2SA2066 [TOSHIBA]
High-Speed Switching, DC-DC Converter Applications; 高速开关， DC- DC转换器应用
| 型号： | 2SA2066 |
| 厂家： | 
TOSHIBA |
| 描述： | High-Speed Switching, DC-DC Converter Applications |
| 文件： | 总5页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SA2066
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2066
High-Speed Switching Applications
Unit: mm
DC-DC Converter Applications
•
•
•
High DC current gain: h
= 200 to 500 (I = −0.2 A)
C
FE
Low collector-emitter saturation voltage: V
= −0.19 V (max)
CE (sat)
High-speed switching: t = 25 ns (typ.)
f
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
−20
−10
V
V
V
Collector-emitter voltage
Emitter-base voltage
−7
DC
I
−2.0
−3.5
−200
2.0
C
Collector current
Base current
A
mA
W
Pulse
I
CP
I
B
t = 10 s
DC
P
C
Collector power
dissipation
JEDEC
JEITA
―
(Note 1)
1.0
SC-62
2-5K1A
Junction temperature
T
150
°C
°C
j
TOSHIBA
Storage temperature range
T
stg
−55 to 150
Weight: 0.05 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
2
645 mm )
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Symbol
Test Condition
= −20 V, I = 0
Min
Typ.
Max
Unit
I
I
V
V
―
―
―
―
−0.1
−0.1
―
µA
µA
V
CBO
CB
EB
E
Emitter cut-off current
= −7 V, I = 0
C
EBO
Collector-emitter breakdown voltage
V
I
= −10 mA, I = 0
−10
200
125
―
―
(BR) CEO
C
B
h
FE
h
FE
(1)
(2)
V
V
= −2 V, I = −0.2 A
―
500
―
CE
CE
C
DC current gain
= −2 V, I = −0.6 A
―
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
V
I
I
= −0.6 A, I = −0.02 A
―
−0.19
−1.1
―
V
V
CE (sat)
BE (sat)
C
C
B
V
= −0.6 A, I = −0.02 A
―
―
B
t
r
―
50
115
25
See Figure 1.
≈ −6 V, R = 10 Ω
Switching time
V
ns
Storage time
Fall time
t
―
―
CC
L
stg
−I = I = −20 mA
t
f
―
―
B1
B2
1
2004-07-07
2SA2066
Marking
V
CC
Part No. (or abbreviation code)
20 µs
I
B2
I
I
B1
B2
Output
4 E
Input
I
B1
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot No.
Duty cycle < 1%
Figure 1 Switching Time Test Circuit &
Timing Chart
2
2004-07-07
2SA2066
I
– V
h – I
FE C
C
CE
−2
−1.6
−1.2
−0.8
−0.4
0
10000
1000
100
Common emitter
= −2 V
Single nonrepetitive pulse
−80
−60
−40
V
CE
−20
Ta = 100°C
−10
−6
25
−55
−4
I
= −2 mA
B
Common emitter
Ta = 25°C
Single nonrepetitive
pulse
10
−0.001
−0.01
−0.1
−1
(A)
−10
Collector current
I
C
0
−0.2
−0.4
−0.6
−0.8
−1
−1.2
Collector-emitter voltage
V
(V)
CE
V
– I
C
V
– I
CE (sat)
BE (sat) C
−1
−0.1
−10
Common emitter
/I = 30
Single nonrepetitive
pulse
Common emitter
/I = 30
Single nonrepetitive pulse
I
C
B
I
C
B
−55
Ta = 100°C
25
−1
−55
25
−0.01
−0.001
Ta = 100°C
−0.1
−0.001
−0.001
−0.01
−0.1
−1
(A)
−10
−0.01
−0.1
−1
(A)
−10
Collector current
I
C
Collector current
I
C
I
– V
BE
C
−2
Common emitter
V
CE
= −2 V
Single nonrepetitive pulse
−1.6
−1.2
−0.8
25
Ta = 100°C
−0.4
−55
−0.4
0
0
−0.8
−1.2
(V)
−1.6
Base-emitter voltage
V
BE
3
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2SA2066
r
– t
w
th
1000
100
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
w
(s)
Safe Operating Area
−10
I
C
max (pulsed) ♦ 10 ms♦ 1 ms♦ 100 µs♦
I
C
max (continuous)
100 ms♦*
10 s♦*
−1
DC operation *
(Ta = 25°C)
♦: Single nonrepetitive pulse
Ta = 25°C
−0.1
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2). These characteristic
curves must be derated linearly
with increase in temperature.
−0.01
−0.1
−1
−10
−100
Collector-emitter voltage
V
(V)
CE
4
2004-07-07
2SA2066
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
5
2004-07-07
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