (high side)
ꢀ Power management
High-speed, trench and N-channel MOSFET
Low On-resistance, trench and P-channel MOSFET
(N-channel high-speed or ultra high-speed U-MOS III Series)
(low On-resistance U-MOS IV Series)
IN
OUT
ꢀ Synchronous rectifier (low side)
High-speed, trench and N-channel MOSFET
(N-channel high-speed or ultra high-speed U-MOS III Series)
MOSBD
Development Process of High-Speed U-MOS Series
Improved trade-off between On-resistance and gate switch charge due to short-channel structure, trench contact
structure and Al straps.
200
ꢀRDS(ON) reduction
High-speed U-MOS II
ꢀReduction of package inductance
150
100
50
Drain
High-speed U-MOS III
Ultra High-speed U-MOS III
Source
Improved characteristics
Gate
by using Al straps
Al straps
0
1999
2002
2003
Chip development
High-speed U-MOS II
High-speed U-MOS III
Ultra high-speed U-MOS III
MOSBD (MOSFET with SBD)
Package development
SOP-8
Strap structure
SOP Advance
10
Ultra High-Speed U-MOS III Series
ꢀꢀCharacteristics
NEW
ꢀꢀElectrical Characteristics Comparison
High-Speed U-MOS III Ultra High-Speed U-MOS III
TPC8009-H TPC8017-H
•
Low gate switch charge: 14% reduction compared
R
DS(ON)(mΩ)
11
7.3
7.8
to high-speed U-MOS III
Qsw(nC)
Cgd(pF)
Cgs(pF)
9.1
Performance Index:
improved 43%
•
Low On-resistance (Al straps): 34% reduction
compared to high-speed U-MOS III
250
1210
175
1290
56.9
• Housed in SOP Advance, high current, thin
RDS(ON)XQsw(mΩ•nC)
100.1
20.7%
and excellent heat dissipated package
Control shoot-
through current
Capacitance ratio (Cgd / Cgs)
13.6%
@RDS(ON): VGS = 4.5 V typ.
Qsw: VDS = 24 V typ.
Cgd/Cgs: VDS = 10 V typ.
43% RDS(ON) X Qsw reduction
(compared to high-speed U-MOS III
)
ꢀꢀDC-DC Converter Efficiency Comparison
•
Ultra High-Speed U-MOS III vs. Conventional Products
@ f = 300 kHz, V = 17.6 V, V
in
= 1.6 V
out
92%
TPC8020-H+TPC8020-H
Solid line: Ultra High-Speed U-MOS III
Dotted line: High-Speed U-MOS III
(conventional products)
90%
88%
86%
84%
Efficiency
improved
TPC8009-H+TPC8009-H
TPC8020-H+TPC8018-H
82%
80%
78%
TPC8009-H+TPC8013-H
0
2
4
6
8
10
12
14
16
Output Current Iout (A)
Comparison when ultra high-speed MOS III Used in Combination
•
@ f = 300 kHz, Vin = 17.6 V, Vout = 1.6 V
TPC8020-H+TPC8020-H
91%
90%
89%
88%
87%
86%
85%
84%
83%
82%
81%
Solid line: the best combination
1. Low current(Iout ≤10 A)
TPC8020-H + TPC8020-H
2. High current(Iout >10 A)
TPC8020-H + TPC8018-H
TPC8017-H+TPC8018-H
TPC8020-H+TPC8017-H
TPC8017-H+TPC8017-H
TPC8020-H+TPC8018-H
0
2
4
6
8
10
12
14
16
Output Current Iout (A)
Q
1
Q
SW(nC)
RDS(ON)(mΩ)
L1
V
IN
VOUT / IOUT
@VDS = 24 V
@VGS = 4.5 V
Q
2
TPC8020-H
TPC8017-H
TPC8018-H
TPC8009-H
TPC8013-H
9.5
7.3
6.9
7.8
R
L
C
1
C
IN
Ultra High-Speed
U-MOS III
SBD
[Test conditions]
f = 300 kHz
Control IC
5.0
12.0
9.1
V
V
IN = 17.6 V
OUT = 1.6 V
11.0
6.6
High-Speed
U-MOS III
15.6
11
Power MOSFET Characteristics
(MOSFET with SBD)
NEW
MOS BD
ꢀꢀCharacteristics
• Compact size
Integrated three devices ( two MOSFETs and one SBD) into a single package
• High-performance device
High side: high-speed MOSFET (high-speed U-MOS III
)
Low side: MOSBD (U-MOS III MOSFET with a SBD)
Conventional Circuit
MOS BD
Bu ilt -in S BD
High side (Q1)
High side
Low side (Q2)
Low side
Q1
Q2
SBD
SOP-8
SOP-8
SOP-8
+
+
ꢀꢀApplications
• Portable devices: DC-DC converters for notebook PCs
ꢀ Product Line-up
R
max (mΩ)
4.5V
30
Maximum ratings
DS(ON)
Q
typ.
C
typ.
g
Circuit
Configuration
iss
Part Number
Remark
(nC)
(pF)
940
V
(V)
DSS
I (A)
D
10V
High-speed
30
6
25
18
17
49
N-ch/
N-ch+SBD
U-MOS III
TPC8A01
30
8.5/1
21
2295
U-MOS III
12
NEW
S OP Ad va n c e
ꢀꢀCharacteristics
• Mounting area is identical with that of SOP-8.
• On-resistance reduction and thin package (1.0 mm max)
employing flat leads and Al straps
• Achieved high current and high power dissipation by attaching an
exposed heat sink on the bottom of the package
(ID(DC) = 40 A, P
D
= 45 W)
0.4 ± 0.1
1.27
0.05
M
A
8
5
1
4
0.15 ± 0.05
4.25 ± 0.2
1
4
8
5
0.595
0.8 ± 0.1
A
5.0 ± 0.2
1,2,3: Source
4: Gate
S
0.05 S
5,6,7,8: Drain
SOP-8
30
SOP Advance
30
Features of SOP Advance
The same PCB area as SOP-8
Low profile, t = 0.9 mm
PCB area
(mm2)
(mm)
Total height (max)
1.9
65.8
–
1.0
rth(ch-a) (t = 10s)(Note 1)
(°C / W)
(°C / W)
(A)
44.6
2.78
40
High-power dissipation
rth(ch-c)
Current rating
18
High-current guarantee
Al straps
Package resistance(Note 2)
(mΩ)
1.6
0.5
Note 1: When mounted on a glass epoxy board (25.4 mm X25.4 mm x1.6 mm) Note 2: without chip resistance
ꢀꢀApplications
• Portable devices: DC-DC converters for notebook PCs
ꢀ Product Line-up
Circuit
Configu-
ration
R
(ON) max(mΩ)
Maximum Ratings
DS
Q
C
typ.
g typ.
iss
Part Number
Remark
(nC)
(pF)
V (V)
DSS
I (A)
D
10V
4.5V
13
4.0V
Ultra high-speed
U-MOS III
TPCA8005-H ꢀ
TPCA8003-H
TPCA8004-H
9
—
—
—
30
27
35
40
24
25
37
1395
1465
2265
Ultra high-speed
U-MOS III
N-ch
Single
30
6.6
4.6
9.5
6.2
Ultra high-speed
U-MOS III
30
TPCA8102
TPCA8103
–30
–30
–40
–40
6
—
—
14
109
184
4600
7880
U-MOS III
U-MOS IV
P-ch
Single
4.2
6.8
ꢀ: Under development
13
Power MOSFET Characteristics
SOP-8 Series Line-up .... [Part Number: TPC8xxx]
ꢀꢀFeatures
• Low On-resistance and high-speed switching series are lined up.
Low On-resistance Series: U-MOS III / IV
High-speed switching series: high-speed U-MOS III, ultra high-speed U-MOS III
• On-resistance reduction employing Al straps
ꢀ Product Line-up
R
max (mΩ)
Maximum Ratings
Circuit
Configuration
DS(ON)
Q
(nC)
C
iss
typ.
(pF)
typ.
g
Remark
Part Number
TPC8004
V
DSS
30
(V) I (A)
D
10V
50
20
27
9
4.5V
—
—
—
13
22
25
—
12
9.5
7.5
6.2
—
—
—
—
44
—
20
—
—
—
—
—
—
—
—
—
—
10
—
30
—
—
—
—
—
—
—
30
21
4V
80
30
40
—
2.5V
5
—
—
—
—
—
—
—
—
—
—
—
—
70
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
14
—
50
—
—
—
—
—
—
—
—
—
16
40
16
23
39
18
90
29
25
46
38
11
9.5
22
15
25
40
75
17
17
32
45
77
107
107
130
130
180
115
48
24
28
40
28
16
28
17
18
17
49
475
1250
790
π-MOS VI
π-MOS VI
High-speed U-MOS II
Ultra high-speed U-MOS III
U-MOS III
30
30
7
TPC8001
7
TPC8006-H
TPC8020-H ꢀꢀ
TPC8014
TPC8010-H
TPC8003
30
13
11
11
13
13
15
15
18
1.8
5
1395
1860
1020
4380
1460
1465
2380
2265
440
30
14
16
7
—
30
—
High-speed U-MOS III
U-MOS II
N-ch
Single
30
13
—
30
8
High-speed U-MOS III
Ultra high-speed U-MOS III
High-speed U-MOS III
Ultra high-speed U-MOS III
TPC8015-H
TPC8017-H
TPC8016-H
TPC8018-H
TPC8012-H
TPC8208
TPC8207
TPC8209
TPC8211
TPC8203
TPC8210
TPC8206
TPC8104-H
TPC8105-H
TPC8109
TPC8108
TPC8111
TPC8113
TPC8107
ꢀ
ꢀ
ꢀ
ꢀ
30
6.6
5.7
4.6
400
—
—
40
36
21
15
50
65
40
20
13
12
10
7
—
30
—
30
—
200
20
—
π-MOS V
50
20
60
—
780
U-MOS III
U-MOS III
U-MOS II
U-MOS III
U-MOS II
U-MOS III
20
6
2010
600
30
5
N-ch
Dual
30
5.5
6
1250
1700
3530
800
30
32
—
30
8
60
5
75
120
60
30
23
18
18
15
14
6.8
—
U-MOS II
High-speed U-MOS II
High-speed U-MOS II
U-MOS III
–30
–30
–30
–30
–30
–30
–30
–30
–30
–20
–40
–20
–30
30
–5
–7
–10
–11
–11
–11
–13
–13
–18
–10
–8
–5
–4.5
6
730
1440
2260
3510
5710
4500
5880
5880
7480
9130
2180
2030
970
U-MOS III
U-MOS IV
U-MOS IV
U-MOS III
U-MOS III
U-MOS IV
U-MOS IV
U-MOS III
U-MOS II
U-MOS II
U-MOS II
U-MOS II
P-ch
Single
6
ꢀ
ꢀ
TPC8112
TPC8114
TPC8115
TPC8110
TPC8305
TPC8303
4.5
—
25
—
35
21
35
50
35
33
55
25
18
35
—
P-ch
Dual
65
32
65
80
65
46
90
—
1700
970
TPC8401
TPC8402
TPC8403
TPC8A01
–30
30
–4.5
5
π
-MOS VI
475
N-ch/
P-ch
U-MOS II
U-MOS II
U-MOS II
–30
30
–4.5
6
970
850
–30
30
–4.5
6
940
940
High-speed U-MOS III
U-MOS III
N-ch/
N-ch+SBD
30
8.5/1
—
2295
ꢀ: Al Strap type ꢀ: Under development
14
TSSOP-8 Series Features
ꢀꢀFeatures
• Achieved RDS(ON) = 17mΩ for TPCS8204 employing U-MOS III design
• Common-drain types are available:
Ideal use for lithium-ion battery protection and reverse current protection
20
Low On-resistance
Dual type / V
= 20 V
DSS
N-channel 20-V device (TSSOP-8 / dual type)
15
ꢀꢀCharacteristics
10
• Employed the third generation design of ultra-high cell
density trench technology (18 Mcell/cm2)
5
•
Reduced On-resistance by 25% than that of conventional products
(in comparison with Toshiba U-MOS II device)
0
U-MOS II
U-MOS III
U-MOS IV
Common-drain Type
Common-drain series suitable for reverse current prevention in mobile devices and
lithium ion secondary battery protection
Reverse current prevention
D2 S2 S2 G2
D2 S2 S2 G2
Common-drain
type
Conventional type
DC-DC
converters
Total impedance
reduced by elimination
of external wiring
Battery protection
Charger
Control IC
Wiring resistance included
since D1 and D2 are
D1 S1 S1 G1
D1 S1 S1 G1
externally wired together
ꢀ Product Line-up
R
max (mΩ)
Maximum Ratings
(ON)
DS
Q
(nC)
typ.
C
typ.
(pF)
Circuit
Configuration
g
iss
Part Number
Remark
V (V)
DSS
I (A)
D
10V
4V
2.5V
2.0V
200
200
250
250
–20
–30
–30
–30
20
1.3
1.9
1.1
1.8
–6
–6
–11
–11
5
800
—
—
—
—
—
38
—
—
—
60
40
40
22
22
29
29
60
30
—
—
—
—
—
—
—
—
90
60
60
35
35
45
45
95
80
12
10
380
630
π-MOS
π-MOS
π-MOS
π-MOS
V
V
V
V
TPCS8004
TPCS8007
TPCS8006
TPCS8008
TPCS8102
TPCS8101
TPCS8104
TPCS8105
TPCS8205
TPCS8209
TPCS8210
TPCS8204
TPCS8208
TPCS8211
TPCS8212
TPCS8302
TPCS8303
500
N-ch Single
1000
—
—
ꢀ
ꢀ
11
380
550
—
—
—
—
20
37
2740
1810
5710
5710
760
U-MOS II
U-MOS II
U-MOS IV
U-MOS IV
U-MOS II
U-MOS III
U-MOS III
U-MOS III
U-MOS III
U-MOS III
U-MOS III
U-MOS III
U-MOS IV
25
P-ch Single
12
40
37
18
107
107
11
13.5
—
19.5
45
20
5
—
30
15
1280
1280
2160
2160
1590
1590
1590
2560
20
5
—
30
15
ꢀ
ꢀ
ꢀ
20
6
N-ch Dual
P-ch Dual
—
—
—
—
—
—
17
22
20
6
17
22
20
6
24
20
20
6
24
20
–20
–6
35#
21#
28.5
33
–20
–5
ꢀ: Common-drain ꢀ: Under development
15
Power MOSFET Characteristics
2. VS Series
ꢀꢀPackage
The VS Series that achieves the one of the industries' thinnest class package (height: 0.85 mm max).
