2SC2983-O [TOSHIBA]

TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal;
2SC2983-O
型号: 2SC2983-O
厂家: TOSHIBA    TOSHIBA
描述:

TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

晶体 放大器 小信号双极晶体管 驱动
文件: 总4页 (文件大小:151K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC2983  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC2983  
Power Amplifier Applications  
Unit: mm  
Driver Stage Amplifier Applications  
High transition frequency: f = 100 MHz (typ.)  
T
Complementary to 2SA1225  
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
160  
160  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
I
1.5  
C
Base current  
I
B
0.3  
Ta = 25°C  
Tc = 25°C  
1.0  
Collector power  
dissipation  
P
W
C
15  
Junction temperature  
T
150  
°C  
°C  
j
JEDEC  
JEITA  
Storage temperature range  
T
stg  
55 to 150  
TOSHIBA  
2-7B1A  
Weight: 0.36 g (typ.)  
JEDEC  
JEITA  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
1
2005-02-01  
2SC2983  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 160 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
I
V
V
1.0  
1.0  
µA  
µA  
V
CBO  
CB  
E
Emitter cut-off current  
= 5 V, I = 0  
C
EBO  
EB  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
V
V
I
= 10 A, I = 0  
160  
5
(BR) CEO  
(BR) EBO  
C
E
B
I
= 1 mA, I = 0  
V
C
h
FE  
DC current gain  
V
CE  
= 5 V, I = 100 mA  
70  
240  
C
(Note)  
Collector emitter saturation voltage  
Base-emitter voltage  
V
I
= 500 mA, I = 50 mA  
1.5  
1.0  
V
V
CE (sat)  
C
B
V
BE  
V
V
V
= 5 V, I = 500 mA  
C
CE  
CE  
CB  
Transition frequency  
f
= 10 V, I = 100 mA  
100  
25  
MHz  
pF  
T
C
Collector output capacitance  
C
ob  
= 10 V, I = 0, f = 1 MHz  
E
Note: h classification O: 70 to 140, Y: 120 to 240  
FE  
Marking  
C2983  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Characteristics  
indicator  
2
2005-02-01  
2SC2983  
I
– V  
h – I  
FE C  
C
CE  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
500  
300  
Common emitter  
= 5 V  
Common emitter  
Tc = 25°C  
V
CE  
20  
12  
Tc = 100°C  
25  
8
6
100  
25  
50  
30  
4
10  
0.003  
I
B
= 2 mA  
0.01  
0.03  
0.1  
0.3  
(A)  
1
Collector current  
I
C
0
0
2
4
6
8
10  
12  
(V)  
14  
Collector-emitter voltage  
V
CE  
V
– I  
C
f – I  
T C  
CE (sat)  
1
300  
100  
Common emitter  
/I = 10  
Common emitter  
V = 10 V  
CE  
I
0.5  
0.3  
C
B
Tc = 25°C  
Tc = 100°C  
25  
50  
30  
25  
0.1  
0.05  
0.02  
0.003  
10  
5  
0.01  
0.03  
0.1  
0.3  
1
10  
30  
100  
300  
(mA)  
1000  
Collector current  
I
C
(mA)  
Collector current  
I
C
Safe Operating Area  
5
3
I
max (pulsed)*  
C
1 ms*  
I
C
max  
P
C
Ta  
10 ms  
(continuous)  
24  
20  
16  
12  
8
(1) Tc = Ta infinite heat sink  
(2) Ceramic substrate  
50 × 50 × 0.8 mm  
1
0.5  
0.3  
DC operation  
Tc = 25°C  
(3) No heat sink  
(1)  
0.1  
0.05  
0.03  
*: Single nonrepetitive pulse  
Tc = 25°C  
4
(2)  
(3)  
Curves must be derated linearly  
with increase in temperature.  
V
max  
CEO  
100  
(V)  
0
0
0.01  
20  
40  
60  
80  
100  
120  
140  
160  
1
3
10  
30  
300  
Ambient temperature Ta (°C)  
Collector-emitter voltage  
V
CE  
3
2005-02-01  
2SC2983  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
4
2005-02-01  

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