2SJ439_07 [TOSHIBA]

DC/DC Converter, Relay Drive and Motor Drive Applications; DC / DC转换器,继电器驱动器和电机驱动应用
2SJ439_07
型号: 2SJ439_07
厂家: TOSHIBA    TOSHIBA
描述:

DC/DC Converter, Relay Drive and Motor Drive Applications
DC / DC转换器,继电器驱动器和电机驱动应用

驱动器 转换器 继电器 电机
文件: 总6页 (文件大小:730K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SJ439  
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOSV)  
2SJ439  
DC/DC Converter, Relay Drive and Motor Drive  
Applications  
Unit: mm  
z 2.5-V gate drive  
z Low drainsource ON-resistance  
z High forward transfer admittance  
: R  
= 0.18 (typ.)  
DS (ON)  
: |Y | = 6.0 S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 16 V)  
DSS  
DS  
z Enhancement mode : V = 0.5~1.1 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
16  
16  
V
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
±8  
GSS  
DC (Note 1)  
Pulse(Note 1)  
I
5  
D
JEDEC  
JEITA  
Drain current  
A
I
20  
DP  
SC-64  
Drain power dissipation (Tc = 25°C)  
Channel temperature  
P
20  
W
°C  
°C  
D
ch  
stg  
TOSHIBA  
2-7B1B  
T
150  
Weight: 0.36 g (typ.)  
Storage temperature range  
T
55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
6.25  
125  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (chc)  
th (cha)  
Thermal resistance, channel to  
ambient  
R
Note 1: Ensure that the channel temperature does not exceed 150°C.  
This transistor is an electrostatic-sensitive device. Handle with care.  
JEDEC  
JEITA  
SC-64  
TOSHIBA  
2-7J1B  
Weight: 0.36 g (typ.)  
1
2006-11-16  
2SJ439  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Gate leakage current  
I
V
V
= ±6.5 V, V = 0 V  
±10  
100  
μA  
μA  
V
GSS  
GS  
DS  
DS  
Drain cutoff current  
I
= 16 V, V  
= 0 V  
= 0 V  
DSS  
(BR) DSS  
GS  
Drainsource breakdown voltage  
Gate threshold voltage  
V
I
= 10 mA, V  
16  
0.5  
D
GS  
V
V
V
V
V
= 10 V, I = 1 mA  
1.1  
0.28  
0.2  
V
th  
DS  
GS  
GS  
DS  
D
= 2.5 V, I = 2.5 A  
0.18  
0.14  
6.0  
D
Drainsource ON-resistance  
R
DS (ON)  
= 4 V, I = 2.5 A  
D
Forward transfer admittance  
Input capacitance  
|Y |  
fs  
= 10 V, I = 2.5 A  
3.0  
S
D
C
C
1050  
120  
460  
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
C
oss  
Rise time  
t
80  
r
Turnon time  
Switching time  
t
100  
250  
on  
ns  
Fall time  
t
f
Turnoff time  
t
550  
24  
off  
Total gate charge  
Q
g
(Gatesource plus gatedrain)  
V
≈ −16 V, V  
= 5 V, I = 5 A  
nC  
DD  
GS  
D
Gatesource charge  
Q
16  
8
gs  
Gatedrain (“Miller”) charge  
Q
gd  
SourceDrain Ratings and Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
5  
Unit  
A
Continuous drain reverse current  
(Note 1)  
I
DR  
Pulse drain reverse current  
(Note 1)  
I
20  
A
DRP  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 5 A, V  
= 5 A, V  
= 0 V  
1.7  
V
DSF  
DR  
DR  
GS  
GS  
t
120  
0.12  
ns  
μC  
rr  
= 0 V,dl  
/ dt = 50 A / μs  
DR  
Qrr  
Marking  
J439  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2006-11-16  
2SJ439  
3
2006-11-16  
2SJ439  
4
2006-11-16  
2SJ439  
5
2006-11-16  
2SJ439  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2006-11-16  

相关型号:

2SJ439_10

DC/DC Converter, Relay Drive and Motor Drive Applications
TOSHIBA
SAMTEC

2SJ440

TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE
TOSHIBA

2SJ440-Y

P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)
TOSHIBA

2SJ440Y

TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 9A I(D) | TO-247VAR
ETC

2SJ440_07

Audio Frequency Power Amplifier Application
TOSHIBA

2SJ443

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220FN
ETC

2SJ448

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC

2SJ449

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC

2SJ449-AZ

Power Field-Effect Transistor, 6A I(D), 250V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MP-45F, ISOLATED TO-220, 3 PIN
NEC

2SJ450

Silicon P-Channel MOS FET
HITACHI

2SJ450UY

Power Field-Effect Transistor, 1A I(D), 60V, 1.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
HITACHI