•
•
VS -6 Series: Standard size (2.9 mm x 1.6 mm) that is suitable for general-purpose use.
VS -8 Series: The flat package offers more powers as compared with the VS-6 package, and the On-resistance is reduced
by 20% while the mounting area is reduced by 32%. In addition, the power dissipation is improved by 14%.
P S -8 Series: Achieving the same mounting area as the VS-6 Series, PS-8 is improved chip mounting capability,
widen mold width using flat leads. This Series is also reduced the On-resistance by 70%.
•
VS -6
2.9
8.1 mm2
0.95
3 2
%
1 0
%
downsizing
higher power
VS -8
P S -8
2.9
2.9
8.1 mm2
5.5 mm2
0.65
0.65
(Unit: mm, typical values unless otherwise specified.)
ꢀꢀMain Applications
ꢀDC-DC converters: notebook PCs, LCDs, PPDAs
ꢀSwitches: Cell phones, notebook PCs, USB switches, power management switches
ꢀMotor drives: HDDs
16
VS-6 Series Line-up .... [Part Number: TPC6xxx]
ꢀꢀFeatures
• Achieved ultra low-On resistance employing U-MOS II design
• Zener diode between gate and source for all products
• Thin package whose height is as low as 0.85 mm (max) on a board.
ꢀ Product Line-up
Maximum Ratings
R
max (mΩ)
DS(ON)
Q
typ. C typ.
iss
g
Circuit
Configuration
Part Number
Marking
Remark
(nC)
(pF)
V
(V)
DSS
20
I (A)
D
6
10V
—
—
30
24
—
95
—
—
—
—
60
4.5V
30
24
50
32
28
145
35
110
60
40
2.5V
2.0V
60
37
—
1.8V
—
—
—
—
—
—
90
300
—
45
32
—
15
17
13
25
19
4.7
20
6
755
1400
610
1250
1420
170
S2A
S2C
S2B
S2D
S2E
S4A
S3C
S3E
S3A
S3D
S3B
U-MOS II
U-MOS III
U-MOS II
U-MOS III
U-MOS III
U-MOS II
U-MOS III
U-MOS III
U-MOS II
U-MOS III
U-MOS II
TPC6001
TPC6004
TPC6002
TPC6003
TPC6005
TPC6201
TPC6103
TPC6105
TPC6101
TPC6104
TPC6102
20
6
N-ch
Single
30
6
30
6
—
—
30
6
35
—
41
—
30
2.5
–5.5
–2.7
–4.5
–5.5
–4.5
N-ch Dual
–12
–20
–20
–20
–30
55
160
100
60
—
—
—
180
—
—
1520
470
P-ch
Single
12
19
11
830
1430
500
120
—
100
VS-8 Series Line-up .... [Part Number: TPCF8xxx]
ꢀꢀFeatures
• Achieved ultra low-On resistance employing U-MOS III design
• Zener diode between gate and source for all products
• Thin package whose height is as low as 0.85 mm (max) on a board.
• 32% mounting area reduction compared to VS-6 (TSOP-6) employing
flat package with high cell density
• P
D
= 2.5 W @ t = 5s when a device mounted on a glass epoxy board
ꢀ Product Line-up
Maximum Ratings
R
max (mΩ)
DS(ON)
Q
typ. C typ.
iss
Circuit
Configuration
g
Part Number
Marking
Remark
(nC)
(pF)
V
DSS
30
(V) I (A)
D
10V
23
—
—
—
28
—
—
—
—
4.5V
31
28
110
30
38
49
110
59
58
105
77
2.5V
2.0V
1.8V
—
85
300
90
—
—
300
—
250
—
—
7
N-ch Single
P-ch Single
N-ch Dual
P-ch Dual
—
40
160
41
—
—
—
—
—
25.4
18
6
1270
1600
470
1550
1760
590
470
800
860
600
470
600
590
470
F2A
F3A
F3C
F3B
F3D
F4A
F5A
F5B
F5C
F5D
U-MOS III
U-MOS III
U-MOS III
U-MOS III
U-MOS IV
U-MOS III
U-MOS III
U-MOS IV
U-MOS IV
U-MOS IV
U-MOS III
U-MOS IV
U-MOS III
U-MOS III
TPCF8001
TPCF8101
TPCF8103
TPCF8102
TPCF8104
TPCF8201
TPCF8301
TPCF8302
TPCF8303
TPCF8304
–12
–20
–20
–30
20
–6
–5.5
–6
–6
3
19
34
7.5
6
11
11
16
10
14
7.5
6
—
66
160
95
87
—
100
—
200
—
–20
–20
–20
–30
30
–2.7
–3
–3
–3.2
4
72
48
72
—
—
—
—
TPCF8402
N-ch + P-ch
F6B
–30
20
–3.2
3.0
–2.7
105
49
—
—
—
—
N-ch+SBD
P-ch+SBD
66
160
100
—
F7A
F8A
TPCF8A01
TPCF8B01
–20
—
110
300
PS-8 Series Line-up .... [Part Number: TPCP8xxx]
ꢀꢀFeatures
• The same mounting area as the VS-6 (TSOP-6) Series
• Using flat leads and the latest process, U-MOS, VS-6 Series is able to offer a
70% RDS(ON) reduction compared to VS-6 Series.
• Zener diode between gate and source
ꢀ Product Line-up
R
max (mΩ)
Maximum Ratings
DS(ON)
Q
(nC)
typ.
C
typ.
(pF)
Circuit
Configuration
g
iss
Part Number
Remark
V
(V)
I (A)
D
10V
4.5V
2.5V
1.8V
DSS
30
4.2
0.1
50
—
—
50
72
35
—
77
3(4V)
38
—
4
—
—
10
—
20
10
14
34
—
470
9.3
N-ch Dual
U-MOS III
π-MOS VI
U-MOS III
U-MOS III
U-MOS IV
U-MOS IV
NPN
TPCP8201
TPCP8401
20
N-ch / P-ch
Load Switch
–12
30
–5.5
4.2
58
—
—
—
—
103
—
1520
470
600
1762
—
77
TPCP8402
TPCP8J01
N-ch + P-ch
N-ch + NPN
–30
–32
50
–3.4
–6.0
0.1
105
49(4V)
—
—
—
—
17
Power MOSFET Characteristics
3. TFP (Thin Flat Package) Series
ꢀꢀFeatures
TFP
Stands for Thin Flat Package
ꢀꢀThin flat package has a mounting volume 58% less than that of the TO-220SM.
ꢀꢀSeparate package inputs and outputs enable stable equipment operation.
ꢀꢀImproved heat dissipation characteristic enables mounting of higher-power devices.
Package range for surface-mount devices
100
100
90
80
70
60
50
40
30
20
10
NEW
TFP vs TO-220SM
TFP
-
TO 220
-
TO 3P
(SM)
(SM)
(
ꢀꢀ
)
15.5 15.0
10
1.0
0.1
DP
(
ꢀꢀ )
10.0 10.0
TFP
-
SOP 8
(
ꢀ
)
6.8 5.5
PW MOLD
SP
(
ꢀ
)
(
ꢀꢀ )
6.8 5.5
6.5 3.5
PW MINI
TO-220
SM
(
ꢀꢀ )
4.6 2.5
(
)
: Body Size
Unit : mm
1
10
100
1000
0.1
1.0
10
100
1000
Drain-source voltage VDSS (V)
Power Dissipation PD (W)
ꢀꢀApplications
ꢀꢀDC-DC converters
ꢀꢀMotherboards
ꢀꢀAutomotive equipment
ꢀꢀTFP line-up
R
max (mΩ)
Maximum Ratings
DS(ON)
Q
typ.
C
iss
typ.
g
Part Number
Remarks
V
(V)
DSS
I (A)
D
(nC)
(pF)
V
=10V
GS
V
=4V
GS
-100
-100
30
-16
-18
70
75
75
50
75
75
45
18
30
25
20
20
10
13
5
210
320
48
140
110
62
1100
2900
5000
3530
5450
3700
9300
L2-π-MOS
L2-π-MOS
V
V
2SJ619
90
6.0
120
2SJ620
-
U-MOS II
U-MOS II
U-MOS II
U-MOS II
U-MOS II
U-MOS III
U-MOS II
2SK3397
2SK3389
2SK3439
2SK3440
2SK3441
30
5.0
-
30
5.0
10.0
116
55
60
8.0
-
60
5.8
10.0
210
(196)
85
60
(5.8)
20
-
(12400)
4100
1380
2030
2080
4000
2090
1340
1600
780
ꢀ
2SK3842
2SK3442
2SK3387
2SK3443
2SK3444
2SK3388
2SK3445
2SK3499
2SK3544
2SK3466
2SK3538
2SK3398
2SK3438
100
150
150
200
250
250
400
450
500
500
500
600
-
120
55
180
57
L2-π-MOS
V
-
-
-
-
-
-
-
-
-
-
45
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
V
82
44
V
V
V
V
V
V
V
V
V
105
105
550
400
1500
850
520
1000
100
45
34
34
17
8
30
1300
2040
1200
12
10
45
28
ꢀ: Under development
18
3-1. Heat Dissipation Characteristic
Thermal resistance
TFP with mounting area 33% less than that of the TO-220SM offers Rth (ch-c) and Rth (ch-a)
almost equivalent to those of the TO-220SM (when mounted on an HIT board).
Actual rating / heat resistance between channel and case
(with infinite heat dissipation heat sink mounted)
Actual rating / heat resistance between channel and ambient
(with 3 cm × 3 cm HIT mounted)
100
100
TFP
TO-220SM
10
10
TFP
TO-220SM
1
1
0.1
0.1
Single pulse
100 1000
Single pulse
0.01
0.001
0.01
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
Pulse Width t
w
(S)
Pulse Width tw (S)
10
9
TFP: 2SK3389
TO-220SM:
equivalent to 2SK3389
2.8
Unit: mm
4.5
Application of DC current (with infinite heat dissipation heat sink mounted)
The source fin of the TFP generates less heat than the source lead of the TO-220SM due to the TFP'S efficient heat dissipation.
TFP: 2SK3389 30 V, 75 A, 5 mΩ Max
TO-220SM: equivalent to 2SK3389
160
160
140
140
Channel temperature
Channel temperature
120
120
Drain fin temperature
Drain fin temperature
100
100
Source lead
temperature
Source fin temperature
80
80
60
40
20
0
60
40
20
0
0
50
Drain Current I
100
(A)
150
0
50
Drain Current I
100
(A)
150
D
D
Measured point
Drain fin
Measured point
Drain fin
Source fin
Source lead
19
Power MOSFET Characteristics
3-2. For Stable Circuit Operation and High-current, High-speed Switching
Stable circuit operation
The advantage of MOSFETs is that, because of
their high input impedance, they allow high
output control with low power drive. However,
G
Load
Input control signal
S1
their disadvantage is that they are susceptible
D
to malfunction due to noise. TFP Series devices
S2
High load current
have four pins, allowing the input drive to be
kept separate from the outputs, thus reducing
the risk that the outputs will affect the input.
L-component influence on high-current, high-speed switching
Lead impedance, which causes problems with high-current, high-speed switching in DC/DC converters, is reduced.
R Load
High-current, high-speed switching
D
increases the influence of the
L-component between the source
and GND.
V
DD
Use of the S1 pin for gate input
signal return stabilizes circuit
operation by eliminating the
influence of the L-component.
G
VL = L (di/dt)
S2
S1
TFP
TO-220SM
High impedance
20
Switching waveform
When the S1 pin is used
for input signal return
(4 pins):
When the S1 pin is not
used for input signal return
(3 pins):
Shorter rise time
The four-pin structure
results in a shorter rise
time and more stable
switching, all of which help
to reduce the risk of
Stable circuit operation
t
r
= 5.4 ns, ton = 25.1 ns
DS turend on at 40%
tr = 4.6 ns, ton = 22.1 ns
V
abnormal oscillation.
3-pin, 4-pin
4-pin
VGS = 2V/div, VDS = 5V/div, tW = 20ns/div
VGS = 2V/div, VDS = 5V/div, tW = 100ns/div
3-pin
VGS = 2V/div, VDS = 5V/div, tW = 100ns/div
Insert a coil of L = 17 nH between gate and source
21
Power MOSFET Characteristics
4. TO-220SIS π-MOS IV / VI Series
ꢀꢀFeatures
• The shorter the standoff height is achieved, the lower the product height on a PCB will be; hence, the mounting height is
reduced by approximately 2.8 mm as compared to the existing package, TO-220NIS. This contributes to equipment's size
reduction thinner size.
• The chip design optimization reduced Qg characteristics. Also, the switching characteristics realized 10-% faster than that of
exsisting products.
• Improved heat dissipation by employing a Cu connector.
ꢀꢀPackage Dimensions
Existing package: TO-220NIS
TO-220SIS
New package
10
ø3.2
4.5
4.5
2.7
10
ø3.2
L
1–
L = 2.8
2
2.7
L
1
L
2
Board
Unit: mm
ꢀꢀLine-up
Maximum Ratings
RDS(ON) max (Ω)
Qg typ.
(nC)
CiSS typ.
(pF)
Conventional Products
Series
New Products
VDSS (V)
450
ID (A)
2
VGS = 10V
2.45
1.5
VGS = 4V
9
16
28
42
9
330
550
2SK3543
2SK2662
2SK2543
2SK2842
2SK3067
2SK2750
2SK2545
2SK2996
2SK2843
2SK3757
2SK3563
2SK3561
2SK3568
2SK3767
2SK3567
2SK3562
2SK3667
2SK3569
2SK3797
2SK3566
2SK3564
2SK3798
2SK3565
2SK3742
2SK3799
ꢀ
5
500
600
8
0.85
0.52
4.5
1050
1500
320
12
2
π-MOS VI
3.5
6
2.2
17
28
33
42
(62)
12
17
550
1.25
1.0
1050
1300
1500
(3150)
470
7.5
10
(13)
2.5
3
0.75
(0.45)
6.4
ꢀ
ꢀ
2SK2718
2SK2700
4.3
700
4
3.5
π-MOS IV
900
5
2.5
28
25
1150
1150
2SK2717
2SK2717
5
2.5
(8)
(1.4)
ꢀ: Under development
22
ꢀꢀImproved Heat Dissipation
<Conventional design>
<TO-220SIS>
Power dissipation
efficiency
improvement
Generated heat
from the chip surface is
dissipated to the pins on the
both ends via the
connectors.
