2SC5738 [TOSHIBA]
High-Speed Switching Applications DC-DC Converter Applications; 高速开关应用DC - DC转换器应用
| 型号： | 2SC5738 |
| 厂家： | 
TOSHIBA |
| 描述： | High-Speed Switching Applications DC-DC Converter Applications |
| 文件： | 总6页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5738
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5738
High-Speed Switching Applications
DC-DC Converter Applications
Industrial Applications
Unit: mm
·
·
·
High DC current gain: h
= 400 to 1000 (I = 0.5 A)
C
FE
Low collector-emitter saturation voltage: V
= 0.15 V (max)
CE (sat)
High-speed switching: t = 90 ns (typ.)
f
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
V
40
30
V
V
V
V
CBO
V
CEX
CEO
EBO
V
V
20
7
DC
Collector current
Pulse
I
3.5
C
A
I
6.0
CP
JEDEC
JEITA
―
―
Base current
I
350
mA
mW
B
DC
P
625
C
Collector power
dissipation
(Note)
TOSHIBA
2-3S1A
t = 10 s
1000
150
Junction temperature
T
°C
°C
j
Weight: 0.01 g (typ.)
Storage temperature range
T
-55 to 150
stg
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Symbol
Test Condition
= 40 V, I = 0
Min
Typ.
Max
Unit
I
V
V
¾
¾
¾
¾
100
100
¾
nA
nA
V
CBO
CB
EB
E
Emitter cut-off current
I
= 7 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I
= 10 mA, I = 0
20
400
200
¾
¾
C
B
h
h
(1)
(2)
V
V
= 2 V, I = 0.5 A
¾
1000
¾
FE
CE
CE
C
DC current gain
= 2 V, I = 1.6 A
¾
FE
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
V
I
I
= 1.6 A, I = 32 mA
¾
0.15
1.10
¾
V
V
CE (sat)
BE (sat)
C
C
B
V
= 1.6 A, I = 32 mA
¾
¾
B
C
V
= 10 V, I = 0, f = 1 MHz
¾
18
100
350
90
pF
ob
CB
E
t
¾
¾
See Figure 1 circuit diagram.
r
~
-
Switching time
V
I
12 V, R = 7.5 W
ns
Storage time
Fall time
t
¾
¾
CC
L
stg
= -I = 53 mA
t
f
¾
¾
B1
B2
1
2001-12-17
2SC5738
Marking
V
CC
20 ms
I
I
I
B1
B1
B2
Output
W D
Input
B2
I
Duty cycle < 1%
Figure 1 Switching Time Test Circuit &
Timing Chart
2
2001-12-17
2SC5738
I
– V
h
– I
C
CE
FE C
6
5
4
3
2
1
0
1000
Common emitter
Ta = 100°C
Ta = 25°C
Single nonrepetitive pulse
60
50
40
25
-55
30
20
100
10
5
Common emitter
V
CE
= 2 V
I
= 2 mA
Single nonrepetitive
pulse
B
10
0
0.1
0.2
0.3
0.4
(V)
0.5
0.001
0.01
0.1
1
10
Collector-emitter voltage
V
Collector current
I
C
(A)
CE
V
– I
V
– I
CE (sat)
C
BE (sat)
C
1
0.1
10
Common emitter
C B
Common emitter
C B
I
/I = 50
I
/I = 50
Single nonrepetitive pulse
Single nonrepetitive pulse
Ta = 100°C
-55°C
-55
1
25°C
0.01
0.001
25
Ta = 100°C
0.1
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Collector current
I
C
(A)
Collector current
I
C
(A)
I
– V
C
BE
6
5
4
3
2
1
0
Common emitter
= 2 V
V
CE
Single nonrepetitive pulse
Ta = 100°C 25 -55
0
0.2
0.4
0.6
0.8
1
1.2
Base-emitter voltage
V
(V)
BE
3
2001-12-17
2SC5738
Transient Thermal Resistance
r – t
th w
1000
100
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Safe Operating Area
10
1
I
max (pulsed) ¨
C
10 ms¨
I
max (continuous)
C
100 ms¨
1 ms¨
10 ms¨
100 ms¨*
10 s¨*
DC operation *
(Ta = 25°C)
¨: Single nonrepetitive pulse
Ta = 25°C
0.1
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2). These characteristic
curves must be derated linearly with
increase in temperature.
0.01
0.1
1
10
100
Collector-emitter voltage
V
(V)
CE
4
2001-12-17
2SC5738
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5
2001-12-17
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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