2SA2060 [TOSHIBA]

High-Speed Switching, DC-DC Converter, Strobe Applications; 高速开关, DC-DC转换器,应用选通
2SA2060
型号: 2SA2060
厂家: TOSHIBA    TOSHIBA
描述:

High-Speed Switching, DC-DC Converter, Strobe Applications
高速开关, DC-DC转换器,应用选通

晶体 转换器 开关 小信号双极晶体管 DC-DC转换器
文件: 总5页 (文件大小:149K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SA2060  
TOSHIBA Transistor Silicon PNP Epitaxial Type  
2SA2060  
High-Speed Switching Applications  
Unit: mm  
DC-DC Converter Applications  
Strobe Applications  
High DC current gain: h  
= 200 to 500 (I = 0.5 A)  
C
FE  
Low collector-emitter saturation voltage: V  
= 0.2 V (max)  
CE (sat)  
High-speed switching: t = 90 ns (typ.)  
f
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
7  
DC  
I
2.0  
3.5  
200  
2.5  
C
Collector current  
Base current  
A
mA  
W
Pulse  
I
CP  
I
B
JEDEC  
JEITA  
t = 10 s  
DC  
P
C
Collector power  
dissipation  
SC-62  
2-5K1A  
(Note 1)  
1.0  
TOSHIBA  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 0.05 g (typ.)  
Storage temperature range  
T
stg  
55 to 150  
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:  
2
645 mm )  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Collector cut-off current  
Symbol  
Test Condition  
= 50 V, I = 0  
Min  
Typ.  
Max  
Unit  
I
I
V
V
100  
100  
nA  
nA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
= 7 V, I = 0  
C
EBO  
Collector-emitter breakdown voltage  
V
I
= 10 mA, I = 0  
50  
200  
100  
(BR) CEO  
C
B
h
FE  
h
FE  
(1)  
(2)  
V
V
= 2 V, I = 0.3 A  
500  
CE  
CE  
C
DC current gain  
= 2 V, I = 1.0 A  
C
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector output capacitance  
Rise time  
V
I
I
= 1.0 A, I = 0.033 A  
0.2  
1.1  
V
V
CE (sat)  
BE (sat)  
C
C
B
V
= 1.0 A, I = 0.033 A  
B
C
ob  
V
= 10 V, I = 0, f = 1 MHz  
20  
60  
250  
90  
pF  
CB  
E
t
See Figure 1 circuit diagram.  
≈ −30 V, R = 30 Ω  
r
Switching time  
V
ns  
Storage time  
Fall time  
t
CC  
L
stg  
I = I = 33 mA  
t
f
B1  
B2  
1
2004-07-07  
2SA2060  
Marking  
V
CC  
Part No. (or abbreviation code)  
20 µs  
I
B2  
I
I
B1  
B2  
Output  
4 G  
Input  
I
B1  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Lot No.  
Duty cycle < 1%  
Figure 1 Switching Time Test Circuit &  
Timing Chart  
2
2004-07-07  
2SA2060  
I
– V  
h – I  
FE C  
C
CE  
3  
2.4  
1.8  
1.2  
0.6  
0
10000  
1000  
100  
10  
80  
40  
100  
60  
30  
20  
Ta = 100°C  
10  
6  
25  
55  
4  
I
= −2 mA  
B
Common emitter  
Ta = 25°C  
Single nonrepetitive  
pulse  
Common emitter  
V
= −2 V  
CE  
Single  
nonrepetitive  
pulse  
0
0.4  
0.8  
1.2  
1.6  
2  
2.4  
1
Collector-emitter voltage  
V
(V)  
0.001  
0.01  
0.1  
1  
10  
CE  
Collector current  
I
(A)  
C
V
– I  
C
V
– I  
CE (sat)  
BE (sat) C  
1  
0.1  
10  
Common emitter  
/I = 30  
Single nonrepetitive pulse  
Common emitter  
I
C
I
C
/I = 30  
B
B
Single nonrepetitive  
pulse  
55 25  
Ta = 100°C  
1  
55  
25  
0.01  
0.001  
Ta = 100°C  
0.1  
0.001  
0.01  
0.1  
1  
10  
0.001  
0.01  
0.1  
1  
(A)  
10  
Collector current  
I
C
Collector current  
I
(A)  
C
I
– V  
BE  
C
3  
2.4  
1.8  
1.2  
0.6  
0
Common emitter  
= −2 V  
V
CE  
Single nonrepetitive pulse  
Ta = 100°C  
25  
55  
0
0.2  
0.4  
0.6  
0.8  
1  
(V)  
1.2  
Base-emitter voltage  
V
BE  
3
2004-07-07  
2SA2060  
r
– t  
w
th  
1000  
100  
10  
Curves should be applied in thermal limited area.  
Single nonrepetitive pulse Ta = 25°C  
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu  
area: 645 mm2)  
1
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse width  
t
w
(s)  
Safe Operating Area  
10  
I
C
max (pulsed) ♦  
10 ms♦  
10 µs♦  
1 ms100 µs♦  
I
C
max (continuous)10 s*  
1  
100 ms*  
DC operation *  
(Ta = 25°C)  
: Single nonrepetitive pulse  
Ta = 25°C  
0.1  
Note that the curves for 100 ms*,  
10 s* and DC operation* will be  
different when the devices aren’t  
mounted on an FR4 board (glass  
epoxy, 1.6 mm thick, Cu area:  
645 mm2). These characteristic  
curves must be derated linearly  
with increase in temperature.  
0.01  
0.1  
0.5 1  
5 10  
50 100  
Collector-emitter voltage  
V
(V)  
CE  
4
2004-07-07  
2SA2060  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
5
2004-07-07  

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