2SK1061_07 [TOSHIBA]
Silicon N Channel MOS Type High Speed Switching Applications; 硅N沟道MOS型高速开关应用
| 型号： | 2SK1061_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel MOS Type High Speed Switching Applications |
| 文件： | 总5页 (文件大小：534K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1061
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications
Unit: mm
Analog Switch Applications
Interface Applications
•
•
•
•
•
Excellent switching times: t = 14 ns (typ.)
on
High forward transfer admittance: |Y | = 100 mS (min)
fs
Low on resistance: R
Enhancement-mode
= 0.6 Ω (typ.)
DS (ON)
Complementary to 2SJ167
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
60
±20
V
V
DS
Gate-source voltage
V
GSS
DC
I
200
D
Drain current
mA
Pulse
I
800
DP
JEDEC
JEITA
―
―
Drain power dissipation (Ta = 25°C)
Channel temperature
P
300
mW
°C
D
ch
stg
T
150
TOSHIBA
2-4E1E
Storage temperature range
T
−55~150
°C
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2SK1061
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±10 V, V
= 0
⎯
⎯
60
2
⎯
⎯
±100
10
nA
μA
V
GSS
GS
DS
DS
Drain cut-off current
I
= 60 V, V
= 0
DSS
(BR) DSS
GS
= 0
Drain-source breakdown voltage
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Drain-source ON voltage
Input capacitance
V
I
= 1 mA, V
⎯
⎯
D
GS
V
V
V
= 10 V, I = 1 mA
⎯
3.5
⎯
V
th
DS
DS
D
⎪Y ⎪
fs
= 10 V, I = 50 mA
100
⎯
⎯
⎯
⎯
⎯
⎯
mS
Ω
D
R
I
I
= 50 mA, V
= 10 V
= 10 V
0.6
30
55
13
40
1.0
50
DS (ON)
DS (ON)
D
D
GS
GS
V
= 50 mA, V
mV
pF
pF
pF
C
C
65
iss
V
= 10 V, V
= 0, f = 1 MHz
GS
Reverse transfer capacitance
Output capacitance
18
DS
rss
C
50
oss
Rise time
t
⎯
⎯
⎯
⎯
8
⎯
⎯
⎯
⎯
r
Turn-on time
Switching time
t
14
35
75
on
ns
Fall time
t
f
<
D.U. 1%
V
: t , t < 5 ns
r f
IN
Turn-off Time
t
off
(Z
out
= 50 Ω)
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
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2SK1061
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2SK1061
4
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2SK1061
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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