ꢀꢀComparison of Electrical Characteristics with Conventional and New Products
Conventional Product
2SK2717
New Products
2SK3565
V
DSS(V)
900
5
900
5
I
D
(A)
R
DS(ON)(Ω)
2.5(max)
45(typ.)
200(typ.)
2.5(max)
28(typ.)
170(typ.)
Qg(nC)
toff(ns)
Conventional product: 2SK2717
New product: 2SK3565
Qg
50
Qg
50
Switching-Off Waveform Comparison
45
45
40
40
35
35
ID = 2 A/div
28 (typ.)
30
30
25
20
25
20
2SK3565
15-% improvement on
toff characteristics as
compared to the
V
GS = 2 V/div
2SK2717
toff
toff
conventional product
250
230
210
190
170
150
250
230
210
190
170
150
V
DS = 50 V/ns
t = 50 ns/div
typ.
23
Power MOSFET Characteristics
2
5. L -π-MOS V Series
ꢀꢀHigh-integration (4.4 M cells/inch2), ultra-low On-resistance series based on original technologies
2
• On-resistance per unit area reduced by 15% (compared to L -π-MOS IV, RDS(ON) max)
• Operation at logic level voltage [VGS = 4-V drive] (Vth = 0.8 V to 2.0 V)
• Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode
• Protection zener diode between gate and source
ꢀꢀN-ch product line-up
R
DS(ON) (Ω)
R
DS(ON) (Ω)
Qg
typ.
(nC)
V
DSS
(V)
I
D
(A)
PD
Part Number
Package Type
V
GS
I
D
(A)
V
GS
ID
(W)
typ.
max
typ.
max
(V)
10
(V)
4
(A)
1
2SK2964
2SK2844
2SK3089
2SK3090
2SK3127
2SK3128
2SK3125
2SK2989
2SK2614
2SK2507
2SK2886
2SK3051
2SK2744
2SK2550
2SK2551
2SK2745
2SK2615
2SK2961
2SK2229
2SK2231
2SK2782
2SK2232
2SK2311
2SK2385
2SK2233
2SK2266
2SK2312
2SK2376
2SK2398
2SK2173
2SK2445
2SK2267
2SK2313
2SK2962
2SK2963
2SK2200
2SK2201
2SK2399
2SK2400
2SK2391
2SK2314
2SK2789
30
30
2
35
40
45
45
60
70
5
1.5
60
PW-Mini
0.13
0.016
0.025
0.016
0.0095
0.0095
0.0053
0.12
0.18
0.02
1
0.18
0.026
—
0.25
0.035
—
5.8
40
TO-220AB
TO-220FL/SM
TO-220FL/SM
TO-220FL/SM
TO-3P (N)
TO-3P (SM)
LSTM
18
20
25
25
30
30
2.5
10
12
25
25
25
25
25
25
1
4
18
—
—
—
—
—
1.3
5
10
10
30
50
0.03
—
—
—
—
—
4
23
10
10
10
10
10
10
30
60
0.02
—
—
39
30
65
0.012
0.012
0.007
0.15
—
—
66
30
150
150
0.9
40
—
—
66
30
—
—
130
6.5
25
50
0.24
0.055
0.058
0.027
—
0.33
0.08
0.08
0.036
—
50
20
25
45
45
45
45
50
50
2
DP
0.032
0.034
0.014
0.024
0.015
0.024
0.0072
0.007
0.23
0.046
0.046
0.02
4
50
30
TO-220NIS
TO-220NIS
TO-220FL/SM
TO-3P (N)
TO-3P (N)
TO-3P (N)
TO-3P (N)
PW-Mini
4
6
25
10
10
10
10
10
10
10
10
10
10
50
40
4
25
—
—
—
—
25
1
66
50
40
0.03
—
—
—
—
4
36
50
125
100
150
150
0.5
0.9
1.2
20
0.02
—
—
68
50
0.030
0.011
0.0095
0.3
—
—
36
50
—
—
130
130
6
50
0.011
0.33
0.26
0.2
0.016
0.44
0.38
0.3
60
4
60
2
LSTM
0.2
0.27
1
4
1
5.8
12
60
5
TPS
0.12
0.16
2.5
2.5
10
12
12
18
25
25
25
25
25
25
25
30
30
0.5
0.5
2
4
1.3
1.3
5
60
5
PW-Mold
DP
0.12
0.16
0.2
0.3
4
12
10
10
10
10
10
10
10
10
10
10
10
10
10
60
20
25
25
36
45
45
45
45
45
50
50
60
60
1
40
0.039
0.036
0.036
0.022
0.022
0.022
0.013
0.013
0.022
0.013
0.014
0.008
0.008
0.5
0.055
0.046
0.046
0.03
0.06
0.057
0.057
0.04
0.04
0.04
0.019
0.019
—
0.090
0.08
0.08
0.055
0.055
0.055
0.025
0.025
—
4
25
60
35
TO-220NIS
TO-220FL/SM
TO-220 NIS
TO-3P (N)
TO-220FL/SM
TO-220NIS
TO-220FL/SM
TO-3P (N)
TO-3P (N)
TO-3P (N)
TO-3P (L)
TO-3P (N)
LSTM
4
12
12
15
15
15
25
25
—
25
—
30
30
0.5
0.5
2
38
60
40
4
38
60
40
4
60
60
100
65
0.03
4
60
60
0.03
4
60
60
45
0.017
0.017
0.03
4
110
110
60
60
100
100
125
125
150
150
0.9
0.5
1.3
20
4
60
—
4
60
0.017
0.018
0.011
0.011
0.7
0.019
—
0.025
—
110
110
170
170
6.3
6.3
13.5
13.5
22
60
—
4
60
0.012
0.012
0.65
0.65
0.36
0.36
0.22
0.22
0.09
0.09
0.09
0.015
0.015
0.95
0.95
0.45
0.45
0.3
60
10
10
10
10
10
10
10
10
10
10
4
100
100
100
100
100
100
100
100
100
4
1
PW-Mini
0.5
0.7
4
3
TPS
0.28
0.35
4
3
PW-Mold
PW-Mold
TPS
0.28
0.35
2
4
2
5
20
0.17
0.23
2.5
2.5
10
15
15
4
2.5
2.5
10
15
15
5
1.2
35
0.17
0.23
0.3
4
22
20
27
27
TO-220NIS
TO-220AB
TO-220FL/SM
0.068
0.066
0.066
0.085
0.085
0.085
0.13
0.13
0.13
4
50
75
4
50
60
4
50
24
ꢀꢀP-ch product line-up
R
DS(ON) (Ω)
R
DS(ON) (Ω)
Qg
typ.
(nC)
V
(V)
DSS
I
D
PD
(W)
Part Number
Package Type
V
GS
I
D
V
GS
ID
(A)
typ.
max
typ.
max
(V)
– 10
– 10
– 10
– 10
– 10
– 10
– 10
– 10
– 10
– 10
– 10
– 10
– 10
– 10
– 10
– 10
– 10
(A)
– 1
(V)
– 4
– 4
– 4
– 4
– 4
– 4
– 4
– 4
– 4
– 4
– 4
– 4
– 4
– 4
– 4
– 4
– 4
(A)
– 1
2SJ511
2SJ525
2SJ537
2SJ360
2SJ507
2SJ377
2SJ438
2SJ378
2SJ349
2SJ401
2SJ334
2SJ402
2SJ508
2SJ509
2SJ380
2SJ412
2SJ464
– 30
– 30
– 2
– 5
1.5
1.3
0.9
0.5
0.9
20
PW-Mini
0.32
0.1
0.45
0.12
0.19
0.73
0.7
0.55
0.17
0.27
0.86
0.72
0.24
0.24
0.24
0.05
0.05
0.046
0.046
1.68
1.68
0.25
0.25
0.085
0.76
0.2
5.5
27
TPS
– 2.5
– 2.5
– 0.5
– 0.5
– 2.5
– 2.5
– 2.5
– 10
– 10
– 15
– 15
– 0.5
– 0.5
– 6
– 2.5
– 1.3
– 0.5
– 0.5
– 2.5
– 2.5
– 2.5
– 10
– 10
– 15
– 15
– 0.5
– 0.5
– 6
– 50
– 5
0.16
0.55
0.5
0.34
1.2
18
LSTM
– 60
– 1
PW-Mini
6.5
5.6
22
– 60
– 1
1.0
LSTM
– 60
– 5
PW-Mold
TO-220NIS
TPS
0.16
0.16
0.16
0.033
0.033
0.029
0.029
1.34
1.34
0.15
0.15
0.064
0.19
0.19
0.19
0.045
0.045
0.038
0.038
1.9
0.28
0.28
0.28
0.09
0.09
0.06
0.06
2.5
– 60
– 5
25
22
– 60
– 5
1.2
45
22
– 60
– 20
– 20
– 30
– 30
– 1
TO-220NIS
TO-220FL/SM
TO-220NIS
TO-220FL/SM
PW-Mini
90
– 60
100
45
90
– 60
110
110
6.3
6.3
48
– 60
100
1.5
0.9
35
– 100
– 100
– 100
– 100
– 100
– 1
1.9
2.5
LSTM
– 12
– 16
– 18
0.21
0.21
0.09
0.32
0.32
0.12
TO-220NIS
TO-220FL/SM
TO-220NIS
60
– 6
– 6
48
45
– 9
– 9
140
6. 2.5-V Drive π-MOS
V Series
ꢀꢀFeatures
• 2.5-V drive: Gate drive voltage reduced from 4 V to 2.5 V
• Vth = 0.5 V to 1.1 V: Designed to operate at high temperatures with threshold voltage width reduced from 1.2 V to 0.6 V
• Avalanche withstand capability: Built-in protection zener diode between gate and source; cell structure used to improve
avalanche withstand capability
ꢀꢀLine-up
Qg
typ.
(nC)
R
DS(ON)
max
(Ω)
R
DS(ON)
max
(Ω)
Maximum Ratings
Part Number
V
GS
(V)
I
D
(A)
V
GS
(V)
ID
(A)
Package Type
V
DSS(V)
I
D(A)
PD(W)
–16
–2
0.5
0.71
–4
–1.0
1.0
–2.5
–0.5
5
2SJ465
PW-Mini
PW-Mold
2SJ439
0.28
0.38
0.12
–16
–5
20
0.20
0.29
–4
–2.5
–2.5
–2.5
24
5
16
2
0.5
4
1.0
2.5
0.5
2SK2549
2SK2493
PW-Mini
PW-Mold
16
5
20
0.10
4
2.5
2.5
2.5
23
25
Power MOSFET Characteristics
7. U-MOS III (Trench Type) Series
High-integration is achieved using trench structure technique. Low-voltage driving (VGS = 4V) is
possible because of ultra-low On-resistance.
Planar structure
Source
Trench (U-MOS) structure
Gate
Source
Gate
Poly Si
N
N
N
N
P
Poly Si
N+
N+
N+
N+
P
P
P
N
P
P
N
N+
N+
Drain
Drain
ꢀꢀFeatures
• High density by the submicron technology (phase
2
2
I
= 10 M cell / inch , phase II = 30 M cell / inch )
2
• Reduces 60% RDS(ON) by per unit area (as compared to the maximum RDS(ON) of the conventional L -π-MOS
• Possible to operate by logic level voltage (VGS = 4 V)
V)
• Avalanche withstanding capability guarantee and progress in di/dt capability.
• Protection zener diode between gate and source
ꢀꢀLine-up
R
max
(mΩ)
DS(ON)
R
max
DS(ON)
Qg
typ.
(nC)
Maximum Ratings
Part
Number
Applications
Remarks
Package Type
V
GS(V)
I
D
(A)
V
GS(V)
I
D
(A)
V
DSS(V)
I
D(A)
PD(W)
(mΩ)
70
70
36
250
19
–
100
100
60
30
30
35
–5
35
75
45
70
40
65
30
20
35
46
10
10
10
15
4
4
15
68
68
2SK2466
2SK3084
2SK3236
2SJ668
TO-220NIS
TO-220FL/SM
TO-220NIS
PW-Mold
U-MOS
I
46
15
18
15
18
20
4
52
U-MOS II
Motor drive solenoids
Lamp drivers
–60
60
170
12.5
5.8
5.8
5.8
–10
10
10
10
10
–2.5
18
–4
4
–2.5
18
–
15
DC-DC converters
91
2SK3662
2SK3842
2SK3844
2SK3845
TO-220NIS
TFP
U-MOS III
60
125
45
38
–
196
196
196
60
23
–
–
–
TO-220NIS
TO-3P(N)
60
125
23
–
–
–
ꢀꢀFeatures of U-MOS II
[1] Reduces 60% RDS(ON) by per unit area
• RDS(ON) = 5.8 m (max) MOSFET housed in TO-220 package
• Operate with logic level voltage (VGS = 4 V)
V
GS = 10 V
V
GS = 4 V
I
D
- VDS
ID - VDS
50
50
2SK2985
Conventional
devices
2SK2985
40
30
20
10
40
30
20
10
Conventional
devices
Common
source
= 25ºC
Common
source
T
C
T
C
= 25ºC
0
0
0
0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8 1.0
Drain-source Voltage VDS (V)
Drain-source Voltage VDS (V)
26
8. π-MOSVII Series
With employing submicron technology and reducing gate charge, this latest series realized
extremely fast speed and low RDS(ON)
.
ꢀꢀFeatures
ꢀꢀDynamic Input / Output Characteristics
• Low RDS(ON)
• Total gate charge (Qg) reduction
• Fast speed switching
• High avalanche withstanding capability
20
2SK3669
2SK2399
16
(π-MOS VII
)
(π-MOS
V)
ꢀꢀApplications
• Digital amps
12
8
65% reduction
• DC-DC converters
• Motor drives
Common source
Tc = 25 ºC
4
I
D
= 10 A
V
DD = 80 V
ꢀꢀLine-up
Pulse test
0
R
max
(mΩ)
DS(ON) Ciss
Crss
typ.
(pF)
Qg
typ.
(nC)
Qsw
Maximum Ratings
0
5
10
15
20
25
30
typ.
(pF)
typ. Package Type
(nC)
Part Number
Total gate charge Qg(nC)
V
DSS(V)
100
I
D(A)
10
125
480
9
8.0
4.2
2SK3669
PW-Mold
ꢀꢀComparison of Switching Characteristics with π-MOS
V
V
V
V
DS = 10 V/div
V
DS = 10 V/div
On
0
0
V
GS = 2 V/div
GS = 2 V/div
10 ns/div
10 ns/div
2SK2399 (π-MOS
V)
2SK3669 (π-MOS VII)
GS = 2 V/div
V
DS = 10 V/div
Off
0
0
VDS = 10 V/div
VGS = 2 V/div
50 ns/div
50 ns/div
2SK2399 (π-MOS
V)
2SK3669 (π-MOS VII)
27
Power MOSFET Characteristics
9. π-MOS
V Series (VDSS = 150 V to 250 V)
200-V Series for Cs / Cy switching in monitors
ꢀꢀFeatures
•
•
•
•
•
Reduced On-resistance per unit area
Chip size smaller than conventional chips and device cost reduced
Superior breakdown voltage characteristics due to optimized cell structure
Guaranteed absolute maximum voltage rating between gate and source: VGSS = ±20 V
Products with VDSS of 200 suitable for resonance capacitance (Cs/Cy)
ꢀꢀLine-up
Maximum Ratings
R
DS(ON)
Qg
typ.
(nC)
Applications
Part Number
Package Type
(Ω)
V
(V)
DSS
I
D
(A)
PD
I
D
(A)
V
GS
(W)
(V)
–10
–10
–10
–10
–10
–10
10
typ.
max
–
2SJ618
–180
–10
–5
–2.5
–2
–5
–6.5
5
130
30
TO-3P(N)
TO-220NIS
PW-Mold
0.37
1.0
–5
18
20
10
24
22
29
12
57
–
2SK407
0.8
1.6
1.85
1.0
0.6
0.36
0.08
–
–2.5
–1.5
–1.0
–2.5
–3
–200
2SJ567
20
2.0
2SJ610
20
PW-Mold
2.55
1.25
0.8
2SJ512
–250
30
TO-220NIS
TO-220NIS
PW-Mold
2SJ516
35
2SK3205
2SK2882
2SK3497
2SK2992
2SK2835
2SK2381
2SK2920
2SK2350
2SK2965
2SK2382
2SK2401
2SK3176
2SK3462
2SK3342
2SK2417
2SK2914
2SK2508
2SK2598
2SK2993
2SK2967
2SK2995
20
0.5
2.5
9
150
180
18
10
1
45
TO-220NIS
TO-3P(N)
PW-Mini
0.12
0.15
3.5
10
130
1.5
1.3
25
10
5
2.2
10
0.5
2.5
2.5
2.5
5
3
5
TPS
0.56
0.56
0.56
0.26
0.15
0.13
0.13
0.8
10
10
10
10
17
30
40
40
125
12
10
20
20
40
40
100
132
132
5
TO-220NIS
PW-Mold
0.8
10
DC-DC converters
Monitors
Motor controllers
5
20
0.8
10
200
8.5
11
15
15
30
3
30
TO-220NIS
TO-220NIS
TO-220NIS
TO-220FL/SM
TO-3P(N)
PW-Mold
0.4
10
35
0.26
0.18
0.18
0.052
1.7
10
5.5
10
45
10
75
10
10
150
20
0.038
1.2
10
15
10
1.5
2.5
3.5
3.5
6.5
6.5
10
4.5
7.5
7.5
13
13
20
30
30
20
PW-Mold
0.8
1.0
10
30
TO-220NIS
TO-220AB
TO-220NIS
TO-220FL/SM
TO-220FL/SM
TO-3P(N)
TO-3P(N)IS
0.42
0.42
0.18
0.18
0.082
0.048
0.048
0.5
10
20
0.5
10
250
45
0.25
0.25
0.105
0.068
0.068
10
60
10
100
150
90
10
10
15
10
15
28
10. π-MOS
V Series (VDSS = 400 V to 700 V)
High-performance series for 100-V AC input-switching power supplies
ꢀꢀFeatures
•
•
•
•
Low-drive-power, high-speed (Q reduced by 40%, tf by 30%)
g
Guaranteed VGSS = ±30 V for every device in product line
Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode
Protection zener diode between gate and source
ꢀꢀLine-up
Qg
typ.
(nC)
RDS(ON)
Maximum Ratings
(Ω)
Applications
Part Number
VDSS
(V)
ID
(A)
PD
(W)
Package Type
VGS
ID
(V)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
(A)
typ.
4.2
max
5.5
2SK3498
2SK2679
2SK2838
2SK2952
2SK2841
2SK2949
2SK3472
2SK3126
2SK2998
2SK3302
2SK3471
2SK2599
2SK2862
2SK2661
2SK2662
2SK2991
2SK2542
2SK2543
2SK2776
2SK2601
2SK2842
2SK3068
2SK2916
2SK2698
2SK2917
2SK2837
2SK3117
2SK3132
2SK3371
2SK2846
2SK2865
2SK3067
2SK2750
2SK3085
2SK2544
2SK2545
2SK2777
2SK2602
2SK2996
2SK2843
2SK2866
2SK2889
2SK2699
2SK2953
2SK2915
2SK3265
2SK3453
400
400
400
400
400
400
450
450
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
1
5.5
5.5
8.5
10
10
1
20
PW-Mold
0.5
3
5.7
17
17
34
34
34
5
35
TO-220NIS
TO-220FL/SM
TO-220NIS
TO-220AB
TO-220FL/SM
PW-Mold
0.84
0.84
0.4
1.2
40
1.2
3
40
0.55
0.55
0.55
4.6
5
80
0.4
5
80
0.4
5
20
4.0
0.5
5
35
3.8
3.8
3.8
9
10
0.5
0.5
0.5
2
40
TO-220NIS
LSTM
0.48
10
0.65
18
0.9
1.3
0.5
1.3
25
0.25
0.25
0.25
1
TPS
10
18
PW-Mini
10
18
TPS
2.9
3.2
9
3
TO-220NIS
TO-220AB
TO-220NIS
TO-220FL/SM
TO-220AB
TO-220NIS
TO-220FL/SM
TO-3P(N)
TO-220NIS
TO-220FL/SM
TO-3P(N)IS
TO-3P(N)
TO-3P(N)IS
TO-3P(N)
TO-3P(SM)
TO-3P(L)
2.9
3.2
1
17
17
17
30
30
30
30
45
45
58
58
80
80
80
280
9
5
75
1.35
1.35
1.35
0.75
0.75
0.75
0.56
0.4
1.5
2.5
2.5
2.5
4
5
35
1.5
5
50
1.5
8
80
0.85
0.85
0.85
1.0
8
40
4
8
65
4
10
12
12
14
15
18
20
20
50
1
125
40
5
0.52
0.52
0.4
6
100
80
0.4
6
AC 115 V
switching power
supplies
Ballst inverters
Motor controllers
0.35
0.35
0.21
0.21
0.21
0.07
6.4
7
150
90
0.4
7
0.27
0.27
0.27
0.095
9.0
10
10
10
25
0.5
1
150
150
250
20
PW-Mold
9
2
1.3
20
TPS
4.2
5.0
9
2
PW-Mold
4.2
5.0
1
9
2
25
TO-220NIS
TO-220NIS
TO-220AB
TO-220AB
TO-220NIS
TO-220FL/SM
TO-3P(N)
TO-220NIS
TO-220NIS
TO-220AB
TO-220FL/SM
TO-3P(N)
TO-3P(N)IS
TO-3P(N)
TO-220NIS
TO-3P(N)IS
4.2
5.0
1
20
20
30
30
30
30
38
45
45
45
58
80
80
53
53
3.5
3.5
6
35
1.7
2.2
1.8
1.8
3
75
1.7
2.2
80
0.9
1.25
1.25
1.25
1.25
1.0
6
40
0.9
3
6
65
0.9
3
6
125
45
0.9
3
10
10
10
10
12
15
16
10
10
0.74
0.54
0.54
0.54
0.5
5
45
0.75
0.75
0.75
0.65
0.4
5
125
100
150
90
5
5
6
0.31
0.31
0.72
0.72
8
150
45
0.4
8
1.0
5
80
1.0
5
29
Power MOSFET Characteristics
11. High-Speed π-MOS
V Series (VDSS = 450 V to 600 V)
To allow the development of high-efficiency portable equipment, Toshiba has developed two
Series of high-speed Power MOSFET devices. The two series are as follows:
The High-Speed Switching Series for AC adapters and switching power supplies
The High-Speed Switching Series for motor controllers and inverter circuits
• High-Speed Switching Series: Achieves faster switching speed than the existing π-MOS V Series which are
currently well-established in the marketplace (toff-switching is 38% faster).
• High-Speed Diode Series: Achieves faster parasitic diode speed by using lifetime control (trr 100 ns).
ꢀꢀLine-up
• MACH Series
RDS(ON)
max
(Ω)
Qg
typ.
(nC)
Equivalent
Conventional
Device
Maximum Ratings
Applications
Part Number
V
GS
ID
Package Type
V
DSS(V)
I
D(A)
P
D
(W)
40
65
(V)
10
10
10
10
10
10
(A)
450
450
450
600
600
600
10
10
13
6
0.65
0.65
0.4
5
23
23
34
25
28
35
2SK3126
—
TO-220NIS
2SK3310
2SK3309
2SK3403
2SK3312
2SK3437
2SK3399
5
TO-220FL/SM
TO-220FL/SM
TO-220FL/SM
TO-220FL/SM
TO-220FL/SM
AC adapters
Switching power
supplies
—
100
65
6
—
1.25
1
3
10
10
80
5
2SK2996
2SK2866
100
0.75
5
• High-speed diode series (HSD Series) line-up
RDS(ON)
max
(Ω)
t
Equivalent
Conventional
Device
rr
Maximum Ratings
typ.
(ns)
Applications
Part Number
V
GS
ID
Package Type
V
DSS(V)
I
D(A)
P
D
(W)
(V)
10
10
10
10
10
10
(A)
2.5
2.5
6
2SK3417
2SK3316
2SK3313
2SK3314
2SK3131
2SK3130
500
500
500
500
500
600
5
5
50
TO-220FL/SM
TO-220NIS
TO-220NIS
TO-3P(N)
1.8
60
60
2SK2662
2SK2662
2SK2842
2SK2698
2SK3132
2SK2545
1.8
35
40
Motor controllers
Inverters
Switching power
supplies
12
15
50
6
0.62
0.49
0.11
1.55
90
150
250
40
7
105
105
85
TO-3P(L)
25
3
TO-220NIS
ꢀꢀFeatures of MACH Series
Switching loss reduced by 40%
ꢀꢀCharacteristics of high-speed diode series
Faster parasitic diode
2SK3313 (high speed)
2SK3310 (high speed)
VDS=50V/div
ID=0.5A/div
ID=10A/div
0
0
0
VGS=5V/div
PD=0.5µJ/div
200ns/div
100ns/div
2SK3126 (conventional device)
2SK2842 (conventional device)
VDS=50V/div
ID=0.5A/div
ID=10A/div
0
0
PD=0.5µJ/div
VGS=5V/div
200ns/div
0
100ns/div
30
12. π-MOS III Series (VDSS = 800 V to 1000 V)
High-performance, high-speed devices for 200-V AC input-switching power supplies
ꢀꢀFeatures
• Low drive-power, high-speed devices (Qg reduced by 60%, tf reduced by 25%)
• Guaranteed VGSS = ±30 V.
• Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode
• Protection zener diode between gate and source
ꢀꢀLine-up
• π-MOS III
Qg
typ.
(nC)
R
DS(ON) (Ω)
Maximum Ratings
Package Type
Part Number
V
DSS (V)
I
D
(A)
3
PD (W)
typ.
3.0
3.0
1.9
1.9
1.9
1.3
1.0
1.0
15
max
3.6
3.6
2.2
2.2
2.2
1.7
1.2
1.2
20
V
GS(V)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
ID(A)
25
25
34
34
34
55
68
68
6
1.5
15
2SK2603
2SK2883
2SK2605
2SK2884
2SK2604
2SK2746
2SK2606
2SK2607
2SK3301
2SK2845
2SK2733
2SK2718
2SK2608
2SK2700
2SK2719
800
800
800
800
800
800
800
800
900
900
900
900
900
900
900
100
75
TO-220AB
3
TO-220FL/SM
TO-220NIS
TO-220FL/SM
TO-3P(N)
3.0
3.0
3.0
3.5
4.0
4.0
0.5
0.5
0.5
1.5
1.5
1.5
1.5
3.0
3.0
2.5
3.5
4.0
4.0
4.0
4.0
8.0
5
45
100
125
150
85
5
5
7
TO-3P(N)
TO-3P(N)IS
TO-3P(N)
PW-Mold
DP
8
150
20
9
1
15
15
21
25
25
25
45
45
28
55
58
70
58
70
65
8.0
8.0
5.6
3.73
3.7
3.7
2.3
2.3
2.0
1.1
1.05
1.2
1.05
1.4
1.4
9.0
9.0
6.4
4.3
4.3
4.3
2.5
2.5
2.5
1.4
1.25
1.4
1.25
1.7
1.7
1
40
60
TO-220AB
TO-220NIS
TO-220AB
TO-220NIS
TO-3P(N)
1
2.5
3
40
100
40
3
3
125
150
45
2SK2610
2SK2717
2SK3700
2SK2749
2SK2847
2SK3017
2SK2611
2SK2968
2SK2613
900
900
900
900
900
900
900
900
5
5
TO-3P(N)
TO-220NIS
TO-220NIS
TO-3P(N)
TO-3P(N)IS
TO-3P(N)IS
TO-3P(N)
TO-3P(N)
TO-3P(N)
5
45
7
150
85
8
8.5
9
90
150
150
150
10
8
1000
• π-MOS IV
Qg
typ.
(nC)
R
DS(ON) (Ω)
Maximum Ratings
Package Type
Part Number
V
DSS (V)
800
I
D
(A)
7
P
D
(W)
typ.
1.35
1.3
max
1.7
V
GS(V)
10
I
D
(A)
3.5
4.0
35
38
2SK3633
2SK3473
150
150
TO-3P(N)
TO-3P(N)
900
9
1.6
10
31
Power Modules
Power modules enable high-density mounting and are the simples of all multi-chip devices in
structural terms. Use of these modules enables the construction of compact power supplies for
electronic equipment.
ꢀꢀLine-up
• S-10M Series (4in1)
Maximum Ratings
Electrical Characteristics (Ta = 25ºC)
Polarity and
Circuit
Configuration
P
T
RDS(ON)
4-V Drive
Part Number
I
D
V
(V)
DSS
(Ta = 25ºC)
(Ω)
V
GS
ID
(A)
(A)
(W)
(V)
(typ.)
0.12
0.28
0.16
0.20
0.12
0.16
(max)
0.16
0.35
0.19
0.30
0.16
0.19
MP4210
MP4209
MP4211
MP4208
60
5
3
4
4
4
4
10
10
2.5
2.0
ꢀ
ꢀ
ꢀ
ꢀ
N-ch x 4
P-ch x 4
100
–60
–60
60
–5
–5
5
–10
–10
10
–2.5
–2.5
2.5
N-ch x 2 +
P-ch x 2
ꢀ
MP4212
4
–60
–5
–10
–2.5
• S-12M Series (4in1, 6in1)
Maximum Ratings
Electrical Characteristics (Ta = 25ºC)
Polarity and
Circuit
Configuration
RDS(ON)
P
T
4-V Drive
Part Number
I
D
V
(V)
DSS
(Ω)
(Ta = 25ºC)
V
GS
ID
(A)
(A)
(W)
(V)
(typ.)
0.28
(max)
0.35
N-ch x 2 +
P-ch x 2
ꢀ
MP4411
100
100
3
5
4.4
10
2.0
MP4412
MP4410
4.4
4.4
0.17
0.23
10
2.5
ꢀ
ꢀ
with FB-Di
N-ch x 4
60
60
5
5
0.12
0.12
0.16
0.16
0.16
0.19
10
10
2.5
2.5
N-ch x 3 +
P-ch x 3
MP6404
4.4
ꢀ
–60
–5
–10
–2.5
• F-12M Series (4in1, 6in1)
Maximum Ratings
Electrical Characteristics (Ta = 25ºC)
Polarity and
Circuit
Configuration
RDS(ON)
P
T
4-V Drive
Part Number
I
D
V
(V)
DSS
(Ω)
(Ta = 25ºC)
V
GS
ID
(A)
(A)
(W)
(V)
(typ.)
0.17
(max)
0.23
N-ch x 2 +
P-ch x 2
MP4711
100
5
36
10
2.5
ꢀ
with FB-Di
32
Power MOSFET Product List
Main Characteristics
Part
Main Characteristics
Part
Number
Series
π-MOS
Package Type
Series
Package Type
VDSS
(V)
ID
(A)
R
DS(ON) max Page
(Ω)
VDSS
(V)
ID
(A)
R
DS(ON) max Page
(Ω)
Number
2SK1486
π-MOS .5 TO-3P(L)
300
1000
180
32
12
10
0.095
1.0
– 10
– 12
– 14
– 14
2SJ200
2SJ201
2SJ304
2SJ312
TO-3P(N)
– 180
– 200
– 60
0.83
0.63
0.12
0.12
2SK1489
2SK1529
2SK1530
2SK1544
TO-3P(L)
TO-3P(N)
TO-3P(N)
π-MOS .5
π-MOS
π-MOS
TO-3P(N)
2
0.83
TO-220NIS
TO-220FL/SM
TO-220NIS
PW-Mold
L -π-MOS
2
π-MOS
– 60
200
500
12
25
0.63
0.2
L -π-MOS
π-MOS .5 TO-3P(L)
– 1
– 5
2SJ313
2SJ315
π-MOS
– 180
– 60
5.0
2
0.25
TO-220FL/SM
L -π-MOS
2SK1930
2SK2013
1000
180
4
1
3.8
5.0
π-MOS .5
π-MOS
2
TO-220NIS
– 30
– 1
2SJ334
2SJ338
2SJ349
2SJ360
2SJ377
2SJ378
L -π-MOS
TO-220NIS
– 60
– 180
– 60
P 25
0.038
5.0
2SK2162 π-MOS
180
60
5.0
PW-Mold
TO-3P(N)
1
π-MOS
PW-Mold
TO-220NIS
PW-Mini
PW-Mold
TPS
2
2
2SK2173
2SK2200
50
0.017
P 24
L -π-MOS
– 20
– 1
P 25
P 25
P 25
P 25
P 25
P 25
L -π-MOS
0.045
0.73
2
2
L -π-MOS
TPS
100
100
3
3
0.35
0.35
P 24
P 24
L -π-MOS
– 60
2
2
2SK2201 L -π-MOS
PW-Mold
– 5
– 5
L -π-MOS
– 60
– 60
0.19
0.19
2
2
L -π-MOS
2SK2229 L -π-MOS
TPS
60
60
60
60
5
5
0.16
0.16
0.046
0.03
P 24
P 24
P 24
P 24
2
2
2SK2231 L -π-MOS
PW-Mold
TO-220NIS
TO-3P(N)
– 12
– 20
– 30
– 5
L -π-MOS
TO-220NIS
– 100
2SJ380
2SJ401
2SJ402
2SJ407
0.21
2
2
2SK2232 L -π-MOS
25
45
L -π-MOS
TO-220FL/SM – 60
TO-220FL/SM – 60
0.045
2
2
L -π-MOS
2SK2233
P 25
P 28
L -π-MOS
0.038
1.0
2
TO-220NIS
– 200
2SK2266 L -π-MOS
TO-220FL/SM
60
45
0.03
P 24
P 24
π-MOS
2
2
– 16
– 5
P 25
P 25
P 25
2SK2267 L -π-MOS
TO-3P(L)
60
700
60
60
5
0.011
1.7
L -π-MOS
TO-220FL/SM – 100
2SJ412
2SJ438
0.21
0.19
2
2SK2274
TO-220NIS
TO-220FL/SM
TO-220NIS
TO-3P(N)
L -π-MOS
TO-220NIS
– 60
– 16
π-MOS .5
2
π-MOS
π-MOS
– 5
– 9
2SK2311 L -π-MOS
25
45
60
0.046
0.017
0.011
P 24
P 24
P 24
2SJ439
2SJ440
2SJ464
PW-Mold
0.2
0.8
2
2SK2312
60
TO-3P(N)IS
L -π-MOS
– 180
2
2
2SK2313 L -π-MOS
60
L-π-MOS
– 18
– 2
TO-220NIS
PW-Mini
– 100
– 16
P 25
P 25
0.09
0.71
2
L -π-MOS
2SK2314
TO-220AB
TO-220NIS
100
200
27
0.085
0.4
P 24
P 28
2SJ465
2SJ507
2SJ508
π-MOS
2
2SK2350 π-MOS
8.5
LSTM
– 60
– 1
– 1
0.7
1.9
P 25
P 25
L-π-MOS
2
2
PW-Mini
– 100
L -π-MOS
2SK2376
TO-220FL/SM
TO-220NIS
60
45
5
0.017
0.8
P 24
P 28
L-π-MOS
2
2SK2381 π-MOS
200
LSTM
– 100
– 30
– 1
– 2
1.9
P 25
P 25
P 28
P 28
2SJ509
2SJ511
2SJ512
2SJ516
2SJ525
2SJ537
L-π-MOS
2
π-MOS
PW-Mini
TO-220NIS
TO-220NIS
0.45
1.25
0.8
2SK2382
TO-220NIS
TO-220NIS
TO-220NIS
200
60
15
36
20
0.18
0.03
0.085
P 28
P 24
P 24
L-π-MOS
2
– 250
– 250
– 5
2SK2385 L -π-MOS
π-MOS
π-MOS
2
L -π-MOS
100
– 6.5
– 5
2SK2391
2
2
2SK2398
2SK2399
2SK2400
2SK2401
2SK2417
2SK2445
L -π-MOS
TO-3P(N)
PW-Mold
60
100
100
200
250
60
45
5
0.03
0.23
0.23
0.18
0.5
P 24
P 24
L -π-MOS
TPS
– 30
– 50
0.12
0.19
P 25
P 25
2
2
LSTM
– 5
L -π-MOS
L -π-MOS
2
– 2.5
– 2
L -π-MOS
TPS
5
P 24
P 28
P 28
P 24
π-MOS
π-MOS
π-MOS
PW-Mold
PW-Mold
TO-3P(N)
TFP
– 200
– 250
– 180
– 100
P 28
P 28
P 28
P 18
P 18
P 26
2.0
2SJ567
2SJ610
2SJ618
2SJ619
π-MOS
π-MOS
TO-220FL/SM
TO-220NIS
TO-3P(N)
15
7.5
50
2.55
0.37
0.21
– 10
– 16
2
2
L -π-MOS
L -π-MOS
0.018
2
– 18
– 5
4
2SJ620
L -π-MOS
TFP
– 100
– 60
1000
1000
100
0.09
0.17
2SK2466
2SK2467
2SK2493
2SK2507
2SK2508
U-MOS
π-MOS
π-MOS
TO-220NIS
TO-3P(N)IS
PW-Mold
100
180
16
30
9
0.046
0.8
P 26
U-MOS
PW-Mold
2SJ668
π-MOS .5 TO-220AB
π-MOS .5 TO-3P(N)
3.8
5
0.1
P 25
P 24
P 28
P 29
P 29
P 29
2SK1119
2SK1120
2SK1359
2SK1365
2SK1381
2SK1382
2
L -π-MOS
TO-220NIS
TO-220NIS
50
25
13
0.046
0.25
8
1.8
π-MOS
π-MOS
π-MOS .5
π-MOS .5
250
TO-3P(N)
TO-3P(N)IS
TO-3P(N)
TO-3P(L)
5
3.8
1000
100
7
1.8
2SK2542
2SK2543
2SK2544
TO-220AB
TO-220NIS
TO-220AB
500
500
600
8
8
6
0.85
0.85
1.25
2
L -π-MOS
50
60
0.032
0.02
π-MOS
π-MOS
2
100
L -π-MOS
33
Power MOSFET Product List
Main Characteristics
Part
Main Characteristics
Part
Number
Series
π-MOS
Package Type
Series
π-MOS
Package Type
VDSS
(V)
ID
(A)
R
DS(ON) max Page
(Ω)
VDSS
(V)
ID
(A)
RDS(ON) max Page
(Ω)
Number
2SK2842
2SK2843
2SK2844
2SK2545
2SK2549
TO-220NIS
PW-Mini
600
16
6
1.25
0.29
P 29
P 25
500
600
30
12
10
35
0.52
0.75
0.02
P 29
P 29
P 24
TO-220NIS
TO-220NIS
TO-220AB
DP
π-MOS
2
π-MOS
2
2
2SK2550
2SK2551
2SK2598
2SK2599
2SK2601
2SK2602
2SK2603
2SK2604
L -π-MOS
TO-3P(N)
TO-3P(N)
TO-220FL/SM
TPS
50
50
45
50
13
2
0.03
0.011
0.25
3.2
P 24
P 24
P 28
P 29
P 29
P 29
P 31
P 31
L -π-MOS
2
2SK2845 π-MOS
900
600
900
500
1
2
8
3
9.0
5.0
1.4
3.2
P 31
P 29
P 31
P 29
L -π-MOS
2SK2846
250
500
500
600
800
800
π-MOS
TPS
π-MOS
2SK2847 π-MOS
TO-3P(N)IS
TO-220NIS
PW-Mold
TO-220AB
TO-220NIS
π-MOS
π-MOS
π-MOS
2SK2862
2SK2865
2SK2866
2SK2882
TO-3P(N)
TO-3P(N)
TO-220AB
TO-3P(N)
10
6
1.0
π-MOS
π-MOS
π-MOS
π-MOS
1.25
3.6
600
600
150
2
10
18
5.0
P 29
P 29
P 28
P 31
P 31
P 24
P 29
P 28
P 29
P 29
P 29
P 28
P 29
P 29
P 29
P 24
P 24
P 24
P 24
P 28
P 28
P 29
P 26
P 26
P 26
P 22
P 29
P 28
P 28
3
0.75
0.12
π-MOS
π-MOS
5
2.2
π-MOS
π-MOS
2SK2605
2SK2606
TO-220NIS
TO-3P(N)IS
800
800
5
2.2
1.2
P 31
P 31
TO-220FL/SM
TO-220FL/SM
TO-220NIS
TO-220FL/SM
TO-220AB
2SK2883 π-MOS
800
800
50
3
5
3.6
8.5
2SK2884 π-MOS
2.2
2
π-MOS
π-MOS
2SK2607
2SK2608
TO-3P(N)
TO-220AB
800
900
9
3
1.2
4.3
P 31
P 31
2SK2886
45
10
7.5
16
14
18
20
10
8.5
15
2
0.02
L -π-MOS
2SK2889 π-MOS
600
250
600
500
500
200
400
400
600
60
0.75
0.5
2SK2914
2SK2915
2SK2916
2SK2917
2SK2920
2SK2610
2SK2611
π-MOS
π-MOS
π-MOS
TO-3P(N)
TO-3P(N)
900
900
5
9
2.5
1.4
P 31
P 31
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
TO-3P(N)
0.4
TO-3P(N)IS
TO-3P(N)IS
0.4
2SK2613
2SK2614
2SK2615
2SK2661
2SK2662
2SK2679
2SK2698
2SK2699
2SK2700
2SK2717
2SK2718
TO-3P(N)
DP
1000
50
8
20
2
1.7
0.046
0.3
1.5
1.5
1.2
0.4
0.65
4.3
2.5
6.4
4.3
9.0
P 32
P 24
P 24
P 29
P 29
P 29
P 29
P 29
P 29
P 29
P 29
P 29
P 29
2
L -π-MOS
0.27
0.8
2
L -π-MOS
PW-Mini
60
PW-Mold
TO-220AB
TO-220NIS
TO-220NIS
TO-3P(N)
TO-3P(N)
TO-220NIS
TO-220NIS
TO-220NIS
TO-3P(N)
TO-220AB
500
500
400
500
600
900
900
900
900
900
5
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
2SK2949 π-MOS
TO-220FL/SM
0.55
0.55
0.4
5
2SK2952
2SK2953
2SK2961
2SK2962
2SK2963
TO-220NIS
TO-3P(N)IS
LSTM
π-MOS
π-MOS
5.5
15
12
3
2
0.27
0.7
L -π-MOS
2
100
100
30
1
LSTM
L -π-MOS
2
L -π-MOS
PW-Mini
1
0.7
2
5
2
0.18
0.26
0.068
1.25
5.8
L -π-MOS
PW-Mini
2SK2964
2SK2965
2.5
3
π-MOS
TO-220NIS
200
250
900
60
11
30
10
45
55
70
5
2SK2719 π-MOS
π-MOS
π-MOS
TO-3P(N)
TO-3P(N)
2SK2967
2SK2968
2SK2733 π-MOS
1
2
2SK2744
2SK2745
TO-3P(N)
50
50
45
50
7
0.02
0.0095
1.7
P 24
P 24
P 31
P 31
P 29
P 29
2SK2985 U-MOS
2SK2986 U-MOS
TO-220NIS
L -π-MOS
2
TO-3P(N)
TO-220FL/SM
60
5.8
L -π-MOS
60
5.8
2SK2746 π-MOS
TO-3P(N)
800
900
600
500
2SK2987 U-MOS
TO-3P(N)
LSTM
2
50
0.15
1.5
2SK2749
TO-3P(N)
7
2.0
2SK2989
L -π-MOS
π-MOS
500
200
250
5
2SK2750
TO-220NIS
TO-220FL/SM
3.5
8
2.2
2SK2991 π-MOS
2SK2992 π-MOS
TO-220FL/SM
PW-Mini
π-MOS
1
3.5
2SK2776 π-MOS
0.85
π-MOS
20
0.105
2SK2993
2SK2995
2SK2996
TO-220FL/SM
TO-3P(N)IS
TO-220NIS
2SK2777 π-MOS
TO-220FL/SM
DP
600
60
6
20
27
1.25
P 29
P 24
P 24
2
L -π-MOS
250
600
30
10
0.068
1.0
P 28
P 29
2SK2782
0.055
0.085
π-MOS
π-MOS
2
2SK2789 L -π-MOS
TO-220FL/SM
100
LSTM
500
900
50
0.5
8.5
45
2
18
P 29
P 31
P 24
P 29
2SK2998 π-MOS
2SK3017 π-MOS
π-MOS
π-MOS
2SK2835
2SK2837
2SK2838
2SK2841
TPS
200
500
400
400
5
20
0.8
P 28
P 29
P 29
P 29
TO-3P(N)IS
1.25
0.03
5.0
TO-3P(N)
TO-220FL/SM
TO-220AB
0.27
1.2
2
2SK3051 L -π-MOS
TO-220FL/SM
TO-220NIS
5.5
10
π-MOS
π-MOS
π-MOS
2SK3067
600
0.55
34
Main Characteristics
Main Characteristics
Part
Number
Part
Number
Series
Package Type
Series
Package Type
VDSS
(V)
ID
(A)
R
DS(ON) max Page
(Ω)
VDSS
(V)
ID
(A)
RDS(ON) max Page
(Ω)
2SK3068 π-MOS
2SK3084 U-MOS
TO-220FL/SM
TO-220FL/SM
TO-220AB
500
100
600
30
12
30
3.5
40
45
20
70
10
45
60
60
6
0.52
0.046
2.2
P 29
P 26
P 29
P 24
P 24
P 29
P 24
P 29
P 24
P 24
2SK3440
2SK3441
2SK3442
2SK3443
2SK3444
2SK3445
2SK3453
2SK3462
2SK3466
2SK3471
U-MOS
U-MOS
TFP
TFP
TFP
TFP
TFP
TFP
60
60
50
75
45
30
25
20
0.008
0.0058
0.02
P 18
2SK3085 π-MOS
100
150
200
250
P 18
P 18
P 18
P 18
U-MOS
2
L -π-MOS
0.03
0.02
0.27
0.007
0.65
0.012
0.012
0.007
1.55
0.055
0.082
0.105
2SK3089
TO-220FL/SM
TO-220FL/SM
TO-3P(SM)
π-MOS
2
2SK3090 L -π-MOS
30
π-MOS
π-MOS
π-MOS
π-MOS
2SK3117
2SK3125
2SK3126
π-MOS
500
30
2
TO-3P(SM)
L -π-MOS
TO-3P(N)IS
PW-Mold
TFP
700
250
500
500
450
900
10
3
1.0
1.7
1.5
18
P 29
P 28
P 16
P 29
P 29
P 31
P 28
450
30
π-MOS
TO-220NIS
TO-220FL/SM
TO-3P(N)
2
2SK3127 L -π-MOS
5
π-MOS
π-MOS
π-MOS
π-MOS
2
L -π-MOS
0.5
2SK3128
2SK3129
30
PW-Mini
PW-Mold
TO-3P(N)
π-MOS
TO-3P(N)
50
2SK3472
2SK3473
2SK3497
2SK3498
2SK3499
2SK3506
1
9
4.6
1.6
TO-220NIS
600
P 30
P 30
P 29
2SK3130 π-MOS
π-MOS
TO-3P(L)
TO-3P(L)
500
500
50
50
0.11
2SK3131
10
1
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
TO-3P(N)
180
400
400
30
0.15
π-MOS
0.095
2SK3132
PW-Mold
TFP
5.5
P 29
P 18
10
45
8
0.55
0.02
0.85
2.45
2SK3176 π-MOS
2SK3205
TO-3P(N)
PW-Mold
200
150
30
5
0.052
0.5
P 28
P 28
π-MOS
TO-3P(N)
TFP
2SK3236 U-MOS
TO-220NIS
TO-220NIS
60
700
900
500
35
10
0.02
1.0
20
P 26
P 29
P 31
P 29
500
450
P 18
2SK3538
2SK3543
2SK3544
2SK3561
2SK3562
2SK3563
2SK3564
2SK3565
2SK3566
2SK3567
π-MOS
π-MOS
π-MOS
2SK3265
2SK3301
2SK3302
TO-220NIS
2
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
1
PW-Mold
TPS
450
500
600
500
TFP
13
8
0.4
P 18
P 22
P 22
P 22
18
0.5
TO-220SIS
TO-220SIS
TO-220SIS
0.85
1.25
1.5
2SK3309 MACH
2SK3310 MACH
TO-220FL/SM
TO-220NIS
450
450
10
10
0.65
0.65
P 30
P 30
6
5
π-MOS
π-MOS
TO-220FL/SM
TO-220NIS
TO-3P(N)
TO-220NIS
PW-Mold
PW-Mold
PW-Mold
TPS
600
500
6
1.25
0.62
P 30
P 30
2SK3312
2SK3313
π-MOS
π-MOS
π-MOS
π-MOS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
900
900
900
600
3
5
4.3
2.5
6.4
2.2
P 22
P 22
P 22
P 22
12
π-MOS
π-MOS
500
500
250
600
500
450
150
250
30
15
5
0.49
1.8
1.0
9.0
3.2
4.6
P 30
P 30
P 28
P 29
2SK3314
2SK3316
2SK3342
2SK3371
2.5
3.5
π-MOS
π-MOS
4.5
1
2SK3568
2SK3569
2SK3633
2SK3662
2SK3667
2SK3669
2SK3670
2SK3742
2SK3757
2SK3767
2SK3797
π-MOS
π-MOS
π-MOS
U-MOS
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
π-MOS
TO-220SIS
TO-220SIS
TO-3P(N)
TO-220NIS
TO-220SIS
PW-Mold
500
600
800
60
12
10
7
0.52
0.75
1.3
P 22
P 22
P 31
2
2SK3373 π-MOS
2SK3374 π-MOS
1
35
7.5
10
0.67
5
0.0095 P 26
2
TFP
2SK3387 L -π-MOS
18
20
75
70
12
10
13
600
100
150
900
450
600
600
1.0
P 22
P 27
0.012
0.105
0.005
0.006
0.52
P 18
P 18
P 18
P 18
P 18
P 30
P 30
TFP
2SK3388
2SK3389
π-MOS
0.125
1.7
TFP
U-MOS
LSTM
TFP
2SK3397 U-MOS
2SK3398 π-MOS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
2.5
P 22
P 22
P 22
P 22
P 22
P 22
30
TFP
2
2.45
4.5
500
600
450
450
TO-220FL/SM
TO-220FL/SM
TO-220NIS
2SK3399
2SK3403
2SK3407
2SK3417
MACH
MACH
π-MOS
π-MOS
2
0.75
13
0.49
3.5
0.4
10
5
0.65
1.8
2SK3798
2SK3799
2SK3842
π-MOS
π-MOS
U-MOS
TO-220SIS
TO-220SIS
TFP
900
900
60
3.5
9
TO-220FL/SM 500
TO-220FL/SM 600
P 30
P 30
P 18
P 18
1.5
10
10
75
1.0
2SK3437 MACH
2SK3438 π-MOS
2SK3439 U-MOS
75
0.0058 P 18
TFP
TFP
600
30
1.0
TPC6001
TPC6002
VS-6
VS-6
20
30
0.03
P 17
U-MOS
U-MOS
6
6
0.03
P 17
0.005
35
Power MOSFET Product List
Main Characteristics
Part
Main Characteristics
VDSS ID
(V) (A)
Part
Number
Series
U-MOS
Package Type
Series
U-MOS
Package Type
VDSS
(V)
ID
(A)
R
DS(ON) max Page
(Ω)
RDS(ON) max Page
Number
(Ω)
30
20
TPC8402
SOP-8
– 30/30 – 4.5/5 35/50
– 30/30 – 4.5/6 55/33
P 14
P 14
TPC6003
TPC6004
TPC6005
TPC6101
TPC6102
TPC6103
TPC6104
TPC6105
TPC6201
TPC8001
VS-6
VS-6
VS-6
VS-6
VS-6
VS-6
VS-6
VS-6
VS-6
SOP-8
6
0.024
P 17
P 17
P 17
P 17
P 17
P 17
P 17
P 17
P 17
P 14
P 14
P 14
P 14
P 14
P 14
P 14
P 14
P 14
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
π-MOS
U-MOS
π-MOS
6
6
TPC8403
U-MOS
U-MOS
SOP-8
0.024
0.028
0.06
30
– 20
– 30
– 12
– 20
– 20
30
TPC8A01
TPCA8003-H
TPCA8004-H
TPCA8005-H
TPCA8101
30/30
30
6/8.5 0.025/0.018
35 0.0066
40 0.0046
27 0.009
SOP-8
P 12
P 13
P 13
P 13
P 13
P 13
P 13
P 15
P 15
P 15
P 15
P 15
P 15
P 15
P 15
P 15
P 15
P 15
P 15
Ultra high-speed
U-MOS
Ultra high-speed
U-MOS
Ultra high-speed
U-MOS
– 4.5
– 4.5
– 4.5
– 4.5
– 2.7
2.5
7
SOP Advance
SOP Advance
SOP Advance
SOP Advance
SOP Advance
SOP Advance
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
TSSOP-8
VS-8
0.06
30
0.035
0.04
30
U-MOS
– 30
– 30
– 30
200
250
200
250
– 30
– 20
– 40 0.007
– 40 0.006
– 40 0.0042
1.3 0.8
TPCA8102 U-MOS
TPCA8103 U-MOS
TPCS8004 π-MOS
0.11
0.095
0.02
30
13
π-MOS
π-MOS
π-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
TPC8003
30
30
0.007
0.05
TPCS8006
TPCS8007
TPCS8008
TPCS8101
TPCS8102
TPCS8104
TPCS8105
TPCS8204
TPCS8205
TPCS8208
TPCS8209
TPCS8210
TPCS8211
TPCS8212
TPCS8302
TPCS8303
TPCF8001
1.1 1
SOP-8
SOP-8
SOP-8
SOP-8
5
1.9 0.5
TPC8004
High-speed
U-MOS
High-speed
U-MOS
1.8 0.55
30
7
0.027
0.016
0.4
TPC8006-H
TPC8010-H
TPC8012-H
TPC8014
30
11
– 6 0.025
– 6 0.02
π-MOS
1.8
11
200
30
SOP-8
SOP-8
SOP-8
SOP-8
SOP-8
SOP-8
SOP-8
SOP-8
SOP-8
SOP-8
U-MOS
– 30
– 30
20
– 11 0.012
– 11 0.0135
0.014
0.008
0.0057
0.0066
0.0046
0.009
0.0065
0.04
High-speed
U-MOS
High-speed
U-MOS
Ultra high-speed
U-MOS
Ultra high-speed
U-MOS
Ultra high-speed
U-MOS
High-speed
U-MOS
High-speed
U-MOS
13
30
TPC8015-H
TPC8016-H
TPC8017-H
TPC8018-H
TPC8020-H
TPC8104-H
TPC8105-H
TPC8107
6
5
0.017
0.045
0.017
0.03
15
30
20
30
15
P 14
P 14
P 14
P 14
P 14
P 14
20
6
30
18
20
5
30
13
20
5
0.03
P 15
P 15
P 15
P 15
P 15
P 17
– 30
– 30
– 30
– 5
– 7
– 13
20
6
0.024
0.024
0.0035
20
U-MOS
U-MOS
0.0007
6
– 20
– 5
– 11
– 10
– 8
0.0013
0.02
SOP-8
SOP-8
SOP-8
– 30
– 30
– 40
P 14
P 14
P 14
TPC8108
TPC8109
TPC8110
– 20
– 5 0.021
0.0025
U-MOS
U-MOS
0.025
30
7
TPC8111
TPC8112
TPC8113
TPC8114
TPC8115
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
SOP-8
SOP-8
SOP-8
SOP-8
SOP-8
SOP-8
SOP-8
SOP-8
– 30
– 30
– 30
– 30
– 20
30
– 11
– 13
– 11
– 18
– 10
6
0.012
0.006
0.01
P 14
P 14
P 14
P 14
P 14
P 14
P 14
P 14
TPCF8101
TPCF8102
TPCF8103
TPCF8104
TPCF8201
TPCF8301
TPCF8302
TPCF8303
– 12
– 20
– 20
– 30
20
– 6 0.028
– 6 0.03
P 17
P 17
P 17
P 17
P 17
P 17
P 17
P 17
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
VS-8
VS-8
VS-8
VS-8
VS-8
VS-8
VS-8
VS-8
– 2.7 0.11
– 6 0.0028
0.0045
0.01
3
0.049
– 20
– 20
– 20
– 2.7 0.11
– 3 0.0059
– 3 0.0059
TPC8203
TPC8206
TPC8207
TPC8208
TPC8209
TPC8210
0.021
0.05
60
7
20
6
0.02
U-MOS
U-MOS
SOP-8
SOP-8
20
30
5
5
0.05
0.04
P 14
P 14
TPCF8402
TPCF8A01
– 30/30
– 3.2/4 0.11/0.049 P 17
U-MOS
U-MOS
VS-8
VS-8
20
3
0.049
P 17
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
SOP-8
SOP-8
SOP-8
SOP-8
SOP-8
30
30
8
5.5
0.015
0.036
0.035
0.03
P 14
P 14
P 14
P 14
P 14
TPCF8B01
TPCP8201
TPCP8401
TPCP8402
TPCP8J01
U-MOS
U-MOS
U-MOS
U-MOS
U-MOS
VS-8
PS-8
PS-8
PS-8
PS-8
– 20
– 2.7 0.11
P 17
P 17
30
4.2 0.05
TPC8211
TPC8303
– 30
– 20
– 4.5
– 5
– 30/30 – 3.4/4.2 0.048/0.072 P 17
– 12/20 – 5.5/0.1 0.038/3 P 17
TPC8305
TPC8401
– 30/30 – 4.5/6 35/21
– 32/50
– 6/0.1 0.035
P 17
36
Power MOSFET Superseded Products
The product number in the left-hand column below are soon to be superseded. When ordering, please
choose from among the recommended products in the right-hand column.
Superseded Products
Superseded Products
Electrical Characteristics
Electrical Characteristics
Part Number
Part Number
Package Type
Package Type
VDSS
(V)
ID
(A)
RDS(ON)
max(Ω)
VDSS
(V)
ID
(A)
RDS(ON)
max(Ω)
2SK2057
2SK2235
2SK2741
2SK2742
2SK2836
2SK2839
2SK2985
2SK2986
2SK2987
TPC8005-H
TPC8102
TPC8201
TPC8204
TPCS8201
TPCS8206
TPC8202
TPC8106-H
TPC8007-H
TPCS8203
TPC8103
TPC8002
500
250
60
20
2
0.34
2
TO-3P(N)
PW-Mold
SP
2SK2837
2SK3462
2SK2231
2SK2201
2SK3371
TPCF8001
500
250
60
20
3
0.27
TO-3P(N)
PW-Mold
PW-Mold
PW-Mold
PW-Mold
VS-8
1.7
5
0.16
0.35
9
5
0.16
100
600
30
3
SP
100
600
30
3
0.35
1
SP
1
9
10
45
55
70
11
– 6
5
0.04
0.0058
0.0058
0.0058
0.016
0.04
0.05
0.02
0.03
0.03
0.05
0.02
0.017
0.045
0.013
0.014
0.024
SP
7
0.023
0.0058
0.0058
0.0058
0.016
0.04
60
TO-220NIS
TO-220FL/SM
TO-3P(N)
SOP-8
2SK3844
2SK3844
2SK3845
ꢀ
60
45
45
70
11
– 7
5
TO-220NIS
TO-220NIS
TO-3P(N)
SOP-8
60
ꢀ
ꢀ
60
60
60
30
TPC8010-H
TPC8105-H
TPC8209
30
– 30
30
SOP-8
– 30
30
SOP-8
SOP-8
0.05
SOP-8
20
6
SOP-8
TPC8207
20
6
0.02
SOP-8
20
5
TSSOP-8
TSSOP-8
SOP-8
TPCS8209
TPCS8210
TPC8208
20
5
0.03
TSSOP-8
TSSOP-8
SOP-8
20
5
20
5
0.03
20
5
20
5
0.05
– 30
30
-8
13
6
SOP-8
TPC8109
– 30
30
– 10
13
6
0.02
SOP-8
SOP-8
TPC8009-H
TPCS8211
TPC8108
0.01
SOP-8
20
TSSOP-8
SOP-8
20
0.024
0.013
0.014
0.024
TSSOP-8
SOP-8
– 30
30
– 11
11
5
– 30
30
– 11
11
6
SOP-8
TPC8014
SOP-8
TPC8207
20
TSSOP-8
TPCS8212
20
TSSOP-8
ꢀ: Under development
37
Power MOSFET Final-Phase and Discontinued Products
(1) Final-Phase Products
Recommended
Replacement Products
Recommended
Replacement Products
Part Number
Part Number
2SJ147
2SJ304
TPC8005-H
TPC8007-H
TPC8102
TPC8010-H
TPC8009-H
TPC8105-H
TPC8111/TPC8108
TPC8109
2SJ1347
2SK794
2SK2314
2SK2610
2SK2391
2SK2601
2SK2698
2SK2266
2SK2952
2SK2698
2SK2776
2SK2232
2SK2777
2SK2385
2SK2233
2SK2542
2SK1349
2SK1488
2SK1652
2SK1720
2SK1854
2SK1856
2SK1864
2SK1882
2SK1915
2SK1997
2SK1998
2SK2387
TPC8103
TPC8106-H
TPC8201
TPC8209
TPC8202
TPC8208
TPC8204
TPC8207
TPCS8201
TPCS8203
TPCS8206
TPCS8207
TPCS8209
TPCS8211
TPCS8210
TPCS8212
38
( )
2 Discontinued Products
Recommended
Replacement Products
Recommended
Replacement Products
Recommended
Replacement Products
Part Number
Part Number
Part Number
2SJ91
2SJ200
2SK788
2SK789
2SK790
2SK791
2SK792
2SK793
2SK849
2SK850
2SK851
2SK856
2SK857
2SK858
2SK888
2SK889
2SK890
2SK891
2SK892
2SK893
2SK894
2SK895
2SK896
2SK942
2SK943
2SK944
2SK945
2SK1029
2SK1078
2SK1112
2SK1113
2SK1114
2SK1115
2SK1116
2SK1117
2SK1118
2SK1124
2SK1213
2SK1251
2SK1252
2SK1333
2SK1344
2SK1346
2SK1348
2SK1350
2SK1351
2SK1352
2SK1356
2SK1357
2SK1358
2SK1362
2SK1363
2SK1377
2SK1378
2SK1379
2SK1380
2SK1487
2SK1513
2SK1531
2SK2698
2SK2698
2SK2698
2SK2608
2SK2608
2SK2610
2SK2233
2SK2466
2SK2967
2SK2385
2SK2233
2SK2750
2SK2350
2SK2314
2SK2350
2SK2382
2SK2662
2SK2386
2SK2542
2SK2601
2SK2695
2SK2232
2SK2232
2SK2967
2SK2599
2SK2698
2SK2615
2SK2231
2SK2201
2SK2232
2SK2232
2SK2232
2SK2544
2SK2545
2SK2233
2SK2602
2SK2231
2SK2201
2SK2698
2SK2232
2SK2232
2SK2391
2SK2382
2SK2662
2SK2543
2SK2700
2SK2610
2SK2611
2SK2610
2SK2847
2SK2679
2SK2841
2SK2173
2SK2267
2SK2601
2SK2601
2SK2698
2SK1542
2SK1574
2SK1600
2SK1601
2SK1602
2SK1603
2SK1641
2SK1642
2SK1643
2SK1649
2SK1650
2SK1651
2SK1653
2SK1692
2SK1717
2SK1719
2SK1721
2SK1722
2SK1723
2SK1745
2SK1746
2SK1766
2SK1767
2SK1768
2SK1769
2SK1792
2SK1805
2SK1855
2SK1858
2SK1865
2SK1879
2SK1913
2SK1927
2SK1928
2SK1929
2SK2030
2SK2038
2SK2039
2SK2056
2SK2077
2SK2078
2SK2088
2SK2089
2SK2107
2SK2149
2SK2150
2SK2222
2SK2236
2SK2237
2SK2319
2SK2320
2SK2351
2SK2352
2SK2386
2SK2388
2SK2402
2SK2376
2SK2542
2SK2603
2SK2608
2SK2603
2SK2718
2SK2993
2SK2952
2SK2717
2SK2610
2SK2719
2SK2601
2SK2312
2SK2749
2SK2615
2SK2231
2SK2991
2SK2991
2SK2699
2SK2837
2SK2865
2SK2417
2SK2750
2SK2614
2SK2599
2SK2376
2SK2543
2SK2698
2SK2883
2SK2776
2SK2398
2SK2750
2SK2789
2SK2789
2SK2884
2SK2231
2SK2604
2SK2610
2SK2605
2SK2746
2SK2607
2SK2401
2SK2884
2SK2401
2SK2601
2SK2698
2SK2604
2SK2662
2SK2543
2SK2746
2SK2607
2SK2544
2SK2545
2SK2661
2SK2750
2SK2750
2SJ92
2SJ200
2SJ123
2SJ124
2SJ126
2SJ183
2SJ224
2SJ238
2SJ239
2SJ240
2SJ241
2SJ315
2SK271
2SK272
2SK324
2SK325
2SK355
2SK356
2SK357
2SK358
2SK385
2SK386
2SK387
2SK388
2SK405
2SK417
2SK418
2SK419
2SK420
2SK421
2SK422
2SK442
2SK447
2SK525
2SK526
2SK527
2SK528
2SK529
2SK530
2SK531
2SK532
2SK537
2SK538
2SK539
2SK568
2SK572
2SK573
2SK578
2SK643
2SK644
2SK672
2SK673
2SK674
2SK678
2SK693
2SK694
2SK708
2SJ304
2SJ304
2SJ304
2SJ377
2SJ312
2SJ360
2SJ377
2SJ349
2SJ401
2SJ377
2SK1529
2SK1529
2SK2698
2SK2698
2SK387
2SK388
2SK2381
2SK2417
2SK2698
2SK2698
2SK2882
2SK2508
2SK1529
2SK2232
2SK2662
2SK2662
2SK2662
2SK2662
2SK2961
2SK2232
2SK2508
2SK2382
2SK2417
2SK2232
2SK2662
2SK2662
2SK2662
2SK2662
2SK2232
2SK2733
2SK2719
2SK2610
–
–
2SK1641
2SK2882
2SK2601
2SK2601
2SK2232
2SK2232
2SK2232
2SK2698
2SK2698
2SK2698
2SK2698
39
Package List
1. Compact Surface-Mount Packages
To meet requirements for compact and
thin equipment, Toshiba offers various
packages with power dissipation of 1.0 to
150 W and drain current of 1 to 50 A.
In addition, we offer devices housed in
the SOP-8 and TSSOP-8 packages. These
devices consist of input/output isolated
TFP Series MOSFETs and trench
100
NEW
SOP
Advance
TO-3P
(SM)
TFP
NEW
VS -8
P S -8
TO-220
(SM)
10
SOP-8
PW-MINI
PW-MOLD
DP
NEW
SP
VS-6
1.0
0.1
MOSFETs with ultra-low ON-resistance.
0.1
1.0
10
100
1000
Power Dissipation
P (W)
D
ꢀꢀVS-6
Unit: mm
Tape dimensions
4.0 ± 0.1
+0.1
ø1.5
0.0
-
0.3 ± 0.05
A
6
4
B
B'
2.0 ± 0.08
A'
4.0 ± 0.1
1.4 ± 0.1
1.55 ± 0.1
B
B'
3.05
± 0.1
11.4
9.0
1
3
0.3 ± 0.1
0.95
5.0
Reel dimensions
2.9 ± 0.2
+0.25
0.25
0.05
-
0.15
Packing quantity
Tape dimensions
3000pcs / reel
ꢀꢀVS-8
Unit: mm
2.9 ± 0.1
4.0
2.0
±
0.1
+0.1
0.3+0.1/ -0.05
0.025
ø1.5
0.0
-
A
±
0.1
M
A
A
0.2
± 0.05
5
8
B
B
A
0.95
± 0.1
4.0
± 0.1
A
ø1.1
± 0.1
1
4
B
B
3.1
± 0.1
0.65
11.4
9.0
5.0
Reel dimensions
0.05 S
S
A
Packing quantity
0.475
4000pcs / reel
40
ꢀꢀPS-8
Unit: mm
Tape dimensions
+0.1
0.2 ± 0.05
ø1.50
4.0 ± 0.1
0.0
-
0.33
±
0.05
M
0.05
A
2.0 ± 0.05
0.95 ± 0.05
8
5
4.0 ± 0.1
1.15 ± 0.05
3.1 ± 0.1
1
4
0.33
± 0.05
B
0.17 ± 0.02
0.475
M
0.05
B
11.4
9.0
0.65
2.9
Reel dimensions
5.0
±
0.1
A
S
0.025 S
Packing quantity
3000pcs / reel
ꢀꢀTSSOP-8
Unit: mm
Tape dimensions
±
0.3 0.05
±
±
4.0 0.1 2.0 0.05
ø1.55 ± 0.05
8
5
±
8.0 0.1
± 0.05
±
1.55
1.1 0.1
6.9 0.2
±
±
1
4
(0.525)
0.25 0.05
0.65
3.5 ± 0.2
6.6
±
0.1
3.3 max
18.5 (max)
Reel dimensions
±
3.0 0.1
120
±
3
13.5 ± 0.5
±
R
135
0.6 0.2
.5
0
R
10
±
0.05
.0
4
.5
ø13 ± 0.2
0
±
.0
2
Packing quantity
3000pcs / reel
41
Package List
ꢀꢀSOP-8
Unit: mm
Tape dimensions
4.0 ± 0.1
8
5
0.3 ± 0.05
ø1.55 ± 0.05
2.0 2.0
6.5 ± 0.1
1
4
6.8
0.595
0.4 ± 0.1
8.0 ± 0.1
2.55 ± 0.1
0.25 M
1.27
18.5 (max)
13.5 0.5
Reel dimensions
5.5 max
120
±
3
±
5.0 ± 0.2
R
135
5
.
R
10
0
±
.0
4
.5
ø13 ± 0.2
0
±
.0
2
0.5 ± 0.2
0.1
Packing quantity
Tape dimensions
3000pcs / reel
ꢀꢀSOP Advance
Unit: mm
4.0
± 0.1
0.3
± 0.05
ø1.55
± 0.05
2.0 2.0
6.6
0.1
6.4
±
0.4
±
0.1
5
1.27
M
0.05
0.15
A
8
1
4
1.2
± 0.1
±
0.05
ø1.7
± 0.1
8.0
± 0.1
4.25
± 0.2
1
4
0.595
8
5
0.8
± 0.1
18.5 (max)
13.5 0.5
Reel dimensions
120º
135
± 3
A
±
5.0
±
0.2
S
R
.5
0
R
10
±
.0
4
S
0.05
.5
0
ø13
± 0.2
±
.0
2
Packing quantity
3000pcs / reel
42
ꢀꢀPW-Mini
Unit: mm
Tape dimensions
0.3 ± 0.05
+0.1
-0
4.0 ± 0.1
2.0 2.0
ø1.5
1.6 max
0.4 ± 0.05
4.6 max
1.7 max
5.1 ± 0.2
2.3
4.9 ± 0.2
0.9
1.65 ± 0.1
1.8 ± 0.1
8.0 ± 0.1
+ 0.08
-0.05
0.45
0.4
+ 0.08
0.05
+ 0.08
0.4 0.05
A
Reel dimensions
-
-
1.5 ± 0.1
1.5 ± 0.1
75
41.5
41.5
+0.2
-0.0
98
0.9
1.1 ± 0.2
1
2
3
9.5
A'
1. Gate
2. Drain (heat sink)
3. Source
Packing quantity
Tape dimensions
1000pcs / reel
ꢀꢀDP
Unit: mm
6.8 max
ø3.0 ± 0.05
+0.1
-0
4.0 ± 0.1
2.0 ± 0.1
ø1.5
5.2 ± 0.2
0.6 max
0.3 ± 0.05
0.6 ± 0.15
6.8 ± 0.1
8.0 ± 0.1
0.95 max
2.7 ± 0.1
0.6 max
0.6 ± 0.15
2.3 2.3
2
17.5
± 1.5
Reel dimensions
40
120 ± 3
R
5
1
3
2 ± 0.5
R
± 2
120
2 ± 0.5
3 00±.50.5
10
± 1
2
±
0.5
2 ± 0.5
1. Gate
2. Drain (heat sink)
3. Source
Packing quantity
2000pcs / reel
43
Package List
ꢀꢀNew PW-Mold
Unit: mm
Tape dimensions
6.5 ± 0.2
5.2 ± 0.2
ø3.0 ± 0.05
+0.1
-0
4.0 ± 0.1
2.0 ± 0.1
ø1.5
0.6 max
0.3 ± 0.05
6.8 ± 0.1
8.0 ± 0.1
1.1 ± 0.2
2.7 ± 0.1
Reel dimensions
17.5
± 1.5
40
0.6 max
120 ± 3
2.3 ± 0.15 2.3 ± 0.15
R
5
2 ± 0.5
R
± 2
120
1
2
3
2 ± 0.5
3
± 0.5
10
± 1
0.8 max
0.6 ± 0.15
1.05 max
2
±
0.5
2 ± 0.5
1. Gate
Packing quantity
Tape dimensions
2. Drain (heat sink)
3. Source
2000pcs / reel
ꢀꢀTO-220SM
Unit: mm
+0.1
-0
0.4 ± 0.05
4.0 ± 0.1
2.0 ± 0.1
ø1.5
ø2.0 ± 0.1
10.3 max
1.32
0.1
10.8
0.1
±
0.1
5.2
± 0.1
12.0
±
0.76
Reel dimensions
120 ± 3
2.54 ± 0.25
2.54 ± 0.25
25.4 ± 2
R
135
.5
R
6.5
0
60
1
2
3
±
±
.0
4.0
0.5
.5
0
±
ø13
±
0.5
.0
2
2 ± 0.5
1. Gate
2. Drain (heat sink)
3. Source
Packing quantity
1000pcs / reel
44
ꢀꢀTFP
Unit: mm
Tape dimensions
9.2 max
4.0 ± 0.1
12.0 ± 0.1
2.0 ± 0.1 ø1.5 ± 0.1
0.30 ± 0.05
0.4 ± 0.1
7.0 ± 0.2
1
9.5 ± 0.1
3.0 ± 0.1
ø2.0 ± 0.1
Reel dimensions
120 ± 3
25.5 ± 2
0.2 1.5 2.0 2.5
R
135
.5
R
10
00.5
±±
60
2
3
4
.0
4.0
ø13
±
0.5
1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.2
2 ± 0.5
1. Drain (heat sink)
2. Gate
3. Source1
4. Source2
Packing quantity
1500pcs / reel
45
Package List
2. Through-Hole Package
ꢀꢀLSTM
ꢀꢀPW-Mold (Straight)
Unit: mm
5.1 max
6.8 max
5.2 ± 0.2
0.6 max
0.75 max
1.0 max
0.8 max
0.6 max
0.95 max
0.6 max
0.6 ± 0.15
1.27
1.27
2.3 2.3
1
2
3
2.54
1
2
3
1. Source
2. Drain
3. Gate
1. Gate
2. Drain (Heat Sink)
3. Source
ꢀꢀDP (Straight)
ꢀꢀTPS
6.8 max
8.0 ± 0.2
0.6 max
5.2 ± 0.2
0.5
1.4 ± 0.1
1.05 ± 0.1
0.95 max
0.5 + 0.15
0.6 max
0.6 ± 0.15
-
0.05
0.5 + 0.15
-0.05
2.3
2.3
2.5 ± 0.5
2.5 ± 0.5
1
2
3
1
2
3
1. Gate
1. Source
2. Drain
3. Gate
2. Drain (Heat Sink)
3. Source
ꢀꢀTO-220AB
ø3.6 ± 0.2
10.3 max
1.6 max
0.76
2.54 ± 0.25
1
2
3
1. Gate
2. Drain (Heat Sink)
3. Source
46
ꢀꢀTO-220NIS
ꢀꢀTO-220FL
ꢀꢀTO-3P(N)IS
ꢀꢀTO-220SIS
ꢀꢀTO-3P(N)
ꢀꢀTO-3P(L)
Unit: mm
ø 3.2 ± 0.2
ø 3.2 ± 0.2
10 ± 0.3
2.7 ± 0.2
10 ± 0.3
2.7 ± 0.2
1.14 ± 0.15
1.1
1.1
0.75 ± 0.15
2.54 ± 0.25
0.69 ± 0.15
A
2.54
2.54
2.54 ± 0.25
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
1. Gate
2. Drain
3. Source
10.3 max
1.32
15.9 max
ø 3.2 ± 0.2
1.6 max
2.0 ± 0.3
0.76
+ 0.3
-0.25
1.0
5.45 ± 0.2
5.45 ± 0.2
2.54 ± 0.25
2.54 ± 0.25
1
2
3
1
2
3
1. Gate
1. Gate
2. Drain (Heat Sink)
3. Source
2. Drain (Heat Sink)
3. Source
ø 3.3 ± 0.2
20.5 max
3.5
15.8 ± 0.5
ø 3.6 ± 0.2
2.5
3.0
2.0
1.0 + 0.25
+ 0.3
-0.25
-
0.15
1.0
5.45 ± 0.15
5.45 ± 0.15
5.45 ± 0.2
5.45 ± 0.2
3.15 + 0.2
0.1
-
1
2
3
1
2
3
1. Gate
1. Gate
2. Drain
3. Source
2. Drain (Heat Sink)
3. Source
47
OVERSEAS SUBSIDIARIES AND AFFILIATES
(As of March 10, 2004)
2004-3
Toshiba America
Toshiba Electronics Europe GmbH
Toshiba Electronics Asia, Ltd.
Electronic Components, Inc.
Düsseldorf Head Office
Hansaallee 181, D-40549 Düsseldorf,
Germany
Hong Kong Head Office
BCE0017B
Headquarters-Irvine, CA
Level 11, Tower 2, Grand Century
Place, No.193, Prince Edward Road West,
Mongkok, Kowloon, Hong Kong
Tel: 2375-6111 Fax: 2375-0969
9775 Toledo Way, Irvine, CA 92618, U.S.A.
Tel: (949)455-2000 Fax: (949)859-3963
Tel: (0211)5296-0 Fax: (0211)5296-400
Boulder, CO (Denver)
3100 Araphahoe #500,
Boulder, CO 80303, U.S.A.
Tel: (303)442-3801 Fax: (303)442-7216
München Office
Büro München Hofmannstrasse 52,
D-81379, München, Germany
Tel: (089)748595-0 Fax: (089)748595-42
Beijing Office
Room 714, Beijing Fortune Building,
No.5 Dong San Huan Bei-Lu, Chao Yang District,
Beijing, 100004, China
Deerfield, IL (Chicago)
One Pkwy., North, #500, Deerfield,
IL 60015-2547, U.S.A.
France Branch
Les Jardins du Golf 6 rue de Rome 93561,
Rosny-Sous-Bois, Cedex, France
Tel: (1)48-12-48-12 Fax: (1)48-94-51-15
Tel: (010)6590-8796 Fax: (010)6590-8791
Chengdu Office
Suite 403A, Holiday Inn Crown Plaza 31, Zongfu Street,
Chengdu, 610016, Sichuan, China
Tel: (028)675-1773 Fax: (028)675-1065
Tel: (847)945-1500 Fax: (847)945-1044
Duluth, GA (Atlanta)
3700 Crestwood Pkwy, #160,
Duluth, GA 30096, U.S.A.
Italy Branch
Centro Direzionale Colleoni,
Palazzo Perseo 3,
I-20041 Agrate Brianza, (Milan), Italy
Tel: (039)68701 Fax: (039)6870205
Qingdao Office
Tel: (770)931-3363 Fax: (770)931-7602
Room B707, Full Hope Plaza,
12 Hong Kong Central Road, Qingdao,
Shandong, 266071, China
Beaverton/Portland, OR
8323 SW Cirrus Drive, Beaverton,
OR 97008, U.S.A.
Spain Branch
Tel: (0532)502-8105 Fax: (0532)502-8109
Parque Empresarial, San Fernando, Edificio Europa,
a
Tel: (503)466-3721 Fax: (503)629-0827
1
Planta, E-28831 Madrid, Spain
Toshiba Electronics Shenzhen Co., Ltd.
Room 2601-2609, 2616, Office Tower Shun Hing Square,
Di Wang Commercial Center, 5002 Shennan Road East,
Shenzhen, 518008, China
Tel: (91)660-6798 Fax:(91)660-6799
Raleigh, NC
3120 Highwoods Blvd., #108, Raleigh,
NC 27604, U.S.A.
U.K. Branch
Riverside Way, Camberley Surrey,
GU15 3YA, U.K.
Tel: (0755)2583-0827 Fax: (0755)8246-1581
Tel: (919)859-2800 Fax: (919)859-2898
Tel: (01276)69-4600 Fax: (01276)69-4800
Toshiba Electronics Korea Corporation
Richardson,TX (Dallas)
777 East Campbell Rd., #650, Richardson,
TX 75081, U.S.A.
Sweden Branch
Gustavslundsvägen 18, 5th Floor,
S-167 15 Bromma, Sweden
Tel: (08)704-0900 Fax: (08)80-8459
Seoul Head Office
891, Sejong Securities Bldg. 20F, Daechi-dong,
Gangnam-gu, Seoul, 135-738, Korea
Tel: (02)3484-4334 Fax: (02)3484-4302
Tel: (972)480-0470 Fax: (972)235-4114
San Jose Engineering Center, CA
1060 Rincon Circle, San Jose, CA 95131, U.S.A.
Tel: (408)526-2400 Fax:(408)526-8910
Toshiba Electronics Asia
(Singapore) Pte. Ltd.
Gumi Office
6F, Goodmorning Securities Building,
56 Songjung-dong, Gumi-shi,
Kyeongbuk, 730-090, Korea
Tel: (054)456-7613 Fax: (054)456-7617
Wakefield, MA (Boston)
Singapore Head Office
438B Alexandra Road, #06-08/12 Alexandra
Technopark, Singapore 119968
Tel: (6278)5252 Fax: (6271)5155
401 Edgewater Place, #360, Wakefield,
MA 01880-6229, U.S.A.
Tel: (781)224-0074 Fax: (781)224-1095
Toshiba Electronics (Shanghai) Co., Ltd.
11F, HSBC Tower, 101
Toshiba do Brasil, S.A.
Toshiba Electronics Service
(Thailand) Co., Ltd.
Yin Cheng East Road, Pudong New Area, Shanghai,
200120, China
Electronics Component Div.
Rua Afonso Celso,55213 ardar,
Vila Mariana CEP 04119-002, Sa˜o Paulo, Brasil
Tel: (011)5576-6619 Fax: (011)5576-6607
135 Moo 5, Bangkadi Industrial Park, Tivanon Road,
Pathumthani, 12000, Thailand
Tel: (021)6841-0666 Fax: (021)6841-5002
Tel: (02)501-1635 Fax: (02)501-1638
Hangzhou Office
9F Zhejiang San Rui Bldg. No. 36 QingChun Road,
Hangzhou 310004, China
Toshiba Electronics Trading
(Malaysia)Sdn. Bhd.
Toshiba India Private Ltd.
6F DR. Gopal Das Bhawan 28,
Tel: (0571)8704-0255 Fax: (0571)8704-0200
Barakhamba Road, New Delhi, 110001, India
Tel: (011)2371-4601 Fax: (011)2371-4603
Kuala Lumpur Head Office
Tsurong Xiamen Xiangyu Trading Co., Ltd.
14G, International Bank BLDG., No.8 Lujiang Road,
Xiamen, 361001, China
Suite W1203, Wisma Consplant, No.2,
Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya,
Selangor Darul Ehsan, Malaysia
Tel: (0592)226-1398 Fax: (0592)226-1399
Tel: (03)5631-6311 Fax: (03)5631-6307
Toshiba Electronics Taiwan Corporation
Penang Office
Suite 13-1, 13th Floor, Menara Penang Garden,
42-A, Jalan Sultan Ahmad Shah,
10050 Penang, Malaysia
Taipei Head Office
17F, Union Enterprise Plaza Building, 109
Min Sheng East Road, Section 3, Taipei,
105, Taiwan
Tel: (04)226-8523 Fax: (04)226-8515
Tel: (02)2514-9988 Fax: (02)2514-7892
Toshiba Electronics Philippines, Inc.
26th Floor, Citibank Tower, Valero Street, Makati,
Manila, Philippines
Kaohsiung Office
16F-A, Chung-Cheng Building, 2, Chung-Cheng 3Road,
Kaohsiung, 800, Taiwan
Tel: (02)750-5510 Fax: (02)750-5511
Tel: (07)237-0826 Fax: (07)236-0046
The information contained herein is subject to change without notice. 021023_D
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
021023_C
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a
safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products
specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc. 021023_A
The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment,
industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality
and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety
devices, etc. Unintended Usage of Toshiba products listed in this document shall be made at the customer’s own risk. 021023_B
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030519_Q
2004
Previous edition: BCE0017A
2004-03(0.5k)PC-O
Printed in Japan
Semiconductor Company
Website: http://www.semicon.toshiba.co.jp/eng
100% recycled paper
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