2SC4118_07 [TOSHIBA]

Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications; NPN硅外延式(PCT处理)音频频率低功耗运算放大器应用
2SC4118_07
型号: 2SC4118_07
厂家: TOSHIBA    TOSHIBA
描述:

Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
NPN硅外延式(PCT处理)音频频率低功耗运算放大器应用

运算放大器 PC
文件: 总4页 (文件大小:329K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC4118  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC4118  
Audio Frequency Low Power Amplifier Applications  
Unit: mm  
Driver Stage Amplifier Applications  
Switching Applications  
Excellent h  
linearity: h  
= 25 (min) (V = 6 V, I = 400 mA)  
CE C  
FE  
FE (2)  
Complementary to 2SA1588  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
35  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
500  
50  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
125  
55~125  
C
T
j
JEDEC  
JEITA  
T
stg  
SC-70  
2-2E1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
Weight: 0.006 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
1
2007-11-01  
2SC4118  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 35 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
70  
25  
0.1  
0.1  
400  
μA  
μA  
CBO  
CB  
EB  
E
I
= 5 V, I = 0  
C
EBO  
h
h
(Note) V = 1 V, I = 100 mA  
CE  
FE (1)  
FE (2)  
C
DC current gain  
(Note) V = 6 V, I = 400 mA  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= 100 mA, I = 10 mA  
0.1  
0.8  
300  
7
0.25  
1.0  
V
V
CE (sat)  
C
B
V
V
V
V
= 1 V, I = 100 mA  
C
BE  
CE  
CE  
CB  
Transition frequency  
f
= 6 V, I = 20 mA  
MHz  
pF  
T
C
Collector output capacitance  
C
= 6 V, I = 0, f = 1 MHz  
ob  
E
Note: h  
h
classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400  
classification O: 25 (min), Y: 40 (min), GR: 70 (min)  
(
) Marking Symbol  
FE (1)  
FE (2)  
2
2007-11-01  
2SC4118  
3
2007-11-01  
2SC4118  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
4
2007-11-01  